HMC313
Abstract: No abstract text available
Text: HMC313 MICROWAVE CORPORATION HBT BROADBAND AMPLIFIER GAIN BLOCK DC - 6.0 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.1100 Features General Description P1dB Output Power: +19 dBm The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that
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HMC313
HMC313
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HMC315
Abstract: No abstract text available
Text: HMC315 MICROWAVE CORPORATION HBT DARLINGTON AMPLIFIER DC - 7.0 GHz V00.1100 FEBRUARY 2001 General Description Saturated Output Power: + 17 dBm The HMC315 is an ultra broadband GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive
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HMC315
HMC315
50-ohm
OC-48ard
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HMC320MS8G
Abstract: No abstract text available
Text: HMC320MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER 5.0 - 6.0 GHz FEBRUARY 2001 V00.0900 Features General Description Selectable Functionality: LNA, Driver, or LO Buffer Amp The HMC320MS8G is a low cost C-band fixed gain Low Noise Amplifier LNA that serves the
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HMC320MS8G
HMC320MS8G
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Untitled
Abstract: No abstract text available
Text: HMC320MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER 5.0 - 6.0 GHz FEBRUARY 2001 V00.0900 Features General Description Selectable Functionality: LNA, Driver, or LO Buffer Amp The HMC320MS8G is a low cost C-band fixed gain Low Noise Amplifier LNA that serves the
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HMC320MS8G
HMC320MS8G
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Untitled
Abstract: No abstract text available
Text: HMC318MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz FEBRUARY 2001 Features General Description LNA with 18 dB Gain Control The HMC318MS8G is a surface mount low cost C-band variable gain low noise amplifier VGLNA that serves the full UNII and HiperLAN
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HMC318MS8G
HMC318MS8G
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HMC261LM1
Abstract: No abstract text available
Text: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true
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HMC261LM1
HMC261LM1
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HMC308
Abstract: No abstract text available
Text: HMC308 MICROWAVE CORPORATION GENERAL PURPOSE 30 mW GaAs AMPLIFIER 1.3 - 3.0 GHz V00.0900 FEBRUARY 2001 General Description P1dB Output Power: + 15 dBm @ +5V The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V Vdd supply. The surface mount SOT26 amplifier
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HMC308
HMC308
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HMC318MS8G
Abstract: No abstract text available
Text: HMC318MS8G MICROWAVE CORPORATION LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz FEBRUARY 2001 Features General Description LNA with 18 dB Gain Control The HMC318MS8G is a surface mount low cost C-band variable gain low noise amplifier VGLNA that serves the full UNII and HiperLAN
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HMC318MS8G
HMC318MS8G
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HMC314
Abstract: No abstract text available
Text: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This
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HMC314
HMC314
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14 Ghz microwave transceiver
Abstract: Bluetooth circuit Rx
Text: HMC310MS8G MICROWAVE CORPORATION BLUETOOTH and 2.4 GHz WLAN TRANSCEIVER FEBRUARY 2001 1 V01.0401 Features General Description Tx Gain: 15 dB, Rx Gain: 13 dB The HMC310MS8G is a multifunction RFIC that incorporates a power amplifier PA and low noise amplifier (LNA) with a transmit/receive
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HMC310MS8G
HMC310MS8G
LMX3162.
14 Ghz microwave transceiver
Bluetooth circuit Rx
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HMC286
Abstract: No abstract text available
Text: HMC286 MICROWAVE CORPORATION LOW NOISE AMPLIFIER 2.3 - 2.5 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.0900 Features General Description 2.4 GHz LNA The HMC286 is a low cost Low Noise Amplifier LNA for 2.3 to 2.5 GHz spread spectrum applications including BLUETOOTH, HomeRF,
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HMC286
HMC286
HMC286mber
HM286
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Untitled
Abstract: No abstract text available
Text: HMC310MS8G MICROWAVE CORPORATION BLUETOOTH and 2.4 GHz WLAN TRANSCEIVER FEBRUARY 2001 1 V00.0900 Features General Description Tx Gain: 15 dB, Rx Gain: 13 dB The HMC310MS8G is a multifunction RFIC that incorporates a power amplifier PA and low noise amplifier (LNA) with a transmit/receive
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HMC310MS8G
HMC310MS8G
LMX3162.
