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    FS 103 TEMPERATUR Search Results

    FS 103 TEMPERATUR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    FS 103 TEMPERATUR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN61048

    Abstract: EN-61048 EN61049 MKM 250-6 CVR200 25018 UL-810 55uF EN-61049
    Text: MFA 250Vac series MKM 250Vac series 250Vac 50 Hz 60 Hz upon request ±5% Capacitance Tolerance / Kapazitätstoleranz Tolérance sur la capacité / Tolerancia sobre la capacidad Working Temperature / Temperaturbereich Température d’utilisation / Temperatura de trabajo


    Original     		PDF 250Vac 250Vac Alu-C12 M8/M12 M8/M12 EN61048 EN-61048 EN61049 MKM 250-6 CVR200 25018 UL-810 55uF EN-61049

    8930

    Abstract: D2012
    Text: SAW Bandpass Filter 203624B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		PDF 203624B D2012 04A001 203SWR NI1016-CS02 8930 D2012

    110N12N

    Abstract: JESD22 mj 4310 IPD110N12N3G
    Text: IPD110N12N3 G IPS110N12N3 G OptiMOS 3Power-Transistor TM Features Product Summary • N-channel, normal level V DS 120 V R DS on ,max 11 mΩ ID 75 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPD110N12N3 IPS110N12N3 PG-TO251-3 PG-TO252-3 110N12N 110N12N JESD22 mj 4310 IPD110N12N3G

    Untitled

    Abstract: No abstract text available
    Text: IPD400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPD400N06N PG-TO252-3 400N06N PG-TO252-3:

    400N06N

    Abstract: D27D27 DIODE D27
    Text: IPD400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPD400N06N PG-TO252-3 400N06N PG-TO252-3: 400N06N D27D27 DIODE D27

    06CNE8N

    Abstract: No abstract text available
    Text: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    200N25N

    Abstract: IPB200N25N3 IPP200N25N3 IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N
    Text: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 20 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N

    030N10N

    Abstract: IPP030N10N3 JESD22 PG-TO220-3 IPP030N10N3 G DSV80
    Text: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features V DS • N-channel, normal level 100 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mΩ 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP030N10N3 IPI030N10N3 PG-TO220-3 PG-TO262-3 030N10N 10gerous 030N10N JESD22 PG-TO220-3 IPP030N10N3 G DSV80

    048N12N

    Abstract: 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 IPP048N12N3 G
    Text: IPP048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP048N12N3 PG-TO220-3 048N12N3 048N12N 048N12N3 PG-TO220-3 JESD22 IPP048N12N3 G

    048N12N

    Abstract: IEC61249-2-21 JESD22 PG-TO220-3 IPP048N12N3
    Text: IPP048N12N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 4.8 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP048N12N3 PG-TO220-3 IEC61249-2-21 048N12N 048N12N IEC61249-2-21 JESD22 PG-TO220-3

    marking F59 DIODE

    Abstract: 123N10N IEC61249-2-21 JESD22
    Text: IPB123N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.3 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB123N10N3 IEC61249-2-21 PG-TO263-3 123N10N marking F59 DIODE 123N10N IEC61249-2-21 JESD22

    05cn10l

    Abstract: JESD22 PG-TO220-3
    Text: IPP05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP05CN10L PG-TO220-3 05CN10L 05cn10l JESD22 PG-TO220-3

    027N10N

    Abstract: IPB027N10N3 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB027N10N3 PG-TO263-3 027N10N 027N10N JESD22

    05CN10L

    Abstract: 05cn10 IPP05CN10L G
    Text: IPP05CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP05CN10L PG-TO220-3 05CN10L 05CN10L 05cn10 IPP05CN10L G

    2n04h4

    Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
    Text: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18165 2N04H4 2n04h4 SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2

    114N12N

    Abstract: diode D83 IPP114N12N3 G IPP114N12N3 JESD22 PG-TO220-3 dd60
    Text: IPP114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on)max 11.4 mΩ ID • Very low on-resistance R DS(on) 75 A • 175 °C operating temperature


    Original     		PDF IPP114N12N3 PG-TO220-3 114N12N 114N12N diode D83 IPP114N12N3 G JESD22 PG-TO220-3 dd60

    122N10N

    Abstract: IPD122N10N3 G JESD22
    Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22

    SMD MARKING CODE g23

    Abstract: 2N06L09 ANPS071E IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 smd marking g23 smd diode UM 09
    Text: IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 PG-TO220-3-1 SP0002-18743 2N06L09 SMD MARKING CODE g23 2N06L09 ANPS071E IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 smd marking g23 smd diode UM 09

    027N10N

    Abstract: IPB027N10N3 IEC61249-2-21 JESD22
    Text: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB027N10N3 IEC61249-2-21 PG-TO263-3 027N10N 027N10N IEC61249-2-21 JESD22

    16cn10l

    Abstract: diode d54 JESD22 PG-TO220-3 IPP16CN10L G d54 marking IPP16CN10L
    Text: IPP16CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 15.7 mΩ ID 54 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPP16CN10L PG-TO220-3 16CN10L 16cn10l diode d54 JESD22 PG-TO220-3 IPP16CN10L G d54 marking

    2N06L64

    Abstract: IPD15N06S2L-64 2N06L PG-TO252-3-11 2N06L-64
    Text: IPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 64 mΩ ID 19 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD15N06S2L-64 PG-TO252-3-11 2N06L64 2N06L64 IPD15N06S2L-64 2N06L PG-TO252-3-11 2N06L-64

    2N08L50

    Abstract: IPD22N08S2L-50 PG-TO252-3-11 dd37
    Text: IPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max 50 mΩ ID 25 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original     		PDF IPD22N08S2L-50 PG-TO252-3-11 2N08L50 2N08L50 IPD22N08S2L-50 PG-TO252-3-11 dd37

    2N04L03

    Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
    Text: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2L-03 IPP80N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-20158 2N04L03 2N04L03 IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063

    2N0640

    Abstract: DSAE0013439 smd diode 513 IPD25N06S2-40 PG-TO252-3-11 PG-TO-252-3-1
    Text: IPD25N06S2-40 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 40 mΩ ID 29 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original     		PDF IPD25N06S2-40 PG-TO252-3-11 2N0640 2N0640 DSAE0013439 smd diode 513 IPD25N06S2-40 PG-TO252-3-11 PG-TO-252-3-1