FS10VSJ Search Results

TO-220FN

Abstract: TO220FN mosfet fs series
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 4V DRIVE Type No. ^ 0» M FS10ASJ-03 FS10UMJ-03 FS10VSJ-Q3 FSI0KMJ-03 FS30ASJ-03 FS30UMJ-03 FS30VSJ-03 FS30KMJ-03 FS30SMJ-03 FS50ASJ-03 FS50UMJ-03 FS50VSJ-03 FS50KMJ-03 FS50SMJ-03 * FS70UMJ-03 FS70VSJ-03 FS70KMJ-03

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10VSJ-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS10VSJ-3 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS . 150V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10VSJ-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS10VSJ-03 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS . 30V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10VSJ-06 HIGH-SPEED SWITCHING USE FS10VSJ-06 OUTLINE DRAWING 1 q Dimensions in mm J w e O w r •G 1 6 +i CD c\i 4V DRIVE q GATE w D R A IN V d s s .60V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10VSJ-03 HIGH-SPEED SWITCHING USE FS10VSJ-03 OUTLINE DRAWING Dimensions in mm ; i , ! 1.3 il u u\ J -2 .3. • 4V DRIVE • VDSS . 30 V • rDS ON (MAX) .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10VSJ-03 HIGH-SPEED SWITCHING USE FS10VSJ-03 OUTLINE DRAWING L J q w e D im e n s io n s in m m •V 6 +i CD Q w r 4V DRIVE Vd ss q w e r .3 0V rDS ON (

FS10VSJ-06

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10VSJ-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS10VSJ-06 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS . 60V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10VSJ-06 HIGH-SPEED SWITCHING USE FS10VSJ-06 OUTLINE DRAWING Dimensions in mm * -.2 -.4; • 4V DRIVE • Vdss .60V <\| 4 drain • rDS ON (MAX) . 7 0 m Q

FS10VSJ-2

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10VSJ-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS10VSJ-2 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS . 100V

FS10VSJ-06

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

fs5asj-3

Abstract: mosfet fs series
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 4V DRIVE (CONTINUED) Max. ratines POv'vER D E v l C E S Type No. VDSS m Pd m W Electrical characteristics (TYP.) V38$ TYP. MAX. Package Ctis ¥<a{W iv) outline W FS5ASJ-2 * FS5UMJ-2 ★ FS5VSJ-2 * FS5KMJ-2 * FS10ASJ-2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

FS10VSJ-2

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

marking code H8

Abstract: FS30UMJ-06 MP-3 Package MOSFET A20 N03
Contextual Info: m u a s * Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O f t F O F /T i D â t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Max imum Ratings, Tc = 25°C Electrical Characteristics

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FS10VSJ-06

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device V DSS •d Pd Number Electrical Characteristics

Contextual Info: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 OUTLINE DRAWING 1 q Dimensions in mm J w e •G 1 6 +i CD O w r c\i q w e r 4V DRIVE V d s s .15 0 V

10VSJ

Abstract: chcj
Contextual Info: MITSUBISHI Nch POWER MOSFET | FS 10VSJ -2 I I | HIGH-SPEED SWITCHING USE FS1OVSJ-06 j • 4V DRIVE • v d s s . •100V • rDS ON (MAX) .

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

gs 8200

Contextual Info: m N EH EX S llO ft FOTITI D dtd Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Device

fs10smj-2

Abstract: FS30UMJ-3 FS30KMJ3
Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O r t F O IT T I Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C