Untitled
Abstract: No abstract text available
Text: BAT17 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandUHF Test Freq900M Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)8.0 Maximum Conversion Loss (dB)
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BAT17
Freq900M
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Abstract: No abstract text available
Text: DMK4791 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Bandmm Test Freq90G Frequency Min. (Hz)40G Frequency Max. (Hz)100G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0
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DMK4791
Freq90G
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Abstract: No abstract text available
Text: PG1114 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1114
Freq90MÃ
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Untitled
Abstract: No abstract text available
Text: 2N4262 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)
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2N4262
Freq900M
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Untitled
Abstract: No abstract text available
Text: 2SC2563 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.55 h(FE) Max. Current gain.240
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2SC2563
Freq90M
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Abstract: No abstract text available
Text: PG1113 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1113
Freq90MÃ
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Abstract: No abstract text available
Text: OC304/2 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)32 I(C) Max. (A)50m Absolute Max. Power Diss. (W)110m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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OC304/2
Freq900k
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Abstract: No abstract text available
Text: PG1105 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)170 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1105
Freq90MÃ
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Text: PG1341 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)5.0
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PG1341
Freq90MÃ
req90MÃ
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Abstract: No abstract text available
Text: MPS5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m’ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)15
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MPS5179
Freq900M
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Abstract: No abstract text available
Text: NS1672 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NS1672
Freq90M
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Abstract: No abstract text available
Text: NS1975 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NS1975
Freq90M
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Abstract: No abstract text available
Text: 2SC252 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)
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2SC252
Freq900M
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Abstract: No abstract text available
Text: 2SC2547 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC2547
Freq90M
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Text: FZT855 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)250 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)200 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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FZT855
Freq90MÃ
StyleSOT-223
Code4-179
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Untitled
Abstract: No abstract text available
Text: PG1116 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)150 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1116
Freq90MÃ
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Abstract: No abstract text available
Text: PG1102 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1102
Freq90MÃ
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Abstract: No abstract text available
Text: D10-28B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)17 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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D10-28B
Freq900M
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Abstract: No abstract text available
Text: PG2067 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5
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PG2067
Freq90MÃ
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Abstract: No abstract text available
Text: PG1119 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)0.5
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PG1119
Freq90MÃ
eq90MÃ
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Untitled
Abstract: No abstract text available
Text: PG1101 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1101
Freq90MÃ
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Abstract: No abstract text available
Text: D5-28B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)11 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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D5-28B
Freq900M
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Abstract: No abstract text available
Text: PG1106 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0
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PG1106
Freq90MÃ
eq90MÃ
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Abstract: No abstract text available
Text: E Data S heet w i Digics 800 MHz -1 GHz Receiver MMIC Your G aAs 1C Source RevO FEATURES FUNCTIONAL BLOCK DIAGRAM To External Image Filter Monolithic Down Converter From External image Filter 2.5 dB Noise Figure 20 dB Conversion Gain Single +5V Supply 14 Pin SO IC Package
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OCR Scan
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packaA30
AWR8001
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