G001 Search Results

Contextual Info: PERFOR MAN CE SEMICONDUCTOR EOE t 70basi7 G001S7M 1 P33PCT245A/B— P33PCT645A/B OCTAL BIDIRECTIONAL TRANSCEIVERS WITH 3-STATE OUTPUTS T —ffa-3 / FEATURES • 3.3V +0.2V Power Supply ■ CMOS for Low Power Consumption ■ Center Power and Ground Pins ■ 64 mA Sink Current A&B Outputs

UBX-G6010

Abstract: UBX-G6000-BA UBXG6010
Contextual Info: u-blox 6 single chips and chipsets GPS UBX-G6010, UBX-G6000/G0010 Product description The UBX-G6010 and UBX-G6000/UBX-G0010 are the newest generation single chip and chipset GPS receivers from u-blox that demonstrate our continuing commitment to advancing

EUPEC powerblock

Abstract: dd 76 N powerblock eupec dd 76 n 1200 powerblock DD 76 N 1200
Contextual Info: EUPEC blE D • 34032^7 G0012M3 b74 H U P E C DD 61 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t vj — Stoßspitzenspannung non repetitive peak

Schottky Diode SC-62

Abstract: SE046 diode sc-62
Contextual Info: COL L HE R S E M I C O N D U C T O R SE046 o INC 4flE D • 2 2 3 0 7 ^ 2 G00174fi 2flfl » C O L . 9 5 A _ 2 2 V ■ Outline Drawings SCHOTTKY BARRIER DIODE i 6 ma:X. 4.6 MAX. 1 ¡anh) 0.44 MAX. 0.55 MAXJ-J_ .15, . 15 I 0.48 MAX.

SC452IMLTRT

Abstract: BA59-01900A SADP-90FH BA92-04460A TM-00379-003 UL1571 AWG28 BA61-00631A BA44-00233A 7SZ08 BA59-01724A
Contextual Info: - This Document can not be used without Samsung's authorization - 5. Exploded View and Part List SYSTEM T0010 I0006 T0001 I0001 M3005 G0011 W3007 X2000 T2004 I0009 M0001 G3004 G0003 I0002 B0001 B0013 I0005 B0003 B0150 B0100 5-1 D0001 - This Document can not be used without Samsung's authorization -

L43004

Abstract: photodetector P43004 Senisys
Contextual Info: SEN«flSYS INDUSTRIAL PRODUCTS SENSO« IMIfcLaHATEO SYSTEMS FASCO I NDS/ SENISYS 40E D 34=11730 G0013fi b 5 IrH R U B E A m L o n g R a n g e fVloduiaf ed L4 3 /F 4 3 Series I SENI 28 T - Hi- 01 Super LED Thruhe&m Features: • ■ ■ ■ ■ ■ ■ ■

EN61340-5-1

Contextual Info: SCG10X SERIES 2g Doc. 82 1328 00 B Data Sheet CAPACITIVE 2G ACCELERATION ELEMENT SCG10X-G001BI Features Applications •              Murata horizontal one axis accelerometer Small size 2.55 mm x 2.95 mm x 1.91 mm Very low power consumption enabled by large

UTM fuse resistor

Abstract: Ericsson tma Diode SCR 5v nf2 -12V RELAY v80b VDR Siemens tma cm ericsson ericsson axe LSHA relay 12v 200 ohm
Contextual Info: ERICSSON COMPONENTS ERICSSON INC lb E » • 3 3 7 3 b ñ 0 G00142L, 7 ■ ^ September 1989 _ T- 75 - //- /7 PBL 3796, PBL 3796/2 Subscriber Line Interface Circuit Description Key features PBL 3796 63 V and PBL 3796/2 (48 V) are analog Subscriber Line Interface Circuits

VTB5051

Abstract: 3500/04 B5050 VTB5050
Contextual Info: SbE 3D30bCH D G00104Q VTB Process Photodiodes E G 75*1 - - 4 ISI I VCT V T B 5 0 5 0 , 5051 & G VACTEC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a “flat" window, dual lead TO-5 package.

ubx-g5010

Abstract: UBX-G5000-BT UBX-G5000 IC 7447 PIN CONNECTION DIAGRAM 7447 pin configuration ic 7447 pin configuration UBX-G0010-QT IC 7447 PIN CONFIGURATION FIGURE 32 pin 5 x 5 mlf UBLOX
Contextual Info: UBX-G5010, UBX-G5000/UBX-G0010 u-blox 5 Single Chips and Chipsets for GPS and GALILEO Preliminary Data Overview your position is our focus The UBX-G5010 and UBX-G5000/UBX-G0010 are the single chip and chipset versions of the high performance u-blox 5 positioning

A1sm

Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D 1766 RECTIFIER IV-S50 general electric
Contextual Info: 74 7294621 POWEREX INC »1^75^41,21 G001333 T "|~ Ittri MnnntoH T-ot-fÇ' 1N5179 SEE PAGE 266 »5332 SEE PAGE 209 1 Rectifier A15 SERIES TRANSIENT VOLTAGE PROTECTED 5.0 Amps 200-800 Volts 1N5624 1N5625 1N5626 1N5627 THE G EN E R A L ELECT RIC A15 IS A 5.0 AM PERE RATED, A X IA L LEAD ED

C1229

Abstract: CLED145A CLED145B CLED145C CLED145D CLT555 NGM 1600
Contextual Info: FASCO INDS/ SENISYS 4QE D 34T173Û G00131D 5 IS E N I T-H Gallium Arsenide Infrared Emitting Diodes 0.202 5.131 0,192 [4.883 rr 0.125 (3.181 DIA NQM . 0.060 C1.521 OJA S P H ER IC AL LE N S r 0.018 (0.431 1 KQH DIMENSIONS ARE IN INCHES (M IL L IM E T E R S !

