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Rochester Electronics LLC FS100R12PT4 INSULATED GATE BIPOLAR TRANSISTO
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DigiKey	FS100R12PT4	Bulk	1,361		3	1 - 10 $126.98 100 $126.98 1000 $126.98 10000 $126.98	Buy Now
Rochester Electronics LLC FS100R12W2T7BOMA1 FS100R12W2T7 - LOW POWER EASY
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DigiKey	FS100R12W2T7BOMA1	Bulk	471		5	1 - 10 $66.7 100 $66.7 1000 $66.7 10000 $66.7	Buy Now
Rochester Electronics LLC FS100R12KT4PBPSA1 INSULATED GATE BIPOLAR TRANSISTO
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DigiKey	FS100R12KT4PBPSA1	Bulk	338		2	1 - 10 $205.97 100 $205.97 1000 $205.97 10000 $205.97	Buy Now
Rochester Electronics LLC FS100R12KT4B11BOSA1 IGBT MODULE
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DigiKey	FS100R12KT4B11BOSA1	Tray	310		3	1 - 10 $110.26 100 $110.26 1000 $110.26 10000 $110.26	Buy Now
Rochester Electronics LLC FS100R12KT4BOSA1 FS100R12 - IGBT MODULE
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DigiKey	FS100R12KT4BOSA1	Bulk	272		3	1 - 10 $126.9 100 $126.9 1000 $126.9 10000 $126.9	Buy Now

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FS-100 R 12 Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
FS100R12KE3	Eupec	IGBT Inverter Module	Original	PDF
FS100R12KE3	Eupec	TRANS IGBT MODULE N-CH 1200V 140A	Original	PDF
FS100R12KE3	Infineon Technologies	TRANS IGBT MODULE N-CH 1200V 140A	Original	PDF
FS100R12KE3_B3	Eupec	IGBT Inverter Module	Original	PDF
FS100R12KE3_B3	Eupec	TRANS IGBT MODULE N-CH 1200V 140A	Original	PDF
FS100R12KE3BOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE 1200V 100A	Original	PDF
FS100R12KS4	Eupec	IGBT Inverter Module	Original	PDF
FS100R12KS4	Infineon Technologies	TRANS IGBT MODULE N-CH 1200V 130A	Original	PDF
FS100R12KS4BOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A	Original	PDF
FS100R12KT3	Eupec	IGBT-Module	Original	PDF
FS100R12KT3	Infineon Technologies	TRANS IGBT MODULE N-CH 1200V 140A	Original	PDF
FS100R12KT3BOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A	Original	PDF
FS100R12KT4	Infineon Technologies	IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; I_C(max): 100.0 A; V_CE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2;	Original	PDF
FS100R12KT4_B11	Infineon Technologies	IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; I_C(max): 100.0 A; V_CE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2;	Original	PDF

FS100R12KT4B11BOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT FS100R12KT4B11BOSA1	Original	PDF
FS100R12KT4BOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A	Original	PDF
FS100R12KT4G	Infineon Technologies	IGBT Modules up to 1200V SixPACK; Package: AG-ECONO3-1; I_C(max): 100.0 A; V_CE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 3;	Original	PDF
FS100R12KT4G_B11	Infineon Technologies	IGBT Modules up to 1200V SixPACK; Package: AG-ECONO3-1; I_C(max): 100.0 A; V_CE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 3;	Original	PDF
FS100R12KT4GB11BOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A	Original	PDF
FS100R12KT4GBOSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A	Original	PDF

