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    FREE TRANSISTOR E2P Search Results

    FREE TRANSISTOR E2P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FREE TRANSISTOR E2P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NSV40300

    Abstract: P40300 free transistor and ic equivalent data NSS40300MD
    Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G, NSV40300MDR2G NSS40300MD/D NSV40300 P40300 free transistor and ic equivalent data NSS40300MD

    NSS40300MD

    Abstract: No abstract text available
    Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G, NSV40300MDR2G NSS40300MD/D NSS40300MD

    NSS40300MD

    Abstract: NSS40300MDR2G
    Text: NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G NSS40300MD/D NSS40300MD NSS40300MDR2G

    N40301

    Abstract: NSS40301MDR2G
    Text: NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40301MDR2G NSS40301MD/D N40301 NSS40301MDR2G

    NSS40301MDR2G

    Abstract: No abstract text available
    Text: NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40301MDR2G NSS40301MD/D NSS40301MDR2G

    AT17

    Abstract: ATMEL 812 250
    Text: March 1995 Field Sales Guide RF ID ASIC Fact Sheet educating the Atmel sales force since 1992 Key RF ID ASIC Advantages • • • • • High Performance CMOS E2PROM Available Low Voltage 1.8 volt Mixed Voltage (1.8/3.0/5.0 volts) Flexible Design Interfaces


    Original     		PDF

    NSS20201MR6T1G

    Abstract: No abstract text available
    Text: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS20201MR6T1G NSS20201MR6/D NSS20201MR6T1G

    Untitled

    Abstract: No abstract text available
    Text: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS20201MR6T1G NSS20201MR6/D

    Untitled

    Abstract: No abstract text available
    Text: NSS30101LT1G 30 V, 2 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS30101LT1G NSS30101L/D

    NSS30101LT1G

    Abstract: No abstract text available
    Text: NSS30101LT1G 30 V, 2 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS30101LT1G NSS30101L/D NSS30101LT1G

    NSS20300MR6T1G

    Abstract: No abstract text available
    Text: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20300MR6T1G NSS20300MR6/D NSS20300MR6T1G

    NSS20201MR6T1G

    Abstract: No abstract text available
    Text: NSS20201MR6T1G Product Preview 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20201MR6T1G NSS20201MR6/D NSS20201MR6T1G

    NSS40400CF8T1G

    Abstract: No abstract text available
    Text: NSS40400CF8T1G 40 V, 7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS40400CF8T1G NSS40400CF8/D NSS40400CF8T1G

    Untitled

    Abstract: No abstract text available
    Text: NSS12200WT1G 12 V, 2 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS12200WT1G NSS12200W/D

    Untitled

    Abstract: No abstract text available
    Text: NSS60201LT1G 60 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS60201LT1G NSS60201L/D

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS30201MR6T1G, SNSS30201MR6T1G NSS30201MR6/D free transistor and ic equivalent data

    NSS30100LT1G

    Abstract: marking VS4 sot-23
    Text: NSS30100LT1G 30 V, 2 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS30100LT1G NSS30100L/D NSS30100LT1G marking VS4 sot-23

    Untitled

    Abstract: No abstract text available
    Text: NSS30100LT1G 30 V, 2 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS30100LT1G NSS30100L/D

    Untitled

    Abstract: No abstract text available
    Text: NSS12200WT1G 12 V, 3 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS12200WT1G NSS12200W/D

    NSS12200WT1G

    Abstract: No abstract text available
    Text: NSS12200WT1G 12 V, 3 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS12200WT1G NSS12200W/D NSS12200WT1G

    Untitled

    Abstract: No abstract text available
    Text: NSS60201LT1G 60 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS60201LT1G NSS60201L/D

    Untitled

    Abstract: No abstract text available
    Text: NSS30100LT1G 30 V, 2 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS30100LT1G NSS30100L/D

    NSV40201LT1G

    Abstract: NSV40201 NSS40201LT1G
    Text: NSS40201LT1G, NSV40201LT1G 40 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40201LT1G, NSV40201LT1G NSS40201L/D NSV40201 NSS40201LT1G

    Untitled

    Abstract: No abstract text available
    Text: NSS40501UW3, NSV40501UW3 40 V, 5.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40501UW3, NSV40501UW3 NSS40501UW3/D