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    G2 MARKING DIODE Search Results

    G2 MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UC1611J
    		Texas Instruments Quad Schottky Diode Array 8-CDIP -55 to 125 Visit Texas Instruments
    5962-90538012A
    		Texas Instruments Quad Schottky Diode Array 20-LCCC -55 to 125 Visit Texas Instruments Buy
    TPD4E05U06DQAR
    		Texas Instruments 4-Channel Ultra-Low-Capacitance IEC ESD Protection Diode 10-USON -40 to 125 Visit Texas Instruments Buy
    5962-9053801PA
    		Texas Instruments Quad Schottky Diode Array 8-CDIP -55 to 125 Visit Texas Instruments Buy
    UC3610DW
    		Texas Instruments Dual Schottky Diode Bridge 16-SOIC 0 to 70 Visit Texas Instruments Buy

    G2 MARKING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si5975DC

    Abstract: Si5975DC-T1
    Contextual Info: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5975DC Si5975DC-T1 S-21251--Rev. 05-Aug-02 PDF

    Contextual Info: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5975DC Si5975DC-T1 08-Apr-05 PDF

    Si5905DC

    Abstract: Si5905DC-T1 MARKING CODE DB
    Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5905DC Si5905DC-T1 S-21251--Rev. 05-Aug-02 MARKING CODE DB PDF

    Si5904DC

    Contextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability


    Original     		Si5904DC S-61855--Rev. 04-Oct-99 PDF

    Mosfet

    Abstract: SSF2112H2
    Contextual Info: SSF2112H2 20V Dual N-Channel MOSFET 20V D1 S1 RDS on S1 10mohm(typ.) G1 D1 D2 5 6 7 8 VDSS 4 3 2 1 Main Product Characteristics 2112H2 8205A D2 S2 S2 G1 G2 G2 S2 S1 ID 8A Marking and Pin TSSOP-8 Schematic Diagram Assignment Features and Benefits   


    Original     		SSF2112H2 10mohm 2112H2 3000pcs 6000pcs 48000pcs Mosfet SSF2112H2 PDF

    ChipFET

    Abstract: Si5933DC Si5933DC-T1
    Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5933DC Si5933DC-T1 S-21251--Rev. 05-Aug-02 ChipFET PDF

    Si5903DC

    Abstract: Si5903DC-T1
    Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5903DC Si5903DC-T1 18-Jul-08 PDF

    71054

    Abstract: Si5903DC Si5903DC-T1
    Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5903DC Si5903DC-T1 S-21251--Rev. 05-Aug-02 71054 PDF

    Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5905DC Si5905DC-T1 08-Apr-05 PDF

    Si5975DC

    Abstract: Si5975DC-T1
    Contextual Info: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5975DC Si5975DC-T1 18-Jul-08 PDF

    Si5903DC

    Abstract: Si5903DC-T1
    Contextual Info: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5903DC Si5903DC-T1 08-Apr-05 PDF

    Si5905DC

    Abstract: Si5905DC-T1
    Contextual Info: Si5905DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.090 @ VGS = -4.5 V 4.1 -8 0.130 @ VGS = -2.5 V 3.4 0.180 @ VGS = -1.8 V 2.9 S1 S2 1206-8 ChipFETt t 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original     		Si5905DC Si5905DC-T1 18-Jul-08 PDF

    Vishay DaTE CODE 1206-8

    Contextual Info: Si5904DC New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability


    Original     		Si5904DC S-61855--Rev. 04-Oct-99 Vishay DaTE CODE 1206-8 PDF

    Si5902DC

    Abstract: Si5902DC-T1
    Contextual Info: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		Si5902DC Si5902DC-T1 18-Jul-08 PDF

    vishay MOSFET code marking

    Contextual Info: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		Si5902DC Si5902DC-T1 08-Apr-05 vishay MOSFET code marking PDF

    ChipFET

    Abstract: Si5904DC Si5904DC-T1
    Contextual Info: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code


    Original     		Si5904DC Si5904DC-T1 S-21251--Rev. 05-Aug-02 ChipFET PDF

    Contextual Info: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		Si5902DC S-62424--Rev. 04-Oct-99 PDF

    Si5902DC

    Contextual Info: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code


    Original     		Si5902DC S-62424--Rev. 04-Oct-99 PDF

    Contextual Info: NCP81174 Product Preview 4/3/2-Phase Synchronous Buck Controller with Power Saving Mode and PWM VID Interface PACKAGE AND MARKING INFORMATION 32 PIN QFN 5.0 x 5.0mm G3 G2 G1 30 DRVON 31 G4 VREF 32 VCC PINOUT REFIN The NCP81174 is a general-purpose four-phase


    Original     		NCP81174 NCP81174 PDF

    Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 S1 S2 1206-8 ChipFETr 1 S1 D1 G1 G1 D1 G2 S2 D2 Marking Code


    Original     		Si5933DC Si5933DC-T1 Si5933DC-T1--E3 S-40932--Rev. 17-May-04 PDF

    Mosfet

    Abstract: SSF2129H3
    Contextual Info: SSF2129H3 20V Dual P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 21mΩ (typ.) ID -6.0A D1 S1 Features and Benefits     G2 G1 SOP-8   D2 Marking and Pin S2 Schematic Diagram Assignment Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2129H3 Mosfet SSF2129H3 PDF

    G4EU

    Abstract: E72873 MIXA20W1200TMH
    Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV


    Original     		MIXA20W1200TMH 20091127a G4EU E72873 MIXA20W1200TMH PDF

    Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code


    Original     		Si5980DU 2002/95/EC Si5980DUllectual 18-Jul-08 PDF

    Si1900DL

    Contextual Info: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability


    Original     		Si1900DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 PDF