FS-100 R 12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fs100r12ks4 Abstract: No abstract text available Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 100 R 12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage	Original	FS100R12KS4, fs100r12ks4	PDF
transistor 184 Abstract: No abstract text available Text: FS 100 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften 1E lectrical properties Hochstzulässige W erte V ces Maximum rated values 600 V 100 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,052 R th J C DC, pro Zweig / per arm	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: FS 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 100 A lc Therm ische Eigenschaften Therm al properties 0,047 :'C /W Rthjc DC, pro Baustein / per module DC, pro Zweig / per arm 0,280 C/W	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: FS 25 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 25 A 50 A 100 W ge 20 V Inversdiode Inverse diode LU 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte	OCR Scan	34G32R7	PDF
Untitled Abstract: No abstract text available Text: BNC 75 ohm PCB Receptacles Fig. 1 Standard Height BNC Printed Circuit Board Right Angle Bulkhead Receptacles * .200 .500 12.7 P Amphenol R <5.1). I 1 .200 — (5.1) .468(11.9) 400 - ( 10 .2 ) - L_ fS G S 100 .079(2.0) (2 .9 ) < » •* 035(0.9) Ofa 2 p la c w	OCR Scan	1-71043-1010A 31-5329-72RFX	PDF
Untitled Abstract: No abstract text available Text: §1111 E R T R U fS T I I I / Preliminary • S E M I C O N D U C T O R CAT24LC02A/CAT24LC02AI 2K-Bit SERIAL E2PROM FEATURES ■ l2C Bus Compatible* 100 Year Data Retention ■ Low Power CMOS Technology 8 pin DIP, 8 pin SO or 14 pin SO Package ■ 8 Byte Page Write Buffer	OCR Scan	CAT24LC02A/CAT24LC02AI CAT24LC02AZ) CAT24LC02A/CAT24LC02AI CAT24LC02A/ CAT24LC02AI	PDF
Si53304 Abstract: No abstract text available Text: Si53304 1:6 L OW J I T T E R U NIVERSAL B U F F E R /L EVEL T RANSLATOR WITH 2 : 1 I NPUT M UX A N D I NDIVIDUAL OE Features         6 differential or 12 LVCMOS outputs  Ultra-low additive jitter: 100 fs rms  Wide frequency range: 1 to 725 MHz	Original	Si53304 32-QFN	PDF
f12n10L Abstract: f12n10 Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use	OCR Scan	RFP12N10L TA09526. RFP12N10L 0-56mA AN7254 AN7260 75BVds f12n10L f12n10	PDF
Untitled Abstract: No abstract text available Text: OßlbßOG Q0b3MEE 472 •* r a ANALOG ID E V IC ES 14-Bit, 65 MSPS Monolithic A/D Converter PRELIMINARY TECHNICAL DATA FEATURES 65 MSPS Guaranteed Sample Rate 40 MSPS Version Available Sampling jitter < 300 fs 100 dB Multi-tone SFDR Single +5V Supply 1.4 W Power Dissipation	OCR Scan	14-Bit, AD9042 AD6640 AD6644 AD6644 0Dk343D AD6644AST	PDF
1S1555 Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176 Text: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300	Original	1N4148 1N4148 1S1553 1S1555 1SS133 1SS176 1SS270 DO-35 DO-34 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555	PDF
MJ10047 Abstract: mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A Text: It 6 3 6 7 2 54 MOTOROLA SC »e \| b3l=?SS4 C X S T R S / R F . DOfiDTìS 96D 7 \| 80995 T- ?-fs MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25, 50, and 100 A M P E R E - N P N S IL IC O N P O W E R D A R L IN G T O N T R A N S IS T O R 25 kVA EN E R G Y M A N A G EM EN T S E R IE S	OCR Scan	b3b7254 Mi10041 J10044 J10047 MJ10041, MJ10044, MJ10047 MJE15028 2N2322 MJE15029' mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A	PDF
Si53303 Abstract: No abstract text available Text: Si53303 D UAL 1:5 L OW J I T T E R B UFFER / L EVEL T RANSLATOR Features         10 differential or 20 LVCMOS outputs Ultra-low additive jitter: 100 fs rms Wide frequency range: 1 to 725 MHz Any-format input with pin selectable	Original	Si53303 44-QFN	PDF
G10FS Abstract: G30FS G6FS G15FS hvca G30FS G20FS G8FS hvca G4FS g5fs Text: 2 7 0 b f l 4 b DOOGXbb TG7 SERIES G-FS 2,000 to 30,000 Volts 10 to 25 mA 100 ns Recovery Axial Lead Diodes • Fast Recovery Low Current. High Voltage Rectifiers HVCA Num ber Repetitive Peak R everse Voltage V rrm V Volts Avg. Forw ard Current Max. • f a v m @ 55*C	OCR Scan	270bfl4b G20FS G25FS G30FS G10FS G6FS G15FS hvca G30FS G8FS hvca G4FS g5fs	PDF
Si53314 Abstract: in 5007 Text: Si53314 1 : 6 L O W J IT TE R U N I V E R S A L B U FF E R / L E V E L T R A N S L A T O R W IT H 2 : 1 I N P U T M U X A N D I N D I V I D U A L O E < 1 . 2 5 G H Z Features        6 differential or 12 LVCMOS outputs  Ultra-low additive jitter: 100 fs rms 	Original	Si53314 32tial in 5007	PDF

