Untitled
Abstract: No abstract text available
Text: PD - 96328 AUTOMOTIVE GRADE AUIRG7CH73K10B • 100% Tested at Probe * Features • • • • • • • • • C Designed for Automotive Application* Solderable Front Metal Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C
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AUIRG7CH73K10B
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Untitled
Abstract: No abstract text available
Text: PD - 97557 AUTOMOTIVE GRADE AUIRG7CH73K6B • 100% Tested at Probe * Features • • • • • • • • • C Designed for Automotive Application* Solderable Front Metal Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C
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AUIRG7CH73K6B
1200Vare
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dual polarity power supply
Abstract: RS Components
Text: Issued March 1984 F3627 31 2 digit LCD digital panel meter / Stocknumber 258-827 The RS 31 2 digit LCD digital panel meter is housed in a very compact front panel mounting case made of matt black flame retardant ABS which is held in the panel by a simple metal clamp. The meter has a 0.5 inch liquid
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F3627
330ppm/
dual polarity power supply
RS Components
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Untitled
Abstract: No abstract text available
Text: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s
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TV162L027S6PV
TV162L027S6PV
11-Mar-11
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death metal diagram
Abstract: No abstract text available
Text: New Product TV210L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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TV210L027S6PV
TV210L027S6PV
11-Mar-11
death metal diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s
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TV180L027S6PV
TV180L027S6PV
11-Mar-11
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PDF
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TVS VISHAY
Abstract: No abstract text available
Text: New Product TV210L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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TV210L027S6PV
TV210L027S6PV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TVS VISHAY
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s
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Original
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TV162L027S6PV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s
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Original
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TV180L027S6PV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV210L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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Original
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TV210L027S6PV
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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TVS VISHAY
Abstract: No abstract text available
Text: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s
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Original
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TV180L027S6PV
TV180L027S6PV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TVS VISHAY
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PDF
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TV060B8P2S4PT
Abstract: TV060B9P1S4PT TV060B
Text: New Product TV060B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 60 mils x 60 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 400 W peak pulse power capability with a 10/1000 s
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TV060B.
013hay
11-Mar-11
TV060B8P2S4PT
TV060B9P1S4PT
TV060B
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PDF
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TVS VISHAY
Abstract: No abstract text available
Text: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s
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Original
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TV162L027S6PV
TV162L027S6PV
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TVS VISHAY
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PDF
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bi-directional switches FET
Abstract: bare Die mosfet Bi-Directional P-Channel mosfet R-THETA Bi-Directional P-Channel list of P channel power mosfet so8 footprint bare chip mosfet Power MOSFET Wafer
Text: Flip Chip Power MOSFET: A New Wafer Scale Packaging Technique Aram Arzumanyan, Ritu Sodhi, Dan Kinzer, Hazel Schofield, Tim Sammon International Rectifier Corporation, El Segundo, CA 90245 USA As presented at ISPSD, June 2001 Abstract This paper describes the first flip chip power MOSFET
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ISPSD-99
bi-directional switches FET
bare Die mosfet
Bi-Directional P-Channel mosfet
R-THETA
Bi-Directional P-Channel
list of P channel power mosfet
so8 footprint
bare chip mosfet
Power MOSFET Wafer
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TVS VISHAY
Abstract: No abstract text available
Text: New Product TV060B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 60 mils x 60 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 400 W peak pulse power capability with a 10/1000 s
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TV060B.
013trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TVS VISHAY
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV180T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 180 mils x 1800 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s
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TV180T.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s
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TV162T.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product TV134T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 134 mils x 134 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3000 W peak pulse power capability with a 10/1000 s
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TV134T.
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product TV070B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 70 mils x 70 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 600 W peak pulse power capability with a 10/1000 s
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TV070B.
013hay
11-Mar-11
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PDF
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TV210T018S4PV
Abstract: No abstract text available
Text: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s
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TV210T.
11-Mar-11
TV210T018S4PV
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TV070B9P1S4PT
Abstract: No abstract text available
Text: New Product TV070B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 70 mils x 70 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 600 W peak pulse power capability with a 10/1000 s
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Original
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TV070B.
013trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TV070B9P1S4PT
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV070B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 70 mils x 70 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 600 W peak pulse power capability with a 10/1000 s
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TV070B.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV180T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 180 mils x 1800 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s
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TV180T.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s
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TV162T.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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