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G02251S Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P-idB = 39-5 dBm at 5.9 GHz to 6.4 GHz |
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TIM5964-8SL MW50750196 G02251S |