Contextual Info: MOSAIC SEMICONDUCTOR INC B 3E D • bBSBBTI G001222 Ibfl ■ HOC T~- H 6 mol aie Í2 8 K X 8 Y SRAM MSM8128X-85/10/12 Issue 3.0 : October 1992 Mosaic Sem iconductor f Pin Definition NC A16 A14 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GNO 131,072 X 8 CMOS High Speed Static RAM

SCB-1000S

Abstract: NH82801HBM AD-9019S le88clpm BA92-04575A LTN154P4-L02-G venice 6.5 NH82801HB LTN154P4-L02 samsung ltn154
Contextual Info: - This Document can not be used without Samsung's authorization - 5. Exploded view and Part List SYSTEM ASSY LCD T0010 I0006 T0001 M0001 T0005 G0003 I0001 G0008 M3001 I0002 D0001 I0009 M3004 B0013 M4001 W3007 B0205 B0008 B2000 B0001 G0011 B0150 I0005 B0003

Contextual Info: EUPEC blE D • 34G3EÌ7 G001135 bl? « U P E C TT 18 F, TD 18 F, DT 18 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: ELANTEC MIE D INC E3 312^557 G001757 T El ELA Fast QuadNPN Arrau H IGH P E R FO R M A N C E A N A LO G IN TEG R ATED CIRCUITS "T:cV ?> • 2 ,S F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N PN transis­

EUPEC TT 25 N 12

Contextual Info: EUPEC blE J> m 34032^7 G00115b 341 H U P E C TT 42 F, T D 42 F, DT42 F Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspan n ung repetitive peak forw ard off-state

BPM-15/100

Abstract: BPM-15 BPM-15/200 BPM-15/60
Contextual Info: M7E D BATEL INC 2bSlSbl G0017b3 133 •]>TL mn Line Operated Dual Output Power Modules T -5 1 -0 5 FEATURES • Operated from line voltage 115 VAC ±10% , 60-440 Hz • Fully regulated ±5V, ±12V ,+ 15V CJATEL • High accuracy (±1%) • Current limiting short circuit protection

Senisys

Abstract: CLT506
Contextual Info: FASCO INDS/ SENISYS 40E 34=1=1730 D G00127G fl Ë I S E N I IGEEEEDI CLT506 [' Silicon Planar Phototransistor 0.138 C3.5H , 0.130 C3.303 1 DIMENSIONS ARE. IN INCHES CM ILUH ETER S2 c 0 .187 C4.753 0.167 C4.24] — 0 ,024 0.603 HAX. 0.021 *( 0 .5 3 } 0.017 10.433

tiristores

Abstract: tiristori 70F06DT tiristor F08DS SKT350f SKT110F06DT tiris 800 300 SKT70F06DT
Contextual Info: SEMIKRON INC DbE D | fll3bt71 G0015D2 7 | 7 ~2S-/9 Fast Thyristors Schnelle Thyristoren Thyristors rapides f : (DI 8L VT max. Or) V VT(ro) rT V m fi R :á 1 0 S :ë 1 5 T :ë 2 0 2,65 (50 A) 1,8 16 3 150 500 R :ë 1 0 S :ë 1 5 T :ë 2 0 U :ë 2 5 2,05 (50 A)

chn 825

Abstract: venice 6.2 ADP-60ZH BA61-01108A BA92-04518 chn 610 BA59-01953A venice 6.5 HAINAN2 BA46-03755A
Contextual Info: - This Document can not be used without Samsung's authorization - 6. Exploded View and Part List SYSTEM T0010 I0006 T0001 I0001 M3005 G0011 W3007 X2000 T2004 I0009 M0001 M3004 G0003 I0002 B0001 B0013 I0005 B0003 D0001 B0150 B0100 6-1 NP-R20/R21 - This Document can not be used without Samsung's authorization -

k1006

Abstract: k1008 K4003 K4002 W3006 B0206 K0201 W3007 K1003
Contextual Info: - This Document can not be used without Samsung's authorization - 5. Exploded View SYSTEM ASSY LCD I0006 I0009 T0001 T3101 I0002 M0001 T3000 K1008 M4000 I0001 M0003 M0006 W3006 M3004 M4001 G0002 M3001 B0013 B0206 D0001 W3007 B0001 G0011 G0003 R0006 I0005 B0005

Contextual Info: SCG10Z SERIES 2g Doc. 82 1329 00 B Data Sheet CAPACITIVE 2G ACCELERATION ELEMENT SCG10Z-G001CB AND SCG10Z-G001CC Features Applications •              Murata horizontal one axis accelerometer Small size 1.50 mm x 1.70 mm x 1.83 mm

Contextual Info: V T C INC TTD D I TBflûlS'i G001541 2 | 9388929 V T C IN C 99D 0 1241 V A 7 0 7 T -7 9 -0 7 -/O HIGH-SPEED, FAST-SETTLING, HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER, A q l ^ 12 CONNECTION DIAGRAMS Dual In-Llne/SOIC Package Balance [ 7 IN-[ 7 ÜNC N 7 |v +