mutoh ip-220
Abstract: No abstract text available
Text: Database for Properties of Lead-Free Solder Alloys DATABASE FOR PROPERTIES OF LEAD-FREE SOLDER ALLOYS Version 1.0 This database is a joint project of ELFNET and COST 531 Action. COST 531 ACTION ON LEAD-FREE SOLDER ALLOYS EURPEAN LEAD-FREE SOLDERING NETWORK
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kskimm12
RC22717
W0302-019)
mutoh ip-220
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Untitled
Abstract: No abstract text available
Text: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NVD6824NL
AEC-Q101
NVD6824NL/D
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hb1c
Abstract: HOOKM353 UL-1598A UL-1598 Occupancy Sensor LOOPM353 tunnel sensor PPH480U
Text: DuroSiteTM LED High Bay for Industrial & Commercial Applications www.dialight.com 1 DuroSiteTM LED High Bay Features & Benefits w 80% lumen maintenance after 60,000 hours w Up to 79 lm/w w Significant energy savings w Instant on/off w Maintenance free w Mercury free
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277VAC)
50/60Hz
480VAC)
50/60Hz
Catalogs/Illumination/MDEXHBX001
MDEXHBX001
hb1c
HOOKM353
UL-1598A
UL-1598
Occupancy Sensor
LOOPM353
tunnel sensor
PPH480U
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NVD6824
Abstract: No abstract text available
Text: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NVD6824NL
NVD6824NL/D
NVD6824
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NVD5117PL
Abstract: 369C 4800 power mosfet NVD5117PLT4G
Text: NVD5117PL Power MOSFET −60 V, 16 mW, −61 A, Single P−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NVD5117PL
AEC-Q101
NVD5117PL/D
369C
4800 power mosfet
NVD5117PLT4G
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NVD6824NL
Abstract: No abstract text available
Text: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NVD6824NL
AEC-Q101
NVD6824NL/D
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diode a29
Abstract: No abstract text available
Text: NVD5117PL Power MOSFET −60 V, 16 mW, −61 A, Single P−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NVD5117PL
NVD5117PL/D
diode a29
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echelon FT-x2
Abstract: FT-X2 14250R FT-X1 echelon FT-x1 echelon FT-x2 14250r ftx1 14240r 14250R-300 14240R Magnetic ink CEA-709
Text: FTXL 3190 Free Topology Transceiver Models 14260R-800, 14240R, and 14250R-300 Description The FTXL 3190 Free Topology Transceiver is a high-performance free topology transceiver and media access controller for developing high-performance devices based on the LonTalk
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14260R-800,
14240R,
14250R-300
I/CEA-709
003-0441-01a
echelon FT-x2
FT-X2 14250R
FT-X1
echelon FT-x1
echelon FT-x2 14250r
ftx1 14240r
14250R-300
14240R
Magnetic ink
CEA-709
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FT-X1
Abstract: echelon FT-x1 echelon FT-x2 14240R 14250R-300 EN14908 FT-X1 echelon ftx1 14240r EN14908-1 altera manchester
Text: FTXL 3190 Free Topology Transceiver Models 14260R-800, 14240R, and 14250R-300 Description The FTXL 3190 Free Topology Transceiver is a high-performance free topology transceiver and media access controller for developing high-performance devices based on the LonTalk
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14260R-800,
14240R,
14250R-300
ANSI/CEA-709
EN14908
03-0441-01A
FT-X1
echelon FT-x1
echelon FT-x2
14240R
14250R-300
FT-X1 echelon
ftx1 14240r
EN14908-1
altera manchester
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Untitled
Abstract: No abstract text available
Text: NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol
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NDD60N550U1
NDF60N550U1/D
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Untitled
Abstract: No abstract text available
Text: NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol
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NDD60N360U1
NDD60N360U1/D
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Untitled
Abstract: No abstract text available
Text: NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD6820NL
AEC-Q101
NVD6820NL/D
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68-20L
Abstract: No abstract text available
Text: NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD6820NL
NVD6820NL/D
68-20L
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Untitled
Abstract: No abstract text available
Text: NVD5803N Product Preview Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NVD5803N
AEC-Q101
NVD5803N/D
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Untitled
Abstract: No abstract text available
Text: NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NVD5803N
NVD5803N/D
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Untitled
Abstract: No abstract text available
Text: NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD6828NL
AEC-Q101
NVD6828NL/D
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Untitled
Abstract: No abstract text available
Text: NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD6820NL
AEC-Q101
NVD6820NL/D
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Untitled
Abstract: No abstract text available
Text: NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NVD5803N
AEC-Q101
NVD5803N/D
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Untitled
Abstract: No abstract text available
Text: NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD6828NL
NVD6828NL/D
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Untitled
Abstract: No abstract text available
Text: NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD6828NL
AEC-Q101
NVD6828NL/D
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Echelon FTT-10A
Abstract: ftx1 14240r FT-X1 echelon FT-x1 14230R-450 E4S40 ftt-10a echelon FT-x2 14222R-800 14212R-500
Text: FT 3120 and FT 3150 ® Free Topology Smart Transceivers ▼ Combines an ANSI/CEA 709.3-1999 compliant free topology twisted pair transceiver with a Neuron 3120 or Neuron 3150 network processor core ▼ Supports polarity insensitive free topology star, daisy chain,
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40MHz
20MHz
003-0337-01F
Echelon FTT-10A
ftx1 14240r
FT-X1
echelon FT-x1
14230R-450
E4S40
ftt-10a
echelon FT-x2
14222R-800
14212R-500
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Echelon FTT-10A
Abstract: IC A 3120 echelon FT-x1 FT-X1 ftx1 14240r ftt-10a 14230R-450 FT3150 echelon FT-x2 A 3150 ic
Text: FT 3120 and FT 3150 ® Free Topology Smart Transceivers t Combines an ANSI/CEA 709.3-1999 compliant free topology twisted pair transceiver with a Neuron 3120 or Neuron 3150 network processor core t Supports polarity insensitive free topology star, daisy chain,
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40MHz
20MHz
003-0337-01G
Echelon FTT-10A
IC A 3120
echelon FT-x1
FT-X1
ftx1 14240r
ftt-10a
14230R-450
FT3150
echelon FT-x2
A 3150 ic
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NVD5863
Abstract: NVD5863NL
Text: NVD5863NL Power MOSFET 60 V, 7.1 mW, 82 A, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD5863NL
AEC-Q101
82licable
NVD5863NL/D
NVD5863
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Untitled
Abstract: No abstract text available
Text: NVD5865NL Power MOSFET 60 V, 38 A, 16 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NVD5865NL
AEC-Q101
NVD5865NL/D
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