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    CS1711

    Abstract: No abstract text available
    Text: CS1711 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50ã V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)450m Maximum Operating Temp (øC) I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF CS1711 Freq160M

    Untitled

    Abstract: No abstract text available
    Text: 2SD1009 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.450


    Original     		PDF 2SD1009 Freq160M StyleSOT-89

    Untitled

    Abstract: No abstract text available
    Text: FCX704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3k


    Original     		PDF FCX704 Freq160M

    Untitled

    Abstract: No abstract text available
    Text: THC3877 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF THC3877 Freq160M eq160M

    Untitled

    Abstract: No abstract text available
    Text: 2N2466 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)275þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N2466 Freq160M

    Untitled

    Abstract: No abstract text available
    Text: BCX56 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.250


    Original     		PDF BCX56 Freq160M StyleSOT-89 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: BCX55 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160


    Original     		PDF BCX55 Freq160M StyleSOT-89 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: FZT704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3.0k


    Original     		PDF FZT704 Freq160MÃ

    Untitled

    Abstract: No abstract text available
    Text: BCX54 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.250


    Original     		PDF BCX54 Freq160M StyleSOT-89 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: MPS4889 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MPS4889 Freq160M

    2sc49

    Abstract: No abstract text available
    Text: 2SC49 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)120 I(C) Max. (A)300m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC49 Freq160M

    Untitled

    Abstract: No abstract text available
    Text: FZT705 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.3k h(FE) Max. Current gain.30k


    Original     		PDF FZT705 Freq160MÃ

    2SC1909

    Abstract: No abstract text available
    Text: 2SC1909 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)75ã V(BR)CBO (V)75 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.150


    Original     		PDF 2SC1909 Freq160M StyleTO-220AB