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    FS1 MOSFET Search Results

    FS1 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    FS1 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVSH-2 HIGH-SPEED SWITCHING USE FS1 OVSH-2 • 2.5V DRIVE • VDSS . 1 0 0 V • rDS ON (MAX) . 0.21 £2


    OCR Scan     		PDF

    FS10VSJ-2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVSJ-2 HIGH-SPEED SWITCHING USE FS1 OVSJ-2 OUTLINE DRAWING L q J w e O w r 4V DRIVE V d s s .100V rDS ON (MAX). 0.19Q


    OCR Scan     		O-22QS FS10VSJ-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn


    OCR Scan     		160mn 1CH23 PDF

    PN channel MOSFET 10A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-14A HIGH-SPEED SWITCHING USE FS1 OVS-14A OUTLINE DRAWING I q J w e Q w r o- V d s s . 700V Id . 10A


    OCR Scan     		FS1OVS-14A OVS-14A O-22QS 57KH23 PN channel MOSFET 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-5 HIGH-SPEED SWITCHING USE I FS1 OVS-5 OUTLINE DRAWING Dimensions in mm 5 1.3 250V 0.52Í2 I D . 10 A GATE DRAIN SOURCE DRAIN


    OCR Scan     		O-220S 571CH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OASJ-3 HIGH-SPEED SWITCHING USE FS1 OASJ-3 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .150V . 160mi2 . 10A 90ns APPLICATION


    OCR Scan     		160mi2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OAS-2 HIGH-SPEED SWITCHING USE FS1 OAS-2 * * ' 10V DRIVE ' V d s s . . 1oov ' rDS ON (MAX) . . 0.23Í2 ' Id . . 10A ' Integrated Fast Recovery Diode (TYP.) 100ns APPLICATION


    OCR Scan     		100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET f FS1OASJ-3 ! ï HIGH-SPEED SWITCHING USE FS1 OASJ-3 * • 4V DRIVE • VDSS . 1 5 0 V • rDS ON (MAX) . 1 6 0 m iî


    OCR Scan     		100nH PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OASH-2 HIGH-SPEED SWITCHING USE FS1 OASH-2 ♦ f ' 2.5V DRIVE ' V . . 1oov ' rDS ON (MAX) . . 0.21 Q. ' Id . . 10A ' Integrated Fast Recovery Diode (TYP.) d ss 95ns A P P LIC A TIO N


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION


    OCR Scan     		PDF

    SAM25

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-6 HIGH-SPEED SWITCHING USE FS1 OVS-6 OUTLINE DRAWING Dimensions in mm , 4.5 . .1-3 C\ a ,CQ -0 ^ - 4 ; 0.5 •ï • V dss . 300V • rDS ON (MAX) . 0.68Q


    OCR Scan     		O-220S SAM25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OASH-3 HIGH-SPEED SWITCHING USE FS1 OASH-3 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 1 0 .2 l] 0 .5 1 0 .2 0.8 Q i ' 2.5V DRIVE ' V d s s . .,150V 160mi2 . 10A


    OCR Scan     		160mi2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVSH-2 HIGH-SPEED SWITCHING USE FS1 OVSH-2 O UTLINE DRAWING Dimensions in mm L J q w e Q w r 2.5V DRIVE V d s s .1 0 0 V rDS ON (M A X ) . 0.21 Î Ï


    OCR Scan     		O-22QS 57KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-6 HIGH-SPEED SWITCHING USE FS1 OVS-6 OUTLINE DRAWING Dimensions in mm ♦ •st q w e ■V 6 -H CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s .300V


    OCR Scan     		O-22QS 57KH23 PDF

    FS10VS-2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-2 HIGH-SPEED SWITCHING USE FS1 OVS-2 OUTLINE DRAWING I q J w e Q w r 6 +i CO C\i q w e r 10V DRIVE V d s s . 100V rDS ON (


    OCR Scan     		100ns O-22QS 20EMPERATURE 571Q-123 FS10VS-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-10 HIGH-SPEED SWITCHING USE FS1 OVS-10 OUTLINE DRAWING I q Dimensions in mm J w e •V o -H CD Q w r oj q w e r q o- GATE DRAIN SOURCE DRAIN V d s s .5 0 0 V


    OCR Scan     		FS1OVS-10 OVS-10 O-22QS 571Q1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVS-3 HIGH-SPEED SWITCHING USE FS1 OVS-3 OUTLINE DRAWING . Dimensions in mm . 1 q J w e 6 +i CD O w r c\i q w e r 10V DRIVE V d s s .15 0 V GATE DRAIN


    OCR Scan     		100ns O-220S PDF

    FS1 MOSFET

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OSM-9 HIGH-SPEED SWITCHING USE FS1 OSM-9 OUTLINE DRAWING D im e n s io n s ! in m m 4.5 0.6 rP - • VDSS . 4 5 0 V ¡i ; 2.8 - ;• G A T E D R A IN


    OCR Scan     		1CH23 571Q-' 571Q2 FS1 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 OUTLINE DRAWING 1 q Dimensions in mm J w e •G 1 6 +i CD O w r c\i q w e r 4V DRIVE V d s s .15 0 V


    OCR Scan     		160mi2 O-22QS 7KH23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OAS-3 HIGH-SPEED SWITCHING USE FS1 OAS-3 OUTLINE DRAWING Dimensions in mm 6.5 5.0 1 0.2 -h 1J 0.5 1 0.2 0.8 C /n ? n q w e Q w r q w e r h 10V DRIVE V d s s .15 0 V


    OCR Scan     		100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OSM-9 HIGH-SPEED SWITCHING USE FS1 OSM-9 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 < >3.2 V* 5.45 0.6 4 O w q w e r q V d s s . 4 5 0 V rDS (ON (MAX). 0 .7 3 Q


    OCR Scan     		FS10SM-9 PDF

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998 PDF

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original     		BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998 PDF

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998 PDF