DS06-20112-1E
Abstract: CE77 register file 0.25-um standard cell library
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
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DS06-20112-1E
DS06-20112-1E
CE77
register file
0.25-um standard cell library
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DS06-20112-1E
Abstract: CE77
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
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DS06-20112-1E
F0204
DS06-20112-1E
CE77
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CE77
Abstract: 0.25-um CMOS standard cell library inverter 0.25-um standard cell library
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-2E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
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DS06-20112-2E
F0701
CE77
0.25-um CMOS standard cell library inverter
0.25-um standard cell library
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CE77
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20112-2Ea Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
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DS06-20112-2Ea
CE77
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2SC3844
Abstract: 2SC3847 2SC3842 2SC3843 2SC3845 2SC3846 2SC3947 2sc3948
Text: FUJITSU MICROELECTRONICS 31 E 3?m?b2 D OGlbbSñ F MI 2 r - 3 3 ~ 13 January 1990 Edition 1.1 Fujitsu PRODUCT P R O FILE : 2SC3847 Silicon High Speed Power Transistor 2SC3847 800V, 10A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Storage Temperature Range T*tg
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2SC3847
2SC3847
25fis,
2SC3842
2SC3843
2SC3844
2SC3845
2SC3846
2SC3947
2sc3948
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TGS 880
Abstract: No abstract text available
Text: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
TGS 880
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a
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1Mx64)
144-pins,
B81V1
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5011s
Abstract: 2SC3846
Text: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range
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374T7b2
2SC3846
2SC3846
D01bb37
5011s
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fujitsu transistor
Abstract: high power switching transistor npn switching transistor 400v 2SC3057
Text: FUJITSU MICROELECTRONICS BIE D Q 374*^2 DQlfciS7S *ì BIFMI < p January 1990 Edition 1.1 r ' 3 3 ' " FUJITSU PRODUCT PROFILE - 2SC3057 Silicon High Speed Power Transistor ' DESCRIPTION The 2SC3057 is a silicon NPN planar general purpose, high power switching tran
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2SC3057
2SC3057
D01bS7b
T-33-11
fujitsu transistor
high power switching transistor
npn switching transistor 400v
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2SC3842
Abstract: 2SC3843 2SC3844 2SC3845 2SC3846 2SC3847 2SC3947
Text: FUJITSU MICROELECTRONICS 31E D a 374R7b5 G01bb2b b SFMI T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2SC3844 450V, 15A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Tem perature Range Junctio n Tem perature
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374R7b5
2SC3844
2SC3844
2SC3842
2SC3843
2SC3845
2SC3846
2SC3847
2SC3947
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jb transistor
Abstract: 2SC2356 374C
Text: h'UdlTSU niC R O ELEC T R O N IC S "37 DE | 3 7 4 ‘ì 7 t . E □□□1751 FMICROELECTRONICS U JIT S U 2SC2356 SILICON HIGH SPEED TRIPLE DIFFUSED ^ NPN POWER TRANSISTOR 10 AMP, 400 VOLT r- J3-/J 3 7 4 9 7 1>2 FUJITSU MICROELECTRONICS 37C 01751 ABSOLUTE MAXIMUM RATINGS
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374T7bE
2SC2356
O-220
jb transistor
2SC2356
374C
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2SC3844
Abstract: 374171 reo4
Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range
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374R7b5
2SC3844
2SC3844
200jiH
-450V
374171
reo4
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mb88625b
Abstract: MB88625B-PF MBM27C256A-25CZ D64001S-3C P Channel Equivalent to buz 350 MBM27C256A-25CV MB88625B-PSH pa2al MB886 GD03
Text: FUJITSU LTD S3E D m 3 7 4 cì75fc. GD03131 bOQ * F C A J cP June 1992 E m h n 1 -° T _ DATA SHEET = = = - FUJITSU / F2MCB-4L FAMILY MB88620B SERIES SINGLE CHIP MICROCONTROLLER WITH ADC AND VFD DRIVER DESCRIPTION The Fujitsu MB88620B Seríes is a member of the F2M C -4L Family, and features a 26
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GD03131
MB88620B
Vco-40V
12K/16K
MQP-64C-P01)
4g-T9-44
M64004S-1C
mb88625b
MB88625B-PF
MBM27C256A-25CZ
D64001S-3C
P Channel Equivalent to buz 350
MBM27C256A-25CV
MB88625B-PSH
pa2al
MB886
GD03
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spa 40
Abstract: No abstract text available
Text: MCP Multi-Chip Package FLASH MEMORY 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY MB84VB2000-io/MB84VB2001-io • FEATURES • Contain 2 chips of MBM29LV800A, and each chip have separate CE.
