G1D301S Search Results
G1D301S Datasheets Context Search
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA30N06E Fully Isolated TMOS E-FET™ High Energy Power MOSFET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.025 OHM MAX This advanced TMOS E-FET is designed to withstand high |
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MTA30N06E 3b725M G1D301S |