Untitled
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Text: PZT2222 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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PZT2222
Freq250M
StyleSOT-223
Code4-179
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Untitled
Abstract: No abstract text available
Text: 2N6989+JANTX Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelY Number of Devices4 Type NPN/PNP V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)800m P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)
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2N6989
Freq250M
StyleTO-116
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Untitled
Abstract: No abstract text available
Text: PN4141 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.
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PN4141
Freq250M
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Untitled
Abstract: No abstract text available
Text: MPS5127 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.
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MPS5127
Freq250M
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Untitled
Abstract: No abstract text available
Text: MPS3642 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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MPS3642
Freq250M
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Untitled
Abstract: No abstract text available
Text: ECG2358 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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ECG2358
Freq250M
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MPS2218
Abstract: No abstract text available
Text: MPS2218 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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MPS2218
Freq250M
StyleTO-92
Code3-12
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Untitled
Abstract: No abstract text available
Text: BCW60FF Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)32è V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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BCW60FF
Freq250M
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Untitled
Abstract: No abstract text available
Text: MPS5134 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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MPS5134
Freq250M
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Untitled
Abstract: No abstract text available
Text: ECG2357 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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ECG2357
Freq250M
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Untitled
Abstract: No abstract text available
Text: HSE218 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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HSE218
Freq250M
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Untitled
Abstract: No abstract text available
Text: MM3906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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MM3906
Freq250M
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Untitled
Abstract: No abstract text available
Text: NTE2359 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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NTE2359
Freq250M
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Untitled
Abstract: No abstract text available
Text: PET3903 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500m÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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PET3903
Freq250M
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Untitled
Abstract: No abstract text available
Text: SST4400 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)35 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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SST4400
Freq250M
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Untitled
Abstract: No abstract text available
Text: BC558P Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.75 h(FE) Max. Current gain.
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BC558P
Freq250M
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Untitled
Abstract: No abstract text available
Text: 2SC3398 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3398
Freq250M
resistor10k
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Untitled
Abstract: No abstract text available
Text: AT402 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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AT402
Freq250M
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Untitled
Abstract: No abstract text available
Text: BC237PA Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.170 h(FE) Max. Current gain.
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BC237PA
Freq250M
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Untitled
Abstract: No abstract text available
Text: 2SC4037 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.
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2SC4037
Freq250M
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Untitled
Abstract: No abstract text available
Text: 2SC4181 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)150m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.8k h(FE) Max. Current gain.
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2SC4181
Freq250M
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Untitled
Abstract: No abstract text available
Text: 2SC3656 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3656
Freq250MÃ
resistor10k
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Untitled
Abstract: No abstract text available
Text: 2SC1675K Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.90 h(FE) Max. Current gain.
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2SC1675K
Freq250M
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Untitled
Abstract: No abstract text available
Text: 2SC3653 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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2SC3653
Freq250MÃ
resistor47k
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