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    FREE TRANSISTOR Y2 Search Results

    FREE TRANSISTOR Y2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FREE TRANSISTOR Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBFJ310LT1G

    Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
    Text: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage


    Original     		PDF MMBFJ309LT1G, MMBFJ310LT1G OT-23 O-236) MMBFJ309LT1/D MMBFJ310LT1G MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310

    MMBFU310LT1G

    Abstract: MMBFU310
    Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage


    Original     		PDF MMBFU310LT1G OT-23 O-236AB) MMBFU310LT1/D MMBFU310LT1G MMBFU310

    m6c marking code

    Abstract: MMBFU310LT1G M6C sot-23
    Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage


    Original     		PDF MMBFU310LT1G OT-23 O-236AB) MMBFU310LT1/D m6c marking code MMBFU310LT1G M6C sot-23

    Untitled

    Abstract: No abstract text available
    Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage


    Original     		PDF MMBFU310LT1G 236AB) MMBFU310LT1/D

    P35 marking code transistor

    Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
    Text: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DPLS350Y -100mA AEC-Q101 J-STD-020 MILSTD-202, DPLS350Y-13 DS31149 P35 marking code transistor 4600 8 pin ic Marking P35 sot89 marking p35

    SS8550W

    Abstract: Y2 TRANSISTOR transistor Y2 transistor marking y2 sot-323 transistor marking code 15 marking Y2 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550W Pb z Collector Current. IC= 1.5A） z Complementary To SS8550W. z Collector Dissipation: PC=0.2W (TC=25°C Lead-free APPLICATIONS z High Collector Current.


    Original     		PDF SS8550W SS8550W. OT-323 BL/SSSTF062 SS8550W Y2 TRANSISTOR transistor Y2 transistor marking y2 sot-323 transistor marking code 15 marking Y2 transistor

    ss8550

    Abstract: 2SS8550 ss8550 sot-23 SS8550 sot-23 Y2 SS8550 transistor sot23 transistor marking y2 ss8550 Y2 TRANSISTOR Y2 SOT23-3 transistor SS8550 MARKING 01
    Text: SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES Power dissipation 1 Base PCM : 0.3 W Collector Current ICM : - 1.5 A Collector-base voltage


    Original     		PDF SS8550 OT-23 -80mA -100mA -800mA -50mA, 30MHz 01-June-2005 ss8550 2SS8550 ss8550 sot-23 SS8550 sot-23 Y2 SS8550 transistor sot23 transistor marking y2 ss8550 Y2 TRANSISTOR Y2 SOT23-3 transistor SS8550 MARKING 01

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: BC847CDLP BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		PDF BC847CDLP DFN1310H4-6 J-STD-020C MILSTD-202, DS30817

    SS8550 sot-23 Y2

    Abstract: ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: PC=0.3W (TC=25°C Lead-free APPLICATIONS z High Collector Current. SOT-23


    Original     		PDF SS8550 SS8550. OT-23 BL/SSSTC087 SS8550 sot-23 Y2 ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23

    sot23 transistor marking y2

    Abstract: Y2 sot23 y2 sot-23 s9016 transistor S9016 sot23 y2 s9016 transistor datasheet MARKING Y2 sot-23 MARKING 16 transistor sot23 transistor marking y2
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current. IC= 25mA） z Power dissipation.(PC=200mW S9016 Pb Lead-free APPLICATIONS z AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION


    Original     		PDF S9016 200mW) OT-23 BL/SSSTC127 sot23 transistor marking y2 Y2 sot23 y2 sot-23 s9016 transistor S9016 sot23 y2 s9016 transistor datasheet MARKING Y2 sot-23 MARKING 16 transistor sot23 transistor marking y2

    DFN1310H4-6

    Abstract: No abstract text available
    Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package


    Original     		PDF BC847CDLP DFN1310H4-6 J-STD-020C MILSTD-202, DS30817 621-BC847CDLP-7 BC847CDLP-7

    BC847CDLP-7

    Abstract: DFN1310H4-6 BC847CDLP
    Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package


    Original     		PDF BC847CDLP DFN1310H4-6 J-STD-020C MILSTD-202, 0015g DS30817 BC847CDLP-7 DFN1310H4-6 BC847CDLP

    Untitled

    Abstract: No abstract text available
    Text: BC847CDLP N EW PRODU CT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package


    Original     		PDF BC847CDLP DFN1310H4-6 J-STD-020C MILSTD-202, 0015g DS30817

    Untitled

    Abstract: No abstract text available
    Text: 2DA1213O/Y PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant Note 1


    Original     		PDF 2DA1213O/Y OT89-3L J-STD-020 MIL-STD-202, DS31306

    13003D

    Abstract: No abstract text available
    Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode


    Original     		PDF DXT13003DG OT223 J-STD-020 MIL-STD-202, DS37262 13003D

    DCX69

    Abstract: No abstract text available
    Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Note 1


    Original     		PDF DCX69/-16/-25 AEC-Q101 J-STD-020 MIL-STD-202, DS31264 DCX69

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1


    Original     		PDF ZXTP4003G OT223 -100V -150mA, AEC-Q101 J-STD-020 DS35459

    ZXTP

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1


    Original     		PDF ZXTP4003G OT223 -100V -150mA, AEC-Q101 J-STD-020 OT223 ZXTP4003GTA ZXTP

    Untitled

    Abstract: No abstract text available
    Text: 2DD2678 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)


    Original     		PDF 2DD2678 OT89-3L J-STD-020D MIL-STD-202, DS31637

    Untitled

    Abstract: No abstract text available
    Text: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)


    Original     		PDF DPLS350E OT-223 J-STD-020D MIL-STD-202, DS31230

    Untitled

    Abstract: No abstract text available
    Text: DPLS4140E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)


    Original     		PDF DPLS4140E OT-223 J-STD-020D MIL-STD-202, DS31279

    Untitled

    Abstract: No abstract text available
    Text: DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data •  BVCEO > 160V IC = 600mA High Collector Current        Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


    Original     		PDF DXT5551 600mA DXT5401 AEC-Q101 J-STD-020 MIL-STD-202, DS31225

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN10150DZ 150V NPN LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead Free, RoHS Compliant (Note 1)


    Original     		PDF ZXTN10150DZ 150mA, AEC-Q101 OT-89 J-STD-020 DS35096

    Untitled

    Abstract: No abstract text available
    Text: SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead Pb -Free 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A 0.2 W . PCM Power Dissipation (Tamb=25°C)


    Original     		PDF SS8550W OT-323 SC-70) -80mA -50mA 30MHz SS8550W 10-Jun-2011