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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FX 35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF FX35V0005

    Untitled

    Abstract: No abstract text available
    Text: bEHTBST □Dl601fi fi3D • MITSUBISHI SEMICONDUCTOR <GaAs FET> M FX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5


    OCR Scan     		PDF Dl601f GFX35V0005 FX35V