FROM TSOP TYPE II Search Results

Contextual Info: EK621016 64K X 16 Bit CMOS SRAM Features • Access Times 70ns, 100ns • Single 5V ±10% Power Supply • Industry Standard Pin Assignment • Package Options 44 pin TSOP Type II Pin Configuration Description The EK621016 from Eureka is a one-megabit den­

1N914

Abstract: A279308-12 A279308L-12
Contextual Info: A279308 Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark Initial issue June 17, 1998 Preliminary Change CE from VIL to VIH during program verify mode Change 32-pin SOP package type to 32-pin TSOP type I

Contextual Info: ISSI PACKAGING INFORMATION Plastic TSOP Package Code: T Type II N N/2+1 E1 E 1 Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the

1N914

Abstract: A279308L-55 A279308V-55
Contextual Info: A279308 Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. 0.0 History Issue Date Remark Preliminary Initial issue June 17, 1998 1.0 Change CE from VIL to VIH during program verify mode Change 32-pin SOP package type to 32-pin TSOP type I

IC51-0242-1006-1

Abstract: TSOP 44 socket IC51-0482-2018 TSOP 48 socket ic 4008 0262 IC51-0322-1207-1 IC51-0282-1032-1 IC51-0322-1031-1 IC51-0322-1219
Contextual Info: IC51 - Clamshell Thin Small Outline Package TSOP Type I and II Part Number (Details) Specifications 1,000M Ω min. at 500V DC Insulation Resistance: Dielectric Withstanding Voltage: 700V AC for 1 minute 30m Ω max. at 10mA/20mV max. Contact Resistance:

PK131

Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

IS61C1024

Contextual Info: I S 6 1 C 1 I S 6 1 C 1 2 2 4 4 ISSI L 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 m W typical • Low standby power: 500 fiW (typical) C M O S standby The IS S IIS61C1024 and IS61C1024L are very high-speed,

ic189-0882-099

Abstract: IC189-0642-007 IC189-0642 IC189 0642 IC189 Series Open Top SOP, SSOP, TSOP Type I a IC189-0642-041 IC189-0642-069
Contextual Info: IC189 Series Open Top SOP, SSOP, TSOP (Type I and II) Part Number (Details) Specifications Insulation Resistance: 1,000M Ω min. at 100V DC, pitch 0.5 1,000M Ω min. at 500V DC, pitch 0.65, 0.8, 1.27 IC189 - 064 2 - 007 * - * Series No. Dielec. Withstd. Voltage: for 1 minute at 100 V AC, pitch 0.5

Contextual Info: ISSI IS 6 2 L V 1 2 8 1 6 L / L L PRELIMINARY INFORMATION OCTOBER 1999 128K x 16 CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70,100 ns The IS S IIS62LV12816L and IS62LV12816LL are high­ speed, 2,097,152-bit static RAMs organized as 131,072

TSOP 1378

Abstract: 62C1024
Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

CY7C1021

Contextual Info: CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ

CY7C1021

Abstract: 107156 MIL-STD-883 method 3015 CY7C1021-15VC
Contextual Info: 021 CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ

CY7C1021

Contextual Info: CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ

107156

Abstract: CY7C1021 7C1021-10
Contextual Info: 021 CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ

Contextual Info: ISST IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM a d v a n c e in fo rm a tio n FEATURES DESCRIPTION • High-speed access times: 8, 10,12 and 15 ns The IS S IIS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568

S70G5-65-7KG

Contextual Info: d Mounting pad of TSOP (type II) The nominal dimensions of TSOP (thin small outline package) (type II) are determined by the plastic body width (E). In designing the mounting pads of this package, therefore, the body width (E) and pin dimensions (pin length: L1, length of flat portion of pin: L or length of soldered portion Lp) are important.

W24512AK-15

Contextual Info: W24010 inbond Electronics Corp. -~-l_p-w-e-_I.-I-I-P-IIII-y_ -1_-LI- .-.-mme.-.I_ I_., .-L-.~I-.-I-.III-.-~- -.a-m-m-._-_ 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 x 8 bits that

from TSOP Type II

Contextual Info: Multiadapter - SMD TSOP I/II RE900 - FR4 EPOXY fibre-glass FR4 1.50 mm double-sided 35 µm CU pth - solder and component side with chemical NI/AU surface and solder stop mask - pitch spacings: 0.40 mm (15.7 mil); 0.50 mm (19.7 mil); 0.65 mm (26.5 mil); 0.80 mm (30 mil); 1.27 mm (50 mil)

IC 4407

Abstract: IC235 TSOP 54 socket IC235-0442-207 4407 pin details 4407 TSOP 50 socket IC235-0542-218-2 IC235-0242-202 IC235-0082-236
Contextual Info: IC235 Series Open Top Thin and Small Outline Package (TSOP -Type II / SOP) Part Number (Details) Specifications 1,000M Ω min. at 500V DC 700V AC for 1 minute 30m Ω max. at 10mA/20mV max. –40°C to +150°C 10,000 insertions min. 30g min. per pin at minimum

Contextual Info: ADVANCE MT28 S F116 2 MEG x 8 FLASH MEMORY I^ IIC R O N 2 MEG x 8 5V/5V AND 3 V S m a r t V o l t a g e , SECTORED ERASE FEATURES • • • • • • • • • Thirty-two 64KB erase blocks Programmable sector lock Deep Power-Down Mode: 5p.A MAX 5V/5V operation (MT28F116 only):

IC51-0162-150

Abstract: IC51-0082-763 IC51-0242-1341 IC51-0562-1514 IC53-0642-911 IC51-0202-779 IC51-0322-667 IC51-0382-2036 IC51-0482-2018 IC51-0562-2144
Contextual Info: Series Overview *SOP Small Outline Packages, Gullwing Leads SMT Devices *SOP variations e.g. TSSOP. Series IC51 (Clamshell) SOP, TSOP Type I & II 0.4 to 1.27mm Pitch Part Number (Details) Specifications Insulation Resistance: 1,000MΩ min. at 500V DC Dielectric Withstanding Voltage: 700V AC for 1 minute

CY7C1021

Contextual Info: 1CY 7C10 21 PRELIMINARY CY7C1021 64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW max. • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ

IS61C1024

Abstract: IS61C1024-20M
Contextual Info: IS61C1024 IS61C1024L 128K x ISSI 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S IIS61C 1024 and IS 61C 1024L are very high-speed, low power, 131,072-w ord by 8-bit CM O S static RAMs. T hey

Contextual Info: issr IS61C5128 512K x 8 HIGH-SPEED CMOS STATIC RAM FEBRUARY 1999 FEATURES DESCRIPTION • High-speed access times: 10,12 and 15 ns The IS S IIS61C5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61C5128 is fabricated using IS S I's high-performance CMOS tech­