sot54
Abstract: DO35 SC-40 triacs
Text: Philips Semiconductors Thyristors and Triacs Mechanical Data Hermetically sealed glass package; axial leaded; 2 leads SOD27 1 b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 1 2 mm scale Note
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DO-35
SC-40
OT428
OT428
sot54
DO35
SC-40
triacs
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philips
Abstract: marking G1
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; ImplotecTM 1 technology; axial leaded; 2 leads SOD91 G1 (2) b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.55 D max. 1.7 G max. G1 max. 3.0
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SOD81
Abstract: IMPLOTEC marking G1 philips philips led datasheet
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; ImplotecTM 1 technology; axial leaded; 2 leads SOD81 G1 (2) k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. G1 max. L min. mm 0.81
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Untitled
Abstract: No abstract text available
Text: Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD27 1 b D G1 L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 L 1 2 mm scale Note 1. The marking band indicates the cathode.
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DO-35
SC-40
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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Untitled
Abstract: No abstract text available
Text: Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD66 1 k a b D G1 L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.81 2.6 4.8 28 L 2 4 mm scale Note 1. The marking band indicates the cathode.
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DO-41
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SOD-27
Abstract: sod27 marking A24 SC-40 DO-35 PACKAGE G1.L marking G1 max 1999 circuit
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD27 1 b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 1 2 mm scale Note 1. The marking band indicates the cathode.
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DO-35
SC-40
SOD-27
sod27
marking A24
SC-40
DO-35 PACKAGE
G1.L
marking G1
max 1999 circuit
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G1.L
Abstract: SOD120 marking G1 g1-L G1 Package Package marking 25
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD120 1 b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b D max. G1 max. L min. mm 0.6 2.15 3.0 28 2 4 mm scale Note 1. The marking band indicates the cathode.
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OD120
G1.L
SOD120
marking G1
g1-L
G1 Package
Package marking 25
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SOD68
Abstract: marking G1 G1.L DO-34 g1-L marking 34 SOD-68
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD68 1 b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.55 1.6 3.04 25.4 2 4 mm scale Note 1. The marking band indicates the cathode.
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DO-34
SOD68
marking G1
G1.L
DO-34
g1-L
marking 34
SOD-68
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SOD-66
Abstract: SOD66 DO-41 package marking G1 DO-41 G1.L Philips Semiconductors OR NXP Semiconductors
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD66 1 k a b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.81 2.6 4.8 28 2 4 mm scale Note 1. The marking band indicates the cathode.
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DO-41
SOD-66
SOD66
DO-41 package
marking G1
DO-41
G1.L
Philips Semiconductors OR NXP Semiconductors
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Untitled
Abstract: No abstract text available
Text: Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD68 1 b D G1 L L Dimensions: (mm are the original dimensions) Packing method Unit 52 mm tape mm max nom min 26 mm tape mm max nom min b D G1 0.55 1.6 3.04 0.55 L 3.04 15.7 Note 1. The marking band indicates the cathode.
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sod068
DO-34
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Untitled
Abstract: No abstract text available
Text: Package outline Hermetically sealed glass package; ImplotecTM 1 technology; axial leaded; 2 leads SOD81 (2) G1 k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. 2.15 G max. G1 max. 3.8 5 L min. 1 2 mm scale 28 Notes 1. Implotec is a trademark of Philips.
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Untitled
Abstract: No abstract text available
Text: Package outline Hermetically sealed glass package; ImplotecTM 1 technology; axial leaded; 2 leads (2) SOD91 G1 b D L G L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. G1 max. L min. mm 0.55 1.7 3.0 3.5 29 1 2 mm scale Note 1. Implotec is a trademark of Philips.
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marking G3
Abstract: DO204AP DO-204AP
Text: VISHAY Vishay Semiconductors Tape and Reel Standards Package Available Packaging 10´´ tape & reel 13´´ tape & reel Ammo Pack #1 Ammo Pack #2 Quantity / Reel Quantity / Reel Quantity / Box Quantity / Box SOD57 5.000 SOD64 2.500 5.000 2.500 DO204AP G1 4.500
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DO204AP
07-Jan-03
marking G3
DO-204AP
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DO204AP
Abstract: SOD-64 DO-204AP
Text: VISHAY Vishay Semiconductors Packing Information Packaging Ordering Code Suffix to Part Number Package Packaging Version - TR SOD57, SOD 64 10“ plastic Reel antistatic - TAP SOD57, SOD 64 Ammobox #1 - RAxx SOD64 bulk packaging for preformed leads /4 DO204AP G1 , G3, G4
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DO204AP
OD57-TR
260x260x75
OD64-TR
260x265x75
OD57-TAP
SOD-64
DO-204AP
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BYW56V
Abstract: BYW56 v BYW56 BY228 by228 v DO-204AP VISHAY MARKING vishay rectifiers marking G3 marking G4
Text: VISHAY Vishay Semiconductors Marking on Rectifiers V BYW56 V BY228 17208 17207 SOD57 SOD64 Figure 1. V Figure 3. V RG1A 17217 DO-204AP G1 Figure 2. Document Number 84085 Rev. 7, 07-Jan-03 RG3A 17218 G3 Figure 4. www.vishay.com 1 VISHAY Vishay Semiconductors
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BYW56
BY228
DO-204AP
07-Jan-03
BYW56V
BYW56 v
BYW56
BY228
by228 v
VISHAY MARKING
vishay rectifiers
marking G3
marking G4
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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ST1642
Abstract: No abstract text available
Text: ST1642O04 G1-60 G 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: t RAC i tCAC ^RC 60ns 104ns 15ns The Simple Technology STI642004G1-60G is a 2M x 64 bits Dynamic RAM high density memory module. The Simple
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OCR Scan
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ST1642O
G1-60
144-PIN
104ns
STI642004G1-60G
28-pin
400-mil
ST1642
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EIA-541
Abstract: IRF7101 MS-012AA
Text: PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3
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IRF7101PbF
EIA-481
EIA-541.
EIA-541
IRF7101
MS-012AA
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NEOSId 2.2k
Abstract: NEOSID 22k
Text: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C200-G1 date: 11.12.97 #P7: Test values and units changed #P8: Test values and units changed #P11: Test values changed, wrong values in previous version
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OCR Scan
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V66047-S1603-C200-G1
V66047-S1603-C200-G2
fl23SbD5
NEOSId 2.2k
NEOSID 22k
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IRF7101
Abstract: MS-012AA
Text: PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V
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IRF7101
IRF7101
MS-012AA
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IRF7101
Abstract: MS-012AA GD 1 H-010
Text: PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V
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IRF7101
IRF7101
MS-012AA
GD 1 H-010
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