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MB84VB2000-io/MB84VB2001-io
MBM29LV800A,
MB84VB2000:
MB84VB2001:
F9804
spa 40
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Untitled
Abstract: No abstract text available
Text: M CP Multi-Chip Package FLASH M EM ORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2002-1o/M B84 VA2003-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C
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MB84VA2002-1o/M
VA2003-1o
MB84VA2002:
MB84VA2003:
D-63303
F9805
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Untitled
Abstract: No abstract text available
Text: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 1M(x 8) STATIC RAM M B84 VA2004-1o/MB84 VA2005-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C
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VA2004-1o/MB84
VA2005-1o
MB84VA2004:
MB84VA2005:
D-63303
F9804
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2SC2433
Abstract: 2SG24 2SA1043 2SC2434 2SA1044 2SC1043 1baa
Text: FUJITSU MICRO ELE CTRONICS 3 IE D Bi 3 7 4 m 2 QDlbSOH 3 S F M I 3 T - 33 - X3 FUJITSU Edition 1.1 PRODUCT PROFILEZ 2SA1043, 2SA1044, 2SC2433, 2SC2434 Silicon High Speed Power Transistor DESCRIPTION T h is series are silicon PNP/NPN planer general purpose, high power switching
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374m2
2SA1043,
2SC2433,
2SC2434
37417b2
T-33-Ã
T-33-23
2SA1044,
2SC2433
2SG24
2SA1043
2SC2434
2SA1044
2SC1043
1baa
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.5J1
Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Text: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power
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2SC3056,
2SC3056A
2SC3056/2SC3056A
Q01tiS70
9036-f
.5J1
2SC3056A
1S80
2SC3056
high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz
transistor 9036
Q01t
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diode in3064
Abstract: No abstract text available
Text: August 1990 Edition 3.0 - FUJITSU DATA SHEET MB40578/40578-7 1 CHANNEL 8-BIT VIDEO A/D CONVERTER 1 CHANNEL 8-BIT VIDEO A/D CONVERTER 20MSPS The Fujitsu MB40578 is a low power ultra-high speed video A/D converter fabricated with Fujitsu Advanced Bipolar Technology. The
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MB40578/40578-7
20MSPS)
MB40578
078-908A
diode in3064
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA S H EE T MB81C4258A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258A is CMOS fully decoded dynamic RAM organized as 262,144 words x 4
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MB81C4258A-60/-80/-10
MB81C4258A
MB81C4258A
ZIP-20P-M02
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Untitled
Abstract: No abstract text available
Text: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM M B84 VA2000-1o/MB84 VA2001 -10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C
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VA2000-1o/MB84
VA2001
MB84VA2000:
MB84VA2001:
F9805
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SDRAM DIMM 1997
Abstract: No abstract text available
Text: FUJITSU May 1997 Revision 1.0 data sheet SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a hgh performance, 64-megabtye synchronous, dynaric RAM module organeed as 8M words by 72 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC8UV7284-
64MByte
64-megabtye
168-pin,
MB81164842A-
125MHz)
100M90-0
MP-SDRAMM-DS-20511-5/97
SDRAM DIMM 1997
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Untitled
Abstract: No abstract text available
Text: June 1990 Edition 3.0 FUJITSU DATASHEET MB509 TWO MODULUS PRESCALER WITH STAND-BY MODE TWO MODULUS PRESCALER WITH STAND-BY MODE The Fujitsu M B 5 0 9 is a low power two modulus prescaler which enables pulse swallow function. The M B 5 0 9 is used in P h a se Locked Loop PLL frequency
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MB509
B87076.
DIP-08P-M01
D-6000
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Untitled
Abstract: No abstract text available
Text: FUJITSU M I CRO EL EC TR ON IC S FUJITSU S3E D • 3 7 ‘H 7 t a GD07417 7 ■ MB85235-10 IH X 9 DRAM MODULE MB85235-12 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The F u j i t s u MB85235 is a fully decoded, dynamic CMOS r a n d o m access m e mory module w i t h eight MB81C1000, in
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GD07417
MB85235-10
MB85235-12
MB85235
MB81C1000,
30-pin
30-pad
MB8523S
MB85235
MB81Creshed.
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