FREEWHEELING DIODE 5A Search Results

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT UG8FT AND UG8GT ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Voltage - 300 to 400 Volts Forward Current - 8.0 Amperes TQ-220AS FEATURES ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for freewheeling diode power factor

ESM2012DV

Contextual Info: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

PIC-005

Abstract: RC Snubber Design in EZBuck Circuit RC snubber mosfet design RC snubber diode snubber circuit for mosfet Snubber Design RC snubber AOZ1014 snubber capacitor for low frequency AOZ101x
Contextual Info: Application Note PIC-005 RC Snubber Design in EZBUCK Circuit Zach Zhang, Alpha & Omega Semiconductor, Inc. The AOZ101x EZBuck family IC are peak current-mode controlled step down regulators with integrated high-side P-channel MOSFET. A Schottky diode is used as low-side freewheeling device. It operates from a 4.5V to 16V input voltage range and

siemens TLE-5206

Abstract: smd code book dual transistors SMD transistor code NC diode 5206 smd transistors code book transistor SMD g 28 smd code book transistor smd code book transistors siemens TLE-5206G transistor smd CF
Contextual Info: DC Motor Driver TLE 5206 SPT IC * Features ● ● ● ● ● ● ● Output current ± 4 A peak 5A) I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is

Contextual Info: SKDH146/.-L140 DVXS DVVSR D=VS F= K AHC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AHBTAZ¥PAHC ALCC ABCC X[=5AHBTAB¥PAHC Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AHC AZMC O O .]* *' K AC &-I -.0 AYCN I1J&(;

Contextual Info: SKDH116/.L105 DVXS DVVSR D=VS F= K AAC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AABTAZ¥PACM ALCC ABCC X[=5AABTAB¥PACM Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AAC ]MC O O .^* *' K AC &-I -.0 AYC I1J&(;

Contextual Info: SKDH116/.L140 DVXS DVVSR D=VS F= K AAC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AABTAZ¥PAHC ALCC ABCC X[=5AABTAB¥PAHC Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AAC ]MC O O .^* *' K AC &-I -.0 AYC I1J&(;

Contextual Info: Midi Industrial Relay Type RMI. 4-5 5A Monostable • • • • • • • • • • High switching power Small size 4 poles configuration AC coils 6 to 230VAC DC coils 5 to 110VDC 3750VAC dielectric coil to contacts Standard with LED, Push with arm and Flag

MP6622

Abstract: bipolar power transistor data toshiba transistors equivalent Power MOSFET toshiba Power MOSFET, toshiba toshiba environment policy MP66 toshiba mosfet home Inverter circuit Three-phase inverter
Contextual Info: TOSHIBA Semiconductor Company | Transistors >>>Products SEMICONDUCTOR BULLETIN EYE JANUARY 2005 Vol.150 Data Sheets Bipolar Small-Signal Transistors Small-Signal FETs New MOSFET Module MP66 Series 500V/5A 6-in-1 module Combination Products of Differnet Type Devices

SF5A400

Abstract: rectifier 400V 5A SF5A400H SF5A
Contextual Info: SF5A400H Ultrafast Recovery Rectifier 400V, 5A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode

sf5a600h

Contextual Info: SF5A600H Ultrafast Recovery Rectifier 600V, 5A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode

SF5A400

Contextual Info: SF5A400H Ultrafast Recovery Rectifier 400V, 5A ULTRAFAST RECOVERY RECTIFIERS Features  High volt age and high reliabilit y  Ult rafast reverse recovery t im e  High speed swit ching  Low pow er loss and High efficiency Pin Configuration Pin 1: Cathode

Contextual Info: SF5A600H Ultrafast Recovery Rectifier 600V, 5A ULTRAFAST RECOVERY RECTIFIERS Features  High volt age and high reliabilit y  Ult rafast reverse recovery t im e  High speed swit ching  Low pow er loss and High efficiency Pin Configuration Pin 1: Cathode

A55 DIODE

Abstract: A555 Semikron sk 75
Contextual Info: SK 75 GARL 065 E Absolute Maximum Ratings Symbol Conditions IGBT 23 2%3( $ $+ # - ./ 01        # - ./ 85 09  ; < 9 # - ./ 85 09 #= Values Units 455 6 .5 85 // <45 <<5 2 2 : : ! >5 ? @ </5 0 <5A 4B .54 <A8 : : ! >5 ? @ </5

Contextual Info: SKDH146/.-L105 DVXS DVVSR D=VS F= K AHC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AHBTAZ¥PACM ALCC ABCC X[=5AHBTAB¥PACM Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AHC AZMC O O .]* *' K AC &-I -.0 AYCN I1J&(;

1GA1

Abstract: igbt power module FF 50 R 1200 KL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 6B 5A 120D M H PM 6B 10A 120D M H PM 6B 15A 120D Integrated Power Stage for 460 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0

rectifier diode 6 amp 400 volt

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H P M 7A 15A 60A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) The MHPM7A15A60A module integrates a 3-phase input

R16FFSSTAG

Abstract: R19FFSSPAGRB12 R16FRSSTAG r19F R19FFSSPAGRG12 R16FRNSTAG R19FFSSPAGRR12 EAO conformity R19FFSSPAGRW12
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information R.series Switches and Indicators R.series Contents R.series Description . 3

P channel 600v 30a IGBT

Abstract: step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes
Contextual Info: C-Class Ultra Fast Recovery Diodes for High Speed Switching Applications M.T. Rahimo, S. R. Jones Power Division, Semelab plc., Coventry Road, Lutterworth, Leicestershire, LE17 4JB, United Kingdom. Tel + 44 1455 552505, Fax + 44 1455 552612, E-mail mrahimo@semelab.co.uk

L6386 schematic

Abstract: st l6384 applications AN1263 AN1299 L6384 L6385 L6386 L6387 L638X L6386 application
Contextual Info: AN1299 APPLICATION NOTE L638X TRICKS AND TIPS by Gian Paolo Meloncelli Topics covered: • Devices family • Internal diode structure • How to select Cboot • Parasitic elements in the half bridge topology • How to manage below ground voltage on out pin:

L6386 schematic

Abstract: 4 switch 3 phase inverter L6386 application AN1263 AN1299 L6384 L6385 L6386 L6387 STGW12NB60H
Contextual Info: AN1299 APPLICATION NOTE L638X TRICKS AND TIPS by Gian Paolo Meloncelli Topics covered: • Devices family • Internal diode structure • How to select Cboot • Parasitic elements in the half bridge topology • How to manage below ground voltage on out pin:

Contextual Info: SKiiP 29ANB08V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Chopper -%2  : -%2  0 1.    #    0 )( 56+7 1 # ; 8 4 = Values Units &+ 8)( 59'7 '+ < 8(   - > ?+ $$$ @ 8(+ 1 8)+ 5A97 '+