FREQUENCY Search Results

2sc2824

Abstract: 2SA1184
Contextual Info: TOSHIBA íDISCRETE/OPTOJ Ib DE I TDTTESD a007Etob M |~~ Y ' 9097250 T O SH IB A DISCRETE/ OP TO 56C 07266 ' D JT- 3 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S 2 A 1 1 8 4 Unit in mra AUDIO FREQUENCY POWER A M P L I F I E R APPLICATION S. 7.9 MAX. ^3.1d-Ql5

i486

Contextual Info: SN74BCT2141 2-WAY 8K x 18 SYNCHRONOUS CACHE DATA RAM D3613. A UG UST 1990 2-Way 8K x 18 Bit Architecture FN PACKAGE TOP VIEW Synchronous Read and Write Access at 50 MHz Clock Frequency Incorporates Burst Counter for Burst-Read (Read-Hit) Cycles or Burst-Write (Line-Fill)

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

Contextual Info: DIRECTIONAL COUPLER .19 MAX IRAK MICROWAVE DIRECTIONAL COUPLER CPL / 1 0 B E - 0 8 SPECIFICATIONS: FREQUENCY LOSS COUPLING VSWR DIRECTIVITY POWER IN O- -O OUT TR4K MICROWAVE MATERIAL □ STANDARD □ SPECIAL • » o • BASE COVER MARKING FINISH FR— 4 VECTRA

F2040

Contextual Info: TRF2040 FRACTIONAL-N/INTEGER-N SYNTHESIZER CIRCUIT S L W S 0 2 2 -J U N E 1996 Fractional-N/lnteger-N High-Frequency 0.7-2.2 GHz Synthesizer for Radio Frequency (RF) Channel • PW PACKAGE (TOP VIEW)

TMPZ84C011

Abstract: TMPZ84C015BF6 TMPZ84C015BF-6 TMPZ84C011B TMPZ84C011BF-6 TMPZ84C011BF TMPZ84C011BF6 TMPZ84C015BF TMPZ84C810AF-6 TRD-100
Contextual Info: 8-Bit Microprocessor & Peripheral LSI TLCS-85 Family NMOS X44 Type No. Min. Inst. Execu­ tion time (ms) Function Max Supply Current (mA) Frequency (MHz) No. of Pins TMP8085AP-2 Microprocessor 0.8 170 5 40 ♦TMP8085AHP-2 Microprocessor 0.8 135 5 40 Notes) Postfix P: Plastic standard DIP (DIP), * : Supply voltage: 4.5-5.5V; Supply voltage: 4.75-5.25V, Operating temperature: 0~70”C

TIS69

Abstract: TIS70 tis70 texas instruments
Contextual Info: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit

Contextual Info: TCM29C23, TCM129C23 VARIABLE-FREQUENCY PCM OR DSP INTERFACE S C T S 0 2 9 A -A U G U S T 1989 -R E V IS E D JULY 1996 • Combined ADC, DAC, and Filters • Extended Variable Frequency Operation - Master Clock Up to 4.096 MHz - Sample Rates Up to 16 kHz - Passband Up to 6 kHz

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

2n5549

Contextual Info: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit

amplifier se592

Contextual Info: SE592, NE592, NE592A DIFFERENTIAL VIDEO AMPLIFIERS D2667, FEBRUARY 1 9 8 4 -R E V ISE D FEBRUARY 1988 • 90-MHz Bandwidth NE592, N E592A . . . D O R N P A C K A G E SE592 . . . J P A C K A G E • Adjustable Gain to 400 TOP VIEW • No Frequency Compensation Required

Contextual Info: TRKMS037 *T R K M S 0 3 7 * l/Q - .0 2 5 .18 MAX MODULATOR STYLE - 0 9 PACKAGE TRAK MICROWAVE l/Q SPECIFICATIONS MODULATOR LO FREQUENCY LO POWER LEVEL M IQ /3 F F - 0 9 C INSERTION LOSS l/Q l/Q RATE LEVEL 1.8 - 2 .0 GHz + 10 dBm MAX 10 dB MAX DC - 10 MHz

2500VRM

Contextual Info: GaAs IRED S PHOTO-TRANSISTOR 2 6 , 2 7 , 2 8 S H O rt { ¿ IN 2 5 (S h o r t > ) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC /DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR.

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR |-|^ 0 Q Q 0 p U n it in mm T V TU N E R , UHF O S C ILLATO R A P P LIC A T IO N . TV TU N E R , UHF CONVERTER A P P LIC A T IO N . • • Including Two Devices in SM6 Super M ini Type with 6Leads H igh T ransition Frequency : f'i' = 4.0GHz (Typ.)

Contextual Info: h- .5 0 -H .2 5 0 r 1 .075 — .19 7 .0 5 5 I F □ □ □ .031 — r Î •lo .38 I HIGH DYNAMIC RANGE DOUBLE BALANCED MIXER h-— -19 MAX —- - T .3 5 1 TRAK MICROWAVE RF MIXER $ M X R /3 C F -0 2 H D SPECIFICATIONS: IF OPERATING FREQUENCY

SN54LS628J

Contextual Info: SN54LS624 THRU SN54LS629, SN74LS624 THRU SN74LS629 VOLTAGE-CONTROLLED OSCILLATORS D 2 5 0 1 , JA N U A R Y 1 9 8 0 - REVISED M AR C H 1 9 9 8 Separate Supply Voltage Pins for Isolation of Frequency Control Inputs and Oscillators from Output Circuitry Highly Stable Operation over Specified

Contextual Info: TLC04/MF4A-50, TLC14/MF4A100 BUTTERWORTH FOURTH-ORDER LOW PASS SWITCHED-CAPACITOR FILTERS D 2 97 0 , NOVEMBER 1 9 8 6 -R E V IS E D NOVEMBER 1988 D OR P PACKAGE Low Clock-to-Cutoff-Frequency Ratio Error T L C 0 4 /M F 4 A -5 0 . . . ± 0 .8 % T L C 1 4 /M F 4 A -1 0 0 . . . ± 1 %

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

TRW mmic

Contextual Info: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for

tc9168n

Abstract: n1082 auto tuning LG VR 22K preset m2603
Contextual Info: ap TOSHIBA-» ’’E L E C T R O N I C "DE i D Ê J ciac17S47 □ 0 1 ñ l h c] 1 T-77-05-05 ÉéffljáfcBMÉjfaMfrÍÍiw “*w¿fí*Sai AM SINGLE CHIP DIGITAL TUNING SYSTEM. . Unit in mm TC9168N is C-MOS LSI developed for radio of PLL frequency synthesizer type digital tuning system.

Contextual Info: u 1J POWER SPLITTER .19 MAX 7 1 TRAK MICROWAVE POWER SPLITTER .3 5 S P L /2 E F - 0 1 / 7 5 SPECIFICATIONS: FREQUENCY LOSS VSWR AMP BALANCE PHASE BALANCE ISOLATION POWER IMPEDANCE 5 0 0 - 2 0 0 0 MHz 0 .8 dB TYP, 2 .0 dB MAX 1.5:1 MAX ± 0 .1 dB TYP, ± 0 .3 dB MAX

TCM2912

Abstract: TCM2912C
Contextual Info: TCM2912C PCM LINE FILTER D2788, SEPTEMBER 1983-REVISED DECEMBER 1987 High-Pass Transmit Filter for Rejection of All Low-Frequency Noise: 16 Hz . 7 0 dB Typical 5 0 Hz . 3 5 dB Typical

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.