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JST Manufacturing CDS-SFT61-250N-CMKS-L APPLIC/DIE SET FOR IND STD PRESS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CDS-SFT61-250N-CMKS-L	Bulk			1	1 $4830.4 10 $4830.4 100 $4830.4 1000 $4830.4 10000 $4830.4	Buy Now
Dwyer Instruments Inc FT-612 Correlated Flow Tube, 65Mm, 316Ss Float; Product Range:Mtf Series \|Dwyer FT-612
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	FT-612	Bulk			1	1 $131.45 10 $118.31 100 $118.31 1000 $118.31 10000 $118.31	Buy Now
RS	FT-612	Bulk			1	1 $184.94 10 $175.69 100 $147.95 1000 $147.95 10000 $147.95	Get Quote
Hubbell Premise Wiring LFT6121812 AL LADDER, TEE,6inchH,12inchW1,18inchW2,12inchR \| Hubbell Wiring Device-Kellems LFT6121812
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LFT6121812	Bulk		18 Weeks	1	1 $209.22 10 $209.22 100 $209.22 1000 $209.22 10000 $209.22	Get Quote
Hubbell Premise Wiring LFT6121824 AL LADDER, TEE,6inchH,12inchW1,18inchW2,24inchR \| Hubbell Wiring Device-Kellems LFT6121824
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LFT6121824	Bulk		18 Weeks	1	1 $300.04 10 $300.04 100 $300.04 1000 $300.04 10000 $300.04	Get Quote
Hubbell Premise Wiring LFT6122424 AL LADDER, TEE,6inchH,12inchW1,24inchW2,24inchR \| Hubbell Wiring Device-Kellems LFT6122424
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LFT6122424	Bulk		18 Weeks	1	1 $324.36 10 $324.36 100 $324.36 1000 $324.36 10000 $324.36	Get Quote

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FT612 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FT6120		Unknown	FET Data Book		Scan	PDF
FT6120D		Unknown	FET Data Book		Scan	PDF
FT6121		Unknown	FET Data Book		Scan	PDF
FT6121D		Unknown	FET Data Book		Scan	PDF
FT6122		Unknown	FET Data Book		Scan	PDF
FT6122D		Unknown	FET Data Book		Scan	PDF

FT612 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FT61256 High Speed 32Kx8 Static CMOS Ram FEATURES High Speed Equal Access and Cycle Times – 12/15/20/25/35 ns (Commercial) – 15/20/25/35/45 ns (Industrial) – 20/25/35/45/55/70 ns (Military) Low Power Single 5V±10% Power Supply Easy Memory Expansion Using CE and OE Inputs	Original	32Kx8 28-Pin 32-Pin FT61256	PDF
Untitled Abstract: No abstract text available Text: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK	Original	FT61256 --28-Pin --32-Pin 144-bit	PDF
Untitled Abstract: No abstract text available Text: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK	Original	FT61256 --28-Pin --32-Pin 144-bit	PDF
FT6122D Abstract: ft6122 fast fet MHz Text: January 1990 Edition 1.1 PRODUCT PROFILE FT6122, FT6122D Power MOS FET Arrays Silicon N-channel Enhancement Mode Power MOS FET Arrays ABSOLUTE M A X IM U M R A TIN G S Rating Ta = 25°C Symbol Condition Value U nit Drain Source Voltage V qss 120 V Gate Source Voltage	OCR Scan	FT6122, FT6122D FT6122D ft6122 fast fet MHz	PDF
FT6120D Abstract: FT6120 Text: January 1990 Edition 1.1 F u jf r s u PRODUCT PROFILE'. FT6120, FT6120D Power MOS FET Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T ABSOLUTE M AXIM UM RATINGS Rating Ta = 25°C S ym b o l C ondition U nit Value D rain Source Voltage V o ss	OCR Scan	FT6120, FT6120D FT6120D FT6120	PDF
ft6121d Abstract: FT6121 5MSD Text: January 1990 Edition 1.1 FUJITSU FT6121, FT6121D Power MOS FE T Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T A B S O L U T E M A X IM U M R A T IN G S Rating Ta = 25°C S ym b o l C ond ition Value U nit Drain Source Voltage V qss 120 V	OCR Scan	FT6121, FT6121D ft6121d FT6121 5MSD	PDF
FT6122D Abstract: FT811 FT6120 FT6122 FT6120D FT6112D FT6112 Text: Section 4 =ield Effect Transistor Arrays — A t a Glance Maximum Frequency Pag* D e vic e C m * ns V d s s (V ) Id (A) 4 -7 FT6110 FT8110D H M -65 120 120 ±2 ±2 4-11 FT6111 FT6111D R M -65 120 120 ±3 ±3 4-15 FT6112 FT6112D R M -6S 120 120 ±4.5 ±4.5	OCR Scan	FT6110 FT8110D FT6111 FT6111D FT6112 FT6112D FT6120 FT6120D FT6121 FT6121D FT6122D FT811 FT6122	PDF
FT6122D Abstract: ft6120d FT6122 FT6112D FT6120 FT6111 ft6121d 2sk 100a FT6121 VDD-100V Text: - 142 - * f S s tt £ ffi & ffi S A £ tè , 1 % h' V E# * ft * (A) (V) ï r~ * * P d /P ch (W) Ig s s (max) (A) Vg s (V) 1 K (min) (max) Vd s (A) (A) (V) 14 (Ta=25*C) (min) (max) Vd s (V) (V) (V) (min) (S) W Id (A) Vd s (V) Id (A) Motor-D MOS N E 120 DSS	OCR Scan	FT6111 FT6111D FT6112 FT6112D FT6120 FT6840 130nstyp FT6860 195nstyp FT6861 FT6122D ft6120d FT6122 FT6112D FT6120 FT6111 ft6121d 2sk 100a FT6121 VDD-100V	PDF
2T908A Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117 Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,	OCR Scan	T-0574D. 30Eiaa Coi03nojiH 2T908A 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117	PDF
FT6122D Abstract: FT6120D rIP 31 TRANSISTOR FT6121D FT6122 FT6120 6122D FT6110D fet transistor ft FT6112D Text: P ow er Transistor P roducts F ie ld E ffe ct Transistor Arrays INTRODUCTION POWER MOS FE T A R R A Y SERIES D escription This series is S ilicon Enhancement-Mode Power MOS FE T Arrays. Each array consists o f 4 MOS FETs. The array is packaged in a small plastic 12-pin single in-line package w ith o r w ith o u t an isolated heatsink.	OCR Scan	12-pin FT6122D FT6120D rIP 31 TRANSISTOR FT6121D FT6122 FT6120 6122D FT6110D fet transistor ft FT6112D	PDF