2N5564
Abstract: A008 2N5565 2N5566
Text: 2N5564/5565/5566 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 to -3 -40 7.5 -3 10 2N5566 -0.5 to -3 -40 7.5 -3 20
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2N5564/5565/5566
2N5564
2N5565
2N5566
P-37406--Rev.
2N5564
A008
2N5565
2N5566
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Deltron quad output switcher
Abstract: Deltron power FT top 256 EN Deltron ft series Deltron Components Deltron power S Deltron 1000 watt moduflex Deltron power FS
Text: FS / FT SERIES 1-7 Outputs 400-1000 Watts FEATURES 0.99 power factor 5.5 watts per cubic inch 1-7 outputs, 400-1000 watts Advanced forward topology Universal input UL, CSA, TÜV IEC, EN , CE FCC, CISPR Class B EMI IEC, EN Immunity All outputs: Adjustable
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Weighing scale circuit
Abstract: 8-414
Text: 8400 Series 1 MHz Voltage to Frequency Converters S.E. Models 8410, 8412, 8413 Diff. Models 8414, 8417 BLOCK DIAGRAM OFFSET 22 M I IN 10 K v REF INTEGRATOR R A1 SCHMITT + v S TRIGGER A2 Iav One-Shot F/ F 2K 10 K R1 R2 v IN Q Dispenser Q=CV Features: • •
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Untitled
Abstract: No abstract text available
Text: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 0.95 ID A • Avalanche rated • Qualified according to AEC Q101
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BSD235N
IEC61249-2-21
PG-SOT-363
L6327:
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BSD235N
Abstract: No abstract text available
Text: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101
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BSD235N
PG-SOT363
PG-SOT363
L6327:
BSD235N
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Untitled
Abstract: No abstract text available
Text: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101
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BSD235N
PG-SOT-363
L6327:
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BSD235N
Abstract: JESD22-A114 L6327
Text: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101
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BSD235N
PG-SOT-363
L6327:
BSD235N
JESD22-A114
L6327
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Untitled
Abstract: No abstract text available
Text: IPP04N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.8 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP04N03LB
PG-TO220-3-1
04N03LB
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05N03LB
Abstract: IPP05N03LB JESD22 05N03L
Text: IPP05N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 5.3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP05N03LB
PG-TO220-3-1
05N03LB
05N03LB
JESD22
05N03L
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Untitled
Abstract: No abstract text available
Text: IPP05N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 5.3 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP05N03LB
PG-TO220-3-1
05N03LB
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Untitled
Abstract: No abstract text available
Text: IPP07N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 6.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP07N03LB
PG-TO220-3-1
07N03LB
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03N03LB
Abstract: No abstract text available
Text: IPP03N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 3.1 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP03N03LB
PG-TO220-3-1
03N03LB
03N03LB
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JESD22
Abstract: No abstract text available
Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP13N03LB
PG-TO220-3-1
13N03LB
JESD22
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13N03
Abstract: No abstract text available
Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP13N03LB
PG-TO220-3-1
13N03LB
13N03
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07N03LB
Abstract: 07N03 07n03l IPP07N03LB JESD22
Text: IPP07N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 6.6 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP07N03LB
