G03G Search Results

IC SO5

Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
Contextual Info: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS

dual digit 7 segment display 9 pin configuration

Abstract: 7 SEGMENT DISPLAY COMMON anode pin configuration
Contextual Info: HDSP-G01x, HDSP-G03x 10.16 mm 0.4 inch Dual Digit General Purpose Seven-Segment Display Data Sheet Description Features This 10.16 mm (0.4 inch) LED dual digit seven-segment display uses industry standard size package and pinout. The device is available in either common anode or

Contextual Info: KS6034C CMOS ELECTRONICS INTRODUCTION KS6034C is a single chip CMOS LSI for data bank with clock, calculator and phone number memory functions. FUNCTION - 3 operating modes available : telephone mode, calculator mode, clock mode 1 Telephone mode • Stores up to 20 items (1 item : 7 characters for

1-583715-1

Abstract: 4-583679-8 3.96 Card Edge Connectors 5-583715-7
Contextual Info: _ — | . B A-U Card Edge Connectors Board-to-Board, Wire-to-Board) Catalog 82619 Revised 8-96 - y ' / " /-3 Twin Leaf Mother Board Connectors Product Facts • W ide variety of sizes avail­ able from 3 dual positions and up— no initial tooling investment required for new

Contextual Info: m i c ro e I e c t ro n i c s g r o u p Data Sheet February 1998 Lucent Technologies Bell Labs Innovations T7237 ISDN U-lnterface Transceiver Features Description • U-interface for ISDN basic rate 2B+D systems — Serial microprocessor and time-division multi­

Contextual Info: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

am28F020

Abstract: 28F020
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

dual digit 7 segment display 9 pin configuration

Abstract: HDSP-G01A HDSP-G01E HDSP-G01G HDSP-G01Y HDSP-G03A HDSP-G03E HDSP-G03G HDSP-G03Y 4 digit 7 segment display agilent
Contextual Info: Agilent HDSP-G01x/G03x 10.16 mm 0.4 inch Dual Digit General Purpose Seven-Segment Display Data Sheet Features • Industry standard size • Industry standard pinout 10.16 mm (0.4 inch) DIP lead on 2.54 mm • Choice of colors High Efficiency Red (HER), Green,

g01g

Abstract: dual digit 7 segment display 9 pin configuration
Contextual Info: Agilent HDSP-G01x/G03x 10.16 mm 0.4 inch Dual Digit General Purpose Seven-Segment Display Data Sheet Features • Industry standard size • Industry standard pinout 10.16 mm (0.4 inch) DIP lead on 2.54 mm • Choice of colors High Efficiency Red (HER), Green,

Contextual Info: TOSHIBA TC74VH CTOO F/FN/FS TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT00F, TC74VHCT00FN, TC74VHCT00FS QUAD 2 -INPUT NAND GATE The TC74VHCT00 is an advanced high speed CMOS 2INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to

Contextual Info: TOSHIBA TC74VHCU04F/FN/FS/FT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCU04F, TC74VHCU04FN, TC74VHCU04FS, TC74VHCU04FT HEX INVERTER The TC74VHCU04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

ZD 607

Contextual Info: Bx Notebook System Frequency Synthesizer Features PCI_F, PCI1:5 Output to Output Skew:. 500 ps • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Two copies of CPU output • Six copies of PCI output Synchronous w/CPU output

Contextual Info: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: MITSUBISHI LSIs <DRAM MODULE MH1 M36CYJ-5,-6,-7/ MH1 M36CNYJ-5,-6,-7 FAST PAGE MODE 37748736-BIT 1048576-WQRD BY 36-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H 1M 36C Y J/C N Y J is a 1048576-w ord x 36-bit dynamic RAM and consists o f 9 industry standard 1M x 4 dynamic

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH2M645CXPJ-6,-7 HYPER PAGE MODE 134217728-BIT (2097152-WORD BY 64-BIT) DYNAMIC RAM DESCRIPTION The M H 2M 645C XPJ is 2 0 9 7 1 5 2 -w o rd x 6 4 -b it dynamic R A M module. This consists o f eight industry standard 1M x 1 6 dynamic R A M s in SOJ and three industry standard

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M08CJ-5,-6,-7/ MH4M08CJA-5,-6,-7 FAST PAGE MODE 33554432-BIT (4194304-WQRD BY 8-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Single side) The MH4M08CJ/CJA is 4194304-wordx8-bit dynamic RAM and consists o f eight industry standard 4M x 1 dynamic

Contextual Info: _ — | . B A-U Card Edge Connectors Board-to-Board, W ire-to-Board ) Catalog 82619 R evised 8 -9 6 - y ' / " /- 3 Twin Leaf Mother Board Connectors Product Facts • W ide variety of sizes avail­ able from 3 dual positions and up— no initial tooling

marking code 4e

Abstract: 603G KBU601G KBU607G
Contextual Info: KBU601G - KBU607G TAIWAN SEMICONDUCTOR % Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers KBU RoHS C O M P L IA N C E •■S5H.7 ’ .395122.7;” .103 4.11 .143(3.6; L - - 1 Features UL R e c o g n iz e d F ile # E -9 6 0 0 5 4- G la s s p a s s iv a te d ju n c tio n

heds 5310

Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Contextual Info: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»

4 digit 7 segment display

Abstract: g01g 2 digit 7 segment display 2 digit 7 segment display 8 pin configuration 2 digit 7 segment display pin configuration 2 digit 7 segment led 4 digit 7 segment display pin configuration 7 SEGMENT DISPLAY COMMON CATHODE dual 7 segment common anode pin configuration HDSP-G01A
Contextual Info: Agilent HDSP-G01x/G03x 10.16 mm 0.4 inch Dual Digit General Purpose Seven-Segment Display Data Sheet Features • Industry standard size • Industry standard pinout 10.16 mm (0.4 inch) DIP lead on 2.54 mm • Choice of colors High Efficiency Red (HER), Green,

2 digit 7 segment display pin configuration

Abstract: 4 digit 7 segment display pin configuration 2 digit 7 segment display dual digit 7 segment display 18 pin 2 digit 7 segment display 8 pin configuration dual digit 7 segment display 9 pin configuration 4 digit 7 segment display 18 pin configuration 1 digit 7 segment display pin configuration dual digit 7 segment display pin configuration dual 7 segment common anode pin configuration
Contextual Info: HDSP-G01x/G03x 10.16 mm 0.4 inch Dual Digit General Purpose Seven-Segment Display Data Sheet Description This 10.16 mm (0.4 inch) LED dual digit sevensegment display uses industry standard size package and pinout. The device is available in either common

Contextual Info: K M 4 16 C 2 5 4 D J CMOS D R A M ELECTRONICS 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

BUK543

Abstract: BUK543-100A BUK543-100B
Contextual Info: N AMER PHILIPS/DISCRETE fc.'lE D b b S 3^31 0030755 ST3 * A P X Product Specification Philips Semiconductors PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode