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    FT5753M DARLINGTON TRANSISTOR ARRAY Search Results

    FT5753M DARLINGTON TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    FT5753M DARLINGTON TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FT5753M

    Abstract: FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MI CR OELECTRON ICS 31E » E3 0Qlbbb2 T Q F M I T '-'iZ 'O .s r January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ FT5753M, FT5756M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Ta » 25° C Symbol Rating Storage Temperature T «9 Junction Temperature


    OCR Scan     		FT5753M, FT5756M T-43-25 c/500 FT5753M FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array PDF

    FT5769M

    Abstract: NPN 337 FT5764M FT5755M FT5753M FT5756M ft5760m PNP DARLINGTON ARRAYS FT5754 FT5754M
    Text: Section 3 Darlington Transistor Arrays — A t a Glance Maximum Ratings V c e o V lc(A> Pag« D *v lC * C aa«(n«) Polarity 3 -9 FT5753M FT5756M R M -£ 5 NPN NPN 100 100 ±1.5 ±1-5 3-11 FT5754M FT5757M R M -6 5 NPN NPN 100 100 ±3 ±3 3-13 FT5755M FT5750M


    OCR Scan     		FT5753M FT5756M FT5754M FT5757M FT5755M FT5750M FT5759M FT5760M FT5761M FT5763M FT5769M NPN 337 FT5764M PNP DARLINGTON ARRAYS FT5754 PDF

    FT5753M

    Abstract: ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array
    Text: January 1990 Edition 1.1 FT5753M, FT5756M FUJITSU - P R O D U C T P R O F IL E Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ R a tin g Ta = 2 5 °C S ym bol S to ra g e T e m p e ra tu re C o n d itio n T *9 J u n c tio n T e m p e ra tu re


    OCR Scan     		FT5753M, FT5756M FT5753M ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array PDF

    FT5753M

    Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M
    Text: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or


    OCR Scan     		12-pin FT5753M FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M PDF