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    FRAM I2C Search Results

    FRAM I2C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSP430F2619TZCA Texas Instruments 16 MHz MCU with 128KB FRAM, 8KB SRAM, AES, 12-bit ADC, comparator, DMA, UART/SPI/I2C, timer 113-NFBGA -40 to 105 Visit Texas Instruments
    MSP430F2619TZCAR Texas Instruments 16 MHz MCU with 128KB FRAM, 8KB SRAM, AES, 12-bit ADC, comparator, DMA, UART/SPI/I2C, timer 113-NFBGA -40 to 105 Visit Texas Instruments
    8T49N4811NLGI Renesas Electronics Corporation I2C Programmable Ethernet Clock Generator Visit Renesas Electronics Corporation
    8T49N4811NLGI8 Renesas Electronics Corporation I2C Programmable Ethernet Clock Generator Visit Renesas Electronics Corporation
    1339-2DCGI Renesas Electronics Corporation Real-Time Clock With Serial I2C Interface Visit Renesas Electronics Corporation

    FRAM I2C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB85RC256

    Abstract: MB85RC256VPF-G-JNERE2
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00019-2v0-E FRAM MB85RC256V MB85RC256V is a 256K-bits FRAM with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00019-2v0-E MB85RC256V MB85RC256V 256K-bits MB85RC256 MB85RC256VPF-G-JNERE2

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-6E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13110-6E MB85RC128 MB85RC128 128K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-6E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-6E MB85RC64 MB85RC64 64K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-2E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-2E MB85RC64 MB85RC64 64K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-4E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13110-4E MB85RC128 MB85RC128 128K-bits

    MB85RC16

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00001-3v0-E FRAM MB85RC16 MB85RC16 is a 16K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00001-3v0-E MB85RC16 MB85RC16 16K-bits

    FPT-8P-M02

    Abstract: MB85RC16VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00011-1v0-E FRAM MB85RC16V MB85RC16V is a 16K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00011-1v0-E MB85RC16V MB85RC16V 16K-bits FPT-8P-M02 MB85RC16VPNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-2E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13110-2E MB85RC128 MB85RC128 128K-bits

    MB85RC64PNF-G-JNERE1

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-4E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-4E MB85RC64 MB85RC64 64K-bits MB85RC64PNF-G-JNERE1

    MB85RC64V

    Abstract: MB85RC64VPNFG-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00014-0v01-E FRAM MB85RC64V MB85RC64V is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00014-0v01-E MB85RC64V MB85RC64V 64K-bits MB85RC64VPNFG-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00021-2v0-E MB85RC128A MB85RC128A 128K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00014-3v0-E FRAM MB85RC64V MB85RC64V is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00014-3v0-E MB85RC64V MB85RC64V 64K-bits

    MB85RC1MT

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00029-0v01-E FRAM MB85RC1MT The MB85RC1MT is a 1M bits FRAM LSI with serial interface I2C , using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Since the FRAM is able to write with high-speed operation even though it is a nonvolatile memory, the MB85RC1MT is


    Original     		PDF NP501-00029-0v01-E MB85RC1MT MB85RC1MT

    DS32C35-33

    Abstract: DS32C35 DS32B35-33IND DS32B35 DS32B35-33 DS32C35-33IND JESD97 S-1010A
    Text: Rev 2; 4/08 Accurate I2C RTC with Integrated TCXO/Crystal/FRAM The DS32B35/DS32C35 accurate real-time clocks RTC are clock/calendars that include an integrated temperature-compensated crystal oscillator (TCXO), crystal, and a bank of nonvolatile memory (FRAM) in a


    Original     		PDF DS32B35/DS32C35 300-mil, 20-pin DS32C35-33 DS32C35 DS32B35-33IND DS32B35 DS32B35-33 DS32C35-33IND JESD97 S-1010A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-3v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00019-3v0-E MB85RC64A MB85RC64A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–10E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC128 MB85RC128

    RC256V

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-4v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-4v0-E MB85RC256V MB85RC256V RC256V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-2v0-E Memory FRAM 128 K 16 K  8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00018-2v0-E MB85RC128A MB85RC128A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-1v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00013-1v0-E MB85RC64V MB85RC64V

    MB85RC1MT

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00027-0v01-E Memory FRAM 1M 128 K x 8 Bit I2C MB85RC1MT • DESCRIPTION The MB85RC1MT is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00027-0v01-E MB85RC1MT MB85RC1MT

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-2v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00019-2v0-E MB85RC64A MB85RC64A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC128 MB85RC128

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-0v02-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00013-0v02-E MB85RC64V MB85RC64V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–6E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC128 MB85RC128