PG-TO220-3-1
07N03LB
07N03LB
07N03
07n03l
JESD22
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13N03
Abstract: DSA003242
Text: IPP13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target application 30 12.8 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP13N03LB
PG-TO220-3
13N03LB
13N03
DSA003242
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C 337-25
Abstract: C 33725
Text: RS Components Extinguisher Use Guide 337-55 93 PM 30 BCE 21B S e e Note 1 NO 337-26 17 PM 50 FM 20 BCE BCE 34B 13B S e e Note 1 NO 0.95 kg BC Pow de r 337-26 23 FM 40 BCE 34B S e e Note 1 NO 1.0 kg BC Pow de r 626-1 63 1000DP BCE 34B YES YES 2.0 kg BC Pow de r
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1000DP
2000DP
1000M
2000M
FSP9000/F
C 337-25
C 33725
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10N03
Abstract: IPP10N03LB JESD22 10n03l
Text: IPP10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP10N03LB
PG-TO220-3-1
10N03LB
10N03
JESD22
10n03l
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10n03
Abstract: No abstract text available
Text: IPP10N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 30 V R DS on),max 9.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP10N03LB
PG-TO220-3-1
10N03LB
10n03
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Untitled
Abstract: No abstract text available
Text: IPP10N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS 30 V • Ideal for high-frequency dc/dc converters R DS on ,max 9.9 m: ID 50 A • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)
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IPP10N03LB
PG-TO220-3
10N03LB
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LM331
Abstract: LM331 f to v converter LM131 1Hz-100kHz LM231 LM131A LM331AH aeks LM331A H06C
Text: — 400 — LM131/A, LM231/A, LM331/A T + D Î , A Î S Œ * A Î ) 'B f E I C j : t « t 5 V -.F 3 ? -c, 7 ) M i r - ;u j g ¡ 6 * f c |i , 1H z Â>ü 1 0 0 k H z <7)*EH"CSâÆT è ?». tti tilt * — -7'S- 3 l / 7 ? I i i è S : i t t e ' ) , 3 T T L n.fäVU&Wj&tzl t 40V i f i O
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LM131/A,
LM231/A,
LM331/A
100kHz
50ppm/r
10kHz
LM131AK,
LM131H,
LM231AH,
LU231H,
LM331
LM331 f to v converter
LM131
1Hz-100kHz
LM231
LM131A
LM331AH
aeks
LM331A
H06C
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ci LM331
Abstract: lm331 LM331AH LM231AH H06C IT18S N06E 1Hz-100kHz 1Hz-11kHz LM2907
Text: — 400 — L M 1 3 1 /A, L M 2 3 1 /A, L M 3 3 1 /A T + D Î, A Î S Œ * A Î ) 'B f E I C j : t « t 5 V -.F 3 ? -c, 7 ) M i r - ;u j g ¡ 6 * f c |i , 1H z Â>ü 1 0 0 k H z <7)*EH"CSâÆT è ?». tti tilt * — -7'S- 3 l / 7 ? I i i è S : i t t e ' ) , 3 T T L n.fäVU&Wj&tzl t 40V i f i O
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LM131/A,
LM231/A,
LM331/A
100kHz
50ppm/r
10kHz
LM131AK,
LM131H,
LM231AH,
LU231H,
ci LM331
lm331
LM331AH
LM231AH
H06C
IT18S
N06E
1Hz-100kHz
1Hz-11kHz
LM2907
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1sr154-100
Abstract: SR154
Text: 1SR154-100/1SR154-200/1SR154-400 — K /D iodes 1SR15 4 -1 0 0 /1 SR154-200 1SR154-400 ->' a > # * » & » » * if-f * - K Silicon Diffused Junction Rectifying Diodes • irffi \ns[2]/Dimensions Unit : mm) • (P S M )» 2) • Features 1) Sm all surface mount type (PSM ).
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1SR154-100/1SR154-200/1SR154-400
1SR15
SR154-200
1SR154-400
1SR154-100
1SR154-200
1SR154-400
SR154
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1SR139-100
Abstract: FS - K - 1 - 0.95 - A - 40
Text: $ ' 4 '% — 1SR139-100/1SR139-200/1SR139-400/1SR139-600 K /D io d e s 1SR139-100/1SR139-200 1SR139-400/1SR139-600 -> <j =i « a * - f * - k i - * k * -t 7 Silicon Diffused Junction Glass-Sealed Rectifying Diodes (Mold Type) 1SR139-100, 1SR139-200, 1SR139400, 1SR139-600 U,
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R139-100/1SR139-200/1SR139-400/1SR139-600
1SR139-100/1SR139-200
1SR139-400/1SR139-600
1SR139-100,
1SR139-200,
1SR139400,
1SR139-600
00V/400V/600V
1SR139-200
1SR139-100
FS - K - 1 - 0.95 - A - 40
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