FS12-200 Abstract: No abstract text available Text: TOLERANCE UNLESS SPECIFIED = , X X X = + / - .0 0 5 FS 12-200. D C 2 X X = + /- .0 1 5 F R A C T IO N S ^ + /- .032 W W W = YEAR, WEEK X X X = SITECODE PRODUCTION TESTS TURNS RATI 0 = 100 % 1 -2 675 TO 815 DC RESISTANCE ( 3 - 4 ) 8 2 5 T O 9 70 ( 5 - 6 ) 2 .3 T O 3 .5	OCR Scan	FS12-200. 30V/60HZ FS12-200	PDF
Untitled Abstract: No abstract text available Text: 15.20 13.00 - -Q fs / & '0; o % >% > 10 d o' I I % 3.90 2.60 6.80 13.50 PCB LAYOUT (BOTTOM VIEW PC FILE NAME: MDE70SGS.DWG c o p y r ig h t 1998 by c u i s t a c k , in c . C > oi m o SPECIFICATIONS: RATING: 12VDC @ 1 A LIFE: 5 ,0 0 0 CYCLES MIN INSULATION RESISTANCE: 100 MOHM MIN @ 5 0 0 V DC	OCR Scan	MDE70SGS 12VDC MDE-70SGS	PDF
MO-220 7x7 0.4 pitch Abstract: si5331 Si53313 Text: Si53313 D UAL 1:5 L OW J I T T E R B UFFER / L EVEL T RANSLATOR <1.25 GH Z Features        10 differential or 20 LVCMOS outputs Ultra-low additive jitter: 100 fs rms  Wide frequency range: 1 MHz to 1.25 GHz  Any-format input with pin selectable	Original	Si53313 44-QFN MO-220 7x7 0.4 pitch si5331	PDF
Si53320 Abstract: si5332 Text: Si53320 1:5 L O W J I T T E R LVPECL C LOCK B UFFER W I T H 2:1 I NPUT M UX Features         5 LVPECL outputs  Ultra-low additive jitter: 100 fs rms  Wide frequency range: 1 to 725 MHz  Input compatible with LVPECL, LVDS, CML, HCSL, LVCMOS	Original	Si53320 20-TSSOP MC100LVEP14, SY100EP14U, MAX9310 si5332	PDF
uf5404 Abstract: HER103 HER106 HER108 UF4002 UF4003 UF4004 UF4006 UF4007 her3Q Text: RECTIFIER DIODES, Ultra Fast Recovery, Plastic Package ;i-iÍÍSitsí:?fs P a rt N um ber M a x im u m A ve ra g e R e c tifie d C u rre n t at T. I A m p s iM UF4001 UF4002 UF4003 55 UF4&04 UF4&Q5 In v e r s e V o ftag « i P IV (V o lts ) 50 100 200 400	OCR Scan	UF4001 UF4002 UF4003 UF4004 UF4006 UF4007 UF540Ã UF5401 F5403 UF5404 HER103 HER106 HER108 UF4006 her3Q	PDF
Si53315 Abstract: 44qfn Text: Si53315 1 : 1 0 L O W J I TT E R U N I V E R S A L B U F F E R /L E V E L T R A N S L A T O R W IT H 2 : 1 I N P U T M U X A N D I N D I V I D U A L O E < 1 . 2 5 G H Z Features         10 differential or 20 LVCMOS outputs Ultra-low additive jitter: 100 fs rms	Original	Si53315 44qfn	PDF
