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Text: BD136 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SK3267 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: DTS2001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k
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Text: FC140 Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices1 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m P(D) Max. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: MPS750 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0
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Text: 2N1130 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50 h(FE) Max. Current gain.165
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Text: 2SC3142J2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)
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Text: 2SC4918A6 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: 2SC3732M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
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Text: 2SC4987 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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Text: BD140-16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: KSC2758 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)
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Text: PZT651T1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0
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Text: MPS751 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0
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Text: 2N1049A+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m
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Text: 2SC1070 2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)
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Text: 2N1048A+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m
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Text: 2N1129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25â V(BR)CBO (V)25 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200
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Text: MA2043 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)105â V(BR)CBO (V)105 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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Text: 2N1050A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.5 @I(C) (A) (Test Condition)500m
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Text: BD140-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BD136-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: DTS2003 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k
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Text: 2N509 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.
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