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    G 10N60 A Search Results

    G 10N60 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    G 10N60 A Price and Stock

    Infineon Technologies AG IGP10N60T

    IGBTs LOW LOSS IGBT TECH 600V 10A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IGP10N60T 992
    • 1 $1.46
    • 10 $1.2
    • 100 $0.935
    • 1000 $0.646
    • 10000 $0.552
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    Infineon Technologies AG IGP10N60TXKSA1

    IGBTs LOW LOSS IGBT TECH 600V 10A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IGP10N60TXKSA1 518
    • 1 $1.55
    • 10 $0.909
    • 100 $0.823
    • 1000 $0.576
    • 10000 $0.551
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    Infineon Technologies AG IGB10N60T

    IGBTs Low Loss IGBT Trench Stop&Fieldstop Tech
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IGB10N60T 422
    • 1 $1.3
    • 10 $1.07
    • 100 $0.835
    • 1000 $0.576
    • 10000 $0.493
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    Infineon Technologies AG IGB10N60TATMA1

    IGBTs Low Loss IGBT Trench Stop&Fieldstop Tech
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IGB10N60TATMA1 384
    • 1 $1.3
    • 10 $1.05
    • 100 $0.778
    • 1000 $0.576
    • 10000 $0.492
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    Infineon Technologies AG G10N60A

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA G10N60A 46
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    G 10N60 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10N60G

    Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l

    10N60L

    Abstract: 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 O-220 O-220F O-220at QW-R502-119

    10N60G TO-220F

    Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l

    tf 10n60

    Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet

    10N60A

    Abstract: IGBT 10N60 10N60 10N60 e N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 10N60A 10N60 10N60 10N60A 10N60U1 IGBT 10N60 10N60 e N60A

    UTC10N60

    Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 QW-R502-119 UTC10N60 utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10N60G-TQ2-T 10N60L-TQ2-T

    10N60G TO-220F

    Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60G TO-220F MOSFET 10n60 utc 10n60l TO-220-F2 10N60G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 10N60L QW-R502-119

    10N60A

    Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60
    Text: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXSH10N60 IXSH10N60A O-247 10N60A IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD


    OCR Scan     		PDF IXSH10N60 IXSH10N60A O-247