Untitled Abstract: No abstract text available Text: UNCO NTRO LLED DO CUM ENT 0 2 .4 0 REV, [ 0 0 .0 9 « A OJ1 t 2,80+0.20 [ 0,110=t 0,0 0 8 ] I n 0 .5 0 ±0.10 REFLOW PROFILE r l _ i 230 MAX. G 200 1/Ò LU rr. IM 125 1 100 LU 75 FS 1— 50 25 0 ~ 0 .1 0 E 0 .0 0 4 ] F 1 » J 0.15 EO.006] J 0,80 E0.031] 2 P LS J	OCR Scan	LX2832SRC-TR	PDF
N30010 Abstract: No abstract text available Text: I 1. < -x I V BR EBO l I IE=j - s: I I &: $?a$% R : 55~110, 0 : 80-160 - 1.5 V 14 1000 500 12 : J P ii h c\ h n 300 10 100 8 6 50 30 10 4 5 3 a 2 lilII1 Ig-1OmA I I I I I In! 2 4 6 8 3L/3Y*fS “7 31 10 12 &m:R Vnn I 14 :vl 0.8 - _ LLyYlY -I, fT - IC \-,	Original		PDF
DN6847 Abstract: DN6847S Text: - 4 56 D N 6 8 4 7 //S E /yT E / S • * * 5 & fS V cc Ic c loUT Pd T 0pt T stu 0 f f ij f T M C ,E * 5 H - - 4 .5 V - 1 6 V 0 ffi^ T T L ^ M o s r „ - 2 5 ”C 18V 8m A 20m A 150m W —4 0 - t-100°C - 5 5 — + 125 V o H iiJ^ ;V T ^ -/ffiÌitF fclK (27kfl typ)	OCR Scan	DN6847//SE/yTE/S 150mW DN6847S) DN6847/SE/TE DN6847 N6847S DN6847, 175Gauss -30/iA, DN6847S	PDF
igbt power module FS 25 R 12 KF2 Abstract: 25 R 1200 KF Text: IGBT modules Type VcES lc IcRM v CEsal. Ion ts t, RthJC DC per arm V= •v\| = t»i = 25 -C, typ. 25 °C, typ. t,j = 25 °C, typ. t»i 1 ms tvj max O utline 25 °C, typ. V A A V us US us °c /w °c DF 100 R 12 KF-A FD 100 R 12 KF-K 1200 1200 100 100 200 200	OCR Scan		PDF

FS-100 R 12 Search Results

FS-100 R 12 Price and Stock

Rochester Electronics LLC FS100R12PT4

Rochester Electronics LLC FS100R12W2T7BOMA1

Rochester Electronics LLC FS100R12KT4PBPSA1

Rochester Electronics LLC FS100R12KT4B11BOSA1

Rochester Electronics LLC FS100R12KT4BOSA1

FS-100 R 12 Datasheets (32)

FS-100 R 12 Datasheets Context Search

fs100r12ks4

transistor 184

Untitled

Untitled

Untitled

Untitled

Si53304

f12n10L

Untitled

1S1555

MJ10047

Si53303

G10FS

Si53314

FS12-200

Untitled

MO-220 7x7 0.4 pitch

Si53320

uf5404

Si53315

Untitled

N30010

DN6847

igbt power module FS 25 R 12 KF2