FREE TRANSISTOR Y2 Search Results

MMBFJ310LT1G

Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Contextual Info: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

MMBFU310LT1G

Abstract: MMBFU310
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

m6c marking code

Abstract: MMBFU310LT1G M6C sot-23
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

P35 marking code transistor

Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
Contextual Info: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)

SS8550W

Abstract: Y2 TRANSISTOR transistor Y2 transistor marking y2 sot-323 transistor marking code 15 marking Y2 transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550W Pb z Collector Current. IC= 1.5A） z Complementary To SS8550W. z Collector Dissipation: PC=0.2W (TC=25°C Lead-free APPLICATIONS z High Collector Current.

ss8550

Abstract: 2SS8550 ss8550 sot-23 SS8550 sot-23 Y2 SS8550 transistor sot23 transistor marking y2 ss8550 Y2 TRANSISTOR Y2 SOT23-3 transistor SS8550 MARKING 01
Contextual Info: SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES Power dissipation 1 Base PCM : 0.3 W Collector Current ICM : - 1.5 A Collector-base voltage

Contextual Info: SPICE MODEL: BC847CDLP BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

SS8550 sot-23 Y2

Abstract: ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: PC=0.3W (TC=25°C Lead-free APPLICATIONS z High Collector Current. SOT-23

sot23 transistor marking y2

Abstract: Y2 sot23 y2 sot-23 s9016 transistor S9016 sot23 y2 s9016 transistor datasheet MARKING Y2 sot-23 MARKING 16 transistor sot23 transistor marking y2
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current. IC= 25mA） z Power dissipation.(PC=200mW S9016 Pb Lead-free APPLICATIONS z AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION

DFN1310H4-6

Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

BC847CDLP-7

Abstract: DFN1310H4-6 BC847CDLP
Contextual Info: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

Contextual Info: BC847CDLP N EW PRODU CT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package

Contextual Info: 2DA1213O/Y PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant Note 1

13003D

Contextual Info: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode

DCX69

Contextual Info: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Note 1

Contextual Info: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1

ZXTP

Contextual Info: A Product Line of Diodes Incorporated ZXTP4003G 100V PNP LED DRIVING TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • BVCEO > -100V Maximum continuous current IC = -1A hFE > 100 @ IC = -150mA, VCE = -0.2V Lead Free, RoHS Compliant Note 1

Contextual Info: 2DD2678 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: DPLS4140E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data •  BVCEO > 160V IC = 600mA High Collector Current        Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

Contextual Info: A Product Line of Diodes Incorporated ZXTN10150DZ 150V NPN LED DRIVING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC cont = 1A Lead Free, RoHS Compliant (Note 1)

Contextual Info: SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead Pb -Free 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A 0.2 W . PCM Power Dissipation (Tamb=25°C)