ghg 745
Abstract: GHG 744 metallic junction diode crouse-hinds
Text: 3E Explosion Protected Terminal Boxes Series GHG 744, 745, 746, 749 UL/cUL Listed Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zones 1 & 2, AEx de IIB + H2, T6 Cl. II, Div. 1, Groups E, F, G cUL ATEX CERTIFIED IECEx CEPEL Certified Ex de IIC, T6, Zones 1 & 2
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500C
Abstract: SN74ALS746 si1161
Text: SN74ALS746 OCTAL BUFFERS AND LINE DRIVERS WITH INPUT PULL-UP RESISTORS A U G U S T 1 9 8 4 - R E V IS E D M A Y 1986 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers S N 74A L S 746 . . . D W O R N PACKAGE T O P V IE W Input Pull-Up Resistors Added for Data Bus
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SN74ALS746
300-mil
ALS746A
Ta-25-C
R2-500Q,
ALS746
500C
SN74ALS746
si1161
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N755
Abstract: 1N74I
Text: 1N 746 thru 1N 759A and 1N 4 370 thru 1N 4372A DO-7 liifiwuiAifif /Vvm imcraserm burp. M ' c u s n u f ca ll T o r me 6 02 941-6300 1% and 2% V E R S IO N S “C ” and “ D” A V A IL A B L E SILICON 400 mW ZENER DIODES FE A T U R E S • Z E N E R V O L T A G E 2.4V to 12.0V
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MIL-S-19500/127
1N746A
1N759A
0D037bl
00037bE
N755
1N74I
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CJ 4148 ZENER
Abstract: etri converter S837 XTR110 transistor PNP A105
Text: B U R R -B R O W N Ml A P P L I C A T I O N B U L L E T IN M a ilin g A d d r e s s : PO B o x 1 1 4 0 0 • T u c s o n , A Z 8 5 7 3 4 • S tr e e t A d d r e s s : 6 7 3 0 S. T u c s o n B lv d . • T u c s o n , A Z 8 5 7 0 6 Tel: 602 746-1111 • Tw x: 910 -95 2-11 1 • Telex: 066-6491 • FAX (602) 8 89 -15 10 • Im m e d ia te P ro d u ct Info: (800) 5 48 -61 32
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PTB 00 ATEX 3108
Abstract: GHG 731 PTB 99 ATEX 1044 ceag ghg atex GHG 744 CEAG ghg 731 ghg 745 CEAG PTB 99 ATEX ceag ghg
Text: Technical data Ex-e junction boxes eAZK 96 1 Marking to 94/9/EC Type of protection EC-Type Examination Certificate Enclosure material Degree of protection Rated voltage Rated current II 2 G/ II 2 D* EEx e II T6 PTB 00 ATEX 3108 Extremely tough polyamide IP 66 to EN 60529
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94/9/EC
PTB 00 ATEX 3108
GHG 731
PTB 99 ATEX 1044
ceag ghg atex
GHG 744
CEAG ghg 731
ghg 745
CEAG
PTB 99 ATEX
ceag ghg
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION JV\ÆXAJV\ All inform ation in this data sheet is p relim inary and subiect to change. V 33 , +5V/Adjust able Output, High-Po wer, Step-Down N-Channel Controller A p u ls e -w ld th m o d u la tin g P W M c u rre n t-m o d e co n tro l
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AX746
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686-MHz
Abstract: murata SAW
Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW FILTER FOR BAND13 Murata part number : SAFEA751MFM0F00 Package Dimensions
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BAND13
SAFEA751MFM0F00
756MHz)
751MHz
686-MHz
murata SAW
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30290
Abstract: No abstract text available
Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW DPX For Band13 Murata part number :SAYFH751MCA0F0A [ Tx Package Dimensions
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Band13
SAYFH751MCA0F0A
782MHz
30290
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SAYFP751MAA0F00
Abstract: MURATA SAW SAW DPX SAW DPX band13 SAYF
Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW DPX FOR UMTS Band13 Murata part number :SAYFP751MAA0F00 Package Dimensions
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Band13
SAYFP751MAA0F00
787MHz)
782MHz
SAYFP751MAA0F00
MURATA SAW
SAW DPX
SAW DPX band13
SAYF
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transistor f1 j39
Abstract: F1 J37 BLF8G20LS-260A transistor 746
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 3 — 1 May 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.
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BLF8G20LS-260A
transistor f1 j39
F1 J37
BLF8G20LS-260A
transistor 746
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J37 transistor
Abstract: No abstract text available
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.
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BLF8G20LS-260A
J37 transistor
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J293
Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its
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MWIC930
MWIC930R1
MWIC930GR1
J293
ATC600S150JW
J1805
ATC600S6R8CW
atc600s1
J053
TO272
RM73B2BT
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J673
Abstract: J612 J582 J279
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure.
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MHVIC915R2
J673
J612
J582
J279
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murata SAW
Abstract: No abstract text available
Text: Data Sheet of SAW Components Note : Murata SAW Component is applicable for Cellular /Cordless phone Terminal relevant market only. Please also read caution at the end of this document. SAW FILTER FOR Band13 Murata part number : SAFEA751MAL0F00 Package Dimensions
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Band13
SAFEA751MAL0F00
756MHz)
751MHz
murata SAW
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BLF8G20LS-260A
Abstract: ATC800B blf8g20 X3C19
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
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BLF8G20LS-260A
BLF8G20LS-260A
ATC800B
blf8g20
X3C19
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GM 950 motorola
Abstract: ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915 MHVIC915R2
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
MHVIC915R2
GM 950 motorola
ATC600S
J361
motorola gm 900
grm40
A113
ECEV1HA100SP
GRM42
MHVIC915
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J361 IC
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
J361 IC
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J595
Abstract: J673 J361
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
J595
J673
J361
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
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BLF8G20LS-260A
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GM 950 motorola
Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and
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MHVIC915R2/D
MHVIC915R2
MHVIC915R2
GM 950 motorola
A113
ECEV1HA100SP
GRM40
GRM42
MHVIC915
198MHz
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Untitled
Abstract: No abstract text available
Text: Filename: tfs 746.doc Version 1.3 VI TELEFILTER 19.07.2006 Filter specification TFS 746 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 50 50 Ω Ω Characteristics Remark: The maximum attenuation in the pass band is defined as the insertion loss ae. The nominal frequency fN is fixed at 746 MHz without any tolerance or limit.
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TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
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MWIC930/D
MWIC930R1
MWIC930GR1
MWIC930
MWIC930R1
TO272
RM73B2BT
A113
GRM42
MWIC930GR1
2XE3
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Untitled
Abstract: No abstract text available
Text: Resistor Chip Arrays Technical Data Features • • • • • • • • • Low Cost Thick Film Technology High Density Packaging Leadless Surface Mount Construction Tape and Reel Packaging Solder Coated Nickel Barrier Pads Isolated and Bussed Circuits
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742C08310R0F
741X043
742C043
742C083
745C101
745X101
741C083
742C163
743C043
743C083
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Untitled
Abstract: No abstract text available
Text: Chip Resistor Arrays Technical Data Features • • • • • • • • • Low Cost Thick Film Technology High Density Packaging Leadless Surface Mount Construction Tape and Reel Packaging Solder Coated Nickel Barrier Pads Isolated and Bussed Circuits
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742C08310R0F
741X043
742C043
742C083
745C101
745X101
741C083
742C163
743C043
743C083
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