G100G Search Results

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Contextual Info: G100GN Nch 40V 10A Power MOSFET Datasheet l Outline VDSS 40V RDS on (Max.) 14.3mΩ ID ±10A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

winbond WPCE773

Abstract: rt8202a WPCE773 SC4D7U6D3V3KX-gp N10M-GE1 SE100U25VM-L1-GP al232 Function Generator IC 400mhz g547f2 SCD047U16V2KX-1-GP
Contextual Info: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CG01.001 PCB P/N : 48.4CG01.0SA REVISION : 08245-SA JV50 Block Diagram 42 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 SMSC Mobile CPU CLK GEN. D SYSTEM DC/DC EMC2102 Penryn ICS9LPRS365B

inp hemt power amplifier

Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Contextual Info: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

WPCE773

Abstract: WPCE773LA0DG winbond WPCE773 wistron jv50 WISTRON power sequence N10M-GE ICS9LPRS365BKLFT N10M-GE1 rt8202a b30 c250 f 1208
Contextual Info: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CG01.001 PCB P/N : 48.4CG01.0SA REVISION : 08245-SA JV50 Block Diagram 42 ISL62392 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 SMSC Mobile CPU CLK GEN. D SYSTEM DC/DC EMC2102 Penryn ICS9LPRS365B

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment