31DF2
Abstract: No abstract text available
Text: Type: FRD 31DF2 FEATURES OUTLINE DRAWING * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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31DF2
31DF2
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FRD 31DF2
Abstract: 31DF 31DF2
Text: Type: FRD 31DF2 FEATURES OUTLINE DRAWING * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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31DF2
FRD 31DF2
31DF
31DF2
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31DF2
Abstract: No abstract text available
Text: Type: FRD 31DF2 FEATURES OUTLINE DRAWING * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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31DF2
31DF2
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31DF2 diode
Abstract: 31DF2 FRD 31DF2 31DF2 DATASHEET 31df
Text: Type: FRD 31DF2 FEATURES OUTLINE DRAWING * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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31DF2
20x20x1t
31DF2
31DF2 diode
FRD 31DF2
31DF2 DATASHEET
31df
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Untitled
Abstract: No abstract text available
Text: Type: FRD 31DF2 FEATURES OUTLINE DRAWING * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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31DF2
31DF2
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EIAJ ED-4701 B-121
Abstract: 200V 50A mos fet 1N538 ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317
Text: 목차 다이오드 — 노이즈와 전원 효율 참고 정류 노이즈 3 시리즈 SBD SBD 와 열폭주 1 고속 다이오드란 2 FRD 와 SBD 3 응용 회로와 니혼인터 SBD/FRD 4 역회복 특성 4-1 역회복 특성의 파형 상의 정의 4-2 역회복 특성 측정 회로
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1N538
O-220
O-247
Sn-37Pb
1030s
EIAJ ED-4701 B-121
200V 50A mos fet
ICF-SW77
31DF2
sony icf
FCF10A20
FCH10A15
FSF10A60
LM317
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30DF2
Abstract: 30DF2 01
Text: Type: FRD 30DF2 FEATURES OUTLINE DRAWING * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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30DF2
31DF2
30DF1/30DF2
30DF2
30DF2 01
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30DF2
Abstract: 31DF2
Text: Type: FRD 30DF2 FEATURES OUTLINE DRAWING * Super Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 100 Volts thru 600 Volts Types Available Maximum Ratings Apporox Net Weight:1.19g Rating Repetitive Peak Reverse Voltage
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30DF2
31DF2
30DF2
31DF2
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jointal Z
Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Text: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28
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JIS-C7021
40VDC
jointal Z
5n fast recovery diodes
30DL4 diode
30dl4
F10P20F
circuit SCHEMATIC DIAGRAM SMPS 12v 5A
diode RP 6040
31DF2 diode
f5kq100
smps 8085
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31DF2 diode
Abstract: 31DF2
Text: FRD Type：31DF2 •OUTLINE DRAWING 構造 ：拡散型シリコンダイオード ＦＲＤ リード線型 Construction: Diffusion Type Rectifier Diode Axial Lead Type 用途 ：高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
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Type31DF2
31DF2
31DF2 diode
31DF2
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31DF2 diode
Abstract: 31DF* DIODE
Text: FRD Type：31DF2 •OUTLINE DRAWING 構造 ：拡散型シリコンダイオード ＦＲＤ リード線型 Construction: Diffusion Type Rectifier Diode Axial Lead Type 用途 ：高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
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Type31DF2
31DF2
31DF2 diode
31DF* DIODE
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sony flyback transformer
Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————
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Untitled
Abstract: No abstract text available
Text: 1 目次 はじめに ダイオード— ノイズそして電源の効率—————参考 整流ノイズ————————————————————————– 3シリーズのSBD—————————————————————————
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diode smd ED 74
Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
Text: 目录 二极管—电磁干扰及电源的效率 —————————— 参考 整流杂波 ———————————————— 有3个系列的SBD ——————————————— SBD和热失控 ————————————————
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O-220
O-247
O-247
aSn-37Pb
bSn-37Pb
diode smd ED 74
200v dc 10A buck converter
1N538
30dl4
FRD FCF10A20
12v 50w smps
smps 10w 12V
FRD 31DF2
EIAJ ED-4701 B-121
VFIR
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30V 20A 10KHz power MOSFET
Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
Text: 目录 二极管是功率半导体的基础 1 二极管的构造标记、基本特性 １ 一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 （ 正 向电力损耗 ）加上（ 反 向电力损耗 ） — 使 用PN二极管时我们可以
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AC100/
0QY03
EP10HY03
EP10LA03
EP10QY03
OD-123
200270/W
EP10HA03
30V 20A 10KHz power MOSFET
IGBT 60A spice model
10EDB20
ICF-SW77
smd 1a 100v diode bridge
sbd diode S
2MV10
200v 3A schottky
31DF2
AC100
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31DF2 diode
Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인
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2004/Sept.
AC100/
50/60Hz
DC12V
10kHz
OD-123
100/W
200/W
270/W
300/W
31DF2 diode
mosfet 600V 60A TO-220
MOSFET 50V 100A TO-220
200v 10A mosfet
Diode 31DQ04
200V 200A mosfet
ICF-SW77
IGBT 60A spice model
60v 10KHz ir MOSFET
LM317 spice
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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