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HMC323
Abstract: No abstract text available
Text: HMC323 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER DC - 3.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC323 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single Vcc supply. The surface
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HMC323
HMC323
50-ohm
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HMC324MS8G
Abstract: No abstract text available
Text: HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that contains two un-connected
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HMC324MS8G
HMC324MS8G
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Untitled
Abstract: No abstract text available
Text: HMC287MS8 MICROWAVE CORPORATION LOW NOISE AMPLIFIER WITH AGC 2.3 - 2.5 GHz FEBRUARY 2001 Features General Description LNA w/ 30 dB Gain Control The HMC287MS8 is a low cost Low Noise Amplifier LNA for spread spectrum applications including BLUETOOTH, HomeRF, 802.11
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HMC287MS8
HMC287MS8
HMC287MS8G
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prescaler 500 mhz
Abstract: No abstract text available
Text: Product Specification PE33241 Product Description UltraCMOS Integer-N PLL Frequency Synthesizer for Low Phase Noise Applications Peregrine’s PE33241 is a high-performance Integer-N PLL capable of frequency synthesis up to 5 GHz. This device is designed for use in industrial and military
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PE33241
PE33241
prescaler 500 mhz
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HMC283LM1
Abstract: 27 - 33 GHz GaAs Tripler MMIC gaas amplifier
Text: HMC283LM1 MICROWAVE CORPORATION SMT MEDIUM POWER GaAs AMPLIFIER 17 - 40 GHz V02.1100 FEBRUARY 2001 General Description SMT mmWAVE PACKAGE The HMC283LM1 is a Medium Power Amplifier MPA in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband
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HMC283LM1
HMC283LM1
310mA
27 - 33 GHz GaAs Tripler MMIC
gaas amplifier
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HMC268LM1
Abstract: No abstract text available
Text: HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1
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HMC268LM1
HMC268LM1
HMC268=
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RPACK 10k x 9
Abstract: Zener diode smd marking code C24 LV142MLN R22D control PDU board PCB DIODE smd marking R14 j35 SMD Marking Code J502-ND Zener diode smd marking code S3 CAP-0603 dni
Text: 5 4 3 2 1 +3_3V +3_3V J2 1 2 +3_3V TP9 R12-F R12-G R12-H 220 220 220 220 9 +3_3V 10 1 2 3 4 5 6 7 8 6 5 4 3 2 1 44 43 42 41 40 16 15 14 13 12 11 10 9 DATA 6 CLK 5 XX 4 E_WR 3 ENH 2 X 1 2 7 6 4 5 1 3 TP3 1 TP1 220 11 C30 R24 51 22pF 220 12 C45 R20 F_IN 1 220
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R12-G
R12-H
R10-B
R10-C
100pF
R10-D
PE97042
AD797
96GHz-3
20MHz
RPACK 10k x 9
Zener diode smd marking code C24
LV142MLN
R22D
control PDU board PCB
DIODE smd marking R14
j35 SMD Marking Code
J502-ND
Zener diode smd marking code S3
CAP-0603 dni
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Untitled
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-190+ DC to 190 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size
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LFCN-190+
-55oC
100oC
FV1206
2002/95/EC)
RO4350B
M112848
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Untitled
Abstract: No abstract text available
Text: Ceramic LFCN-4400+ LFCN-4400 Low Pass Filter 50Ω DC to 4400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-4400+
LFCN-4400
-55oC
100oC
FV1206
LFCN-4400
2002/95/EC)
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D1019
Abstract: No abstract text available
Text: 1 2 3 REV. 4 DESCRIPTION DRAWN/DHTE CHECK/DATE A NEW RELEASE PER SZECR— D1019 WU 0 1 / 0 3 / 0 1 ’ TOM B REV, PER E C R - a i 145 04-/10/01' Ax1 Stanly a p p r d v ed / date 01/15/01' R O G ER 01/1 E / o r MAX 04-/11/01* A B B 'S C iaPACONr Fr-rH I y J~h—r
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D1019
ECR-Q1145
MNA20
Q1/16/01'
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MPN3401
Abstract: Nytronics WEE MC12060 MSD7000 motorola msd7000 diode array MC12061 AN756 crystal diode AN-756 MCI2061
Text: AN-151 Application Note CRYSTAL SWITCHING METHODS FOR MC12060/MC12061 OSCILLATORS Prepared by John Hatchett Roger Janikowski A pplications Engineering This report discusses methods o f using diodes to select series resonant crystals electronically. C ircu it designs
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AN-756
MC12060/MC12061
MC12060
MC12061
EB-59
EB-60.
MSD7000
MC12060
MPN3401
Nytronics WEE
MSD7000
motorola msd7000 diode array
AN756
crystal diode
AN-756
MCI2061
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PRO PRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC. PRELIMINARY S C H E M A T IC PH Y E L E C T R IC A L RJ 2 o— CHI TCT1 CHI 23 TX1+
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S55810G
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