TO 609 MH
Abstract: FLX207MH-12 14GHZ GAAS
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
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FLX207MH-12
FLX207MH-12
FCSI0598M200
TO 609 MH
14GHZ GAAS
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FUJITSU XBAND
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION The FLX257XV chip is a power GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
FUJITSU XBAND
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FLX107MH-12
Abstract: FUJITSU XBAND
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
FCSI0598M200
FUJITSU XBAND
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FUJITSU XBAND
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
FCSI0598M200
FUJITSU XBAND
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FLX207MH-12
Abstract: No abstract text available
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
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FLX207MH-12
FLX207MH-12
FCSI0598M200
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FUJITSU XBAND
Abstract: No abstract text available
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
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FLX207MH-12
FLX207MH-12
FCSI0598M200
FUJITSU XBAND
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fujitsu gaas fet
Abstract: FLX257XV
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) Drain Drain Drain Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
fujitsu gaas fet
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GaAs FET HEMT Chips
Abstract: FLX257XV
Text: FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40 (Unit: µm) Drain 40 • • • • 56 DESCRIPTION Gate The FLX257XV chip is a power GaAs FET that is
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FLX257XV
FLX257XV
Symb4888
GaAs FET HEMT Chips
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FLX107MH-12
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
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FLX207MH-12
Abstract: TO 609 MH
Text: FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general
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FLX207MH-12
FLX207MH-12
TO 609 MH
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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FMM5202ML
Abstract: mmic marking 255 MMic Marking 3 fujitsu oscillator FMM5202M mmic marking A FMM5107VD FMM5202 x-band mmic FMM5107
Text: FMM5202ML -FEATURES • • • • Single Oscillator GaAs MMIC Integrated Monolithic Oscillator Single Frequency Operation Ultra-Low Phase Noise: -90dBc/Hz Typ. Small Size 6-Pin Plastic Package for SMT Applications
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FMM5202ML
-90dBc/Hz
FMM5107VD
FCSI0598M200
mmic marking 255
MMic Marking 3
fujitsu oscillator
FMM5202M
mmic marking A
FMM5202
x-band mmic
FMM5107
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Untitled
Abstract: No abstract text available
Text: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is
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FLX257XV
FLX257XV
FCSI0598M200
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FUJITSU XBAND
Abstract: FLX107MH-12 fujitsu gaas fet
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX107M H-12 is a pow er G aAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
FCSI0598M200
FUJITSU XBAND
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: F, , FLX202MH-12 X-Ku Band Power GaAs FETs rU JII ->U FEATURES • • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION The FLX202M H-12 is a pow er G aAs FET that is designed for general
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FLX202MH-12
FLX202M
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FUJITSU XBAND
Abstract: No abstract text available
Text: FLX252XV rUJIIoU GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLX252XV chip is a pow er GaAs FET that is designed for general purpose applications in the X-Band
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FLX252XV
FLX252XV
25\xm
FUJITSU XBAND
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FLX202MH-12
Abstract: No abstract text available
Text: F|.fjU. FLX202MH-12 J X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|dB = 32.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX202MH-12 is a power GaAs FET that is designed for general
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FLX202MH-12
FLX202MH-12
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FLX102MH-12
Abstract: cu2cu FUJITSU XBAND FLX102MH12
Text: n FLX102MH-12 X-Ku Band Power GaAs FETs . I 1jU FEATURES • • • • • High Output Power: P-|dB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX102MH-12 is a power GaAs FET that is designed for general
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FLX102MH-12
FLX102MH-12
cu2cu
FUJITSU XBAND
FLX102MH12
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