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    FR DIODE 205 Search Results

    FR DIODE 205 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FR DIODE 205 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC237

    Abstract: MMBV2107 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    BAV74LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MMBV2107 BCY72 PDF

    marking code 5a sot-363

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    MMBD6050LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 marking code 5a sot-363 BC237 PDF

    BC237

    Abstract: SOT-363 marking jf sot363 marking qs
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C


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    BAL99LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 SOT-363 marking jf sot363 marking qs PDF

    YM 1021

    Abstract: marking code 2478 zener diode D3Z12BF Zener Diode LF marking zener DIODE MARKING code GM D3Z10BF
    Text: D3Z2V4BF – D3Z36BF 0.4W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • 400mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant Note 1


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    D3Z36BF 400mW OD323F J-STD-020 MIL-STD-202, DS35437 YM 1021 marking code 2478 zener diode D3Z12BF Zener Diode LF marking zener DIODE MARKING code GM D3Z10BF PDF

    D3Z10BF

    Abstract: No abstract text available
    Text: D3Z2V4BF – D3Z36BF 0.4W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • 400mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


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    D3Z36BF 400mW OD323F J-STD-020 MIL-STD-202, DS35437 D3Z10BF PDF

    D3Z10BF

    Abstract: No abstract text available
    Text: D3Z2V4BF – D3Z36BF 0.4W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • 400mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


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    D3Z36BF 400mW OD323F J-STD-020 MIL-STD-202, OD323F DS35437 D3Z10BF PDF

    BC237

    Abstract: A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    BAS16LT1 236AB) M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode PDF

    zener DIODE MARKING code GM

    Abstract: No abstract text available
    Text: D3Z2V4BF – D3Z36BF 0.4W SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • 400mW Power Dissipation on FR-4 PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


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    D3Z36BF 400mW OD323F J-STD-020 MIL-STD-202, OD323F DS35437 zener DIODE MARKING code GM PDF

    BC237

    Abstract: MPS9
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    BAW56WT1 70/SOT MA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS9 PDF

    motorola 5118 user manual

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    MMBD2837LT1 MMBD2838LT1 MMBD2838LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola 5118 user manual BC237 PDF

    FBT-00

    Abstract: D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413
    Text: Pi Factors Report Page 1 of 62 SortBy: PartType/PN/RefDes Date: 1/9/2006 11:20 AM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Your Company Name Here DOC: LZSA500_P1.CIR RECORDS: 316 DESCRIPTION: LZSA500 ENV: GB TEMP: 40.00 C CF: 1.00000


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    LZSA500 LZSA500 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 FBT-00 D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413 PDF

    130001 power transistor

    Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
    Text: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial


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    LZSA1000 LZSA1000 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 130001 power transistor fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400 PDF

    PSD300-200

    Abstract: Power Snubber Diode
    Text: SIYU R PSD300-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PSD300-200 DO15L PSD300-200 Power Snubber Diode PDF

    PSD200-200

    Abstract: Power Snubber Diode
    Text: SIYU R PSD200-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化,高可靠性 Miniaturization,High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage


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    PSD200-200 PSD200-200 Power Snubber Diode PDF

    SWITCHPLEXER

    Abstract: DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36
    Text: This is the PDF file of catalog No.K09E-5. No.K09E5.pdf 00.1.31 Murata Products for Mobile Communications GSM DCS1800 E-TACS DECT CT-2 W-CDMA ISM2400 PCS IS136 AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 ISM2400 PDC800 J-CDMA ISM2400 GSM CDMA PHS E-TACS AMPS DECT


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    K09E-5. K09E5 DCS1800 ISM2400 IS136) CDMA800 ISM900 PDC800 SWITCHPLEXER DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36 PDF

    L2860

    Abstract: No abstract text available
    Text: Prelim inary Data Sheet 0M120L60SB OMIOOF6OSB OM90L120SB 0M7QF120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 150 A m p IG BT s With FR E D Diodes FEATURES • • • • • • • Includes Internal FRED Diode


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    0M120L60SB OM90L120SB 0M7QF120SB MIL-S-19500, 100F60SB 70F120SB L2860 PDF

    X10391

    Abstract: No abstract text available
    Text: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available


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    IL-STD-750 X10391 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD74LVC534 Octal D-type Flip Flops with 3-state Outputs HITACHI ADE-205-071B Z Rev.2 September 1995 Description The HD74LVC534 has eight edge trigger D type flip flops with three state outputs in a 20 pin package. Data at the D inputs meeting set up reguirements, are transferred to the Q outputs on positive going


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    HD74LVC534 ADE-205-071B HD74LVC534 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD74LVC533 Octal D-type Transparent Latches with 3-state Outputs HITACHI ADE-205-070B Z Rev.2 September 1995 Description The HD74LVC533 has eight D type latches with three state outputs in a 20 pin package. When the latch enable input is high, the Q outputs will follow the D inputs. When the latch enable goes low, data at the


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    HD74LVC533 ADE-205-070B HD74LVC533 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD74LVC534 Octal D-type Flip Flops with 3-state Outputs HITACHI ADE-205-071B Z Rev.2 September 1995 Description The HD74LVC534 has eight edge trigger D type flip flops with three state outputs in a 20 pin package. Data at the D inputs meeting set up reguirements, are transferred to the Q outputs on positive going


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    HD74LVC534 ADE-205-071B PDF

    BG0847

    Abstract: fr diode 205 fr 608 diode diode laser 1310 fiber monomode 4 PIN 5v7 diode BGE847BO optical fibre fm receiver 72125
    Text: Philips S em ico n d uctors P relim inary sp ecification Optical receiver module BG0847 P IN N IN G -S O T115T FEATURES • Improved BGE847BO PIN DESCRIPTION • Excellent linearity 1 monitor current • Extremely low noise up to 870 MHz 2 common • Excellent flatness straight line


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    BG0847 BGE847BO OT115T OT115T BG0847 fr diode 205 fr 608 diode diode laser 1310 fiber monomode 4 PIN 5v7 diode BGE847BO optical fibre fm receiver 72125 PDF

    Untitled

    Abstract: No abstract text available
    Text: 47E D • SIEM EN S A235bGS 0034130 SIEMENS AKTIENGESELLSCHAF Infrared Signal Receiver 4 ■ SIE6 TDA 4065 Preliminary Data Bipolar 1C Features • • • • • • High input sensitivity Improved com pensation for extraneous light in range of normal indoor illuminance


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    A235bGS Q67000-A8246 4065-X 67000-A8247 fl235b05 PDF

    TIP 40c transistor

    Abstract: TIP 133 transistor transistor TIP 320 QPD1223 transistor 813 Lf transistor tip 25c transistor tip 40c
    Text: En PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS .205 5.21 .185 (4.70) .205 (5.21) .185 (4.70) R EFEREN CE SU RFACE R EFEREN CE SU RFACE .800 (20.3) MIN C O L LE C T O R -.1 0 0 (2.54) NOM .025 (.640) .015 (.380) S Q NOM 2 PLCS .015 (.380)


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    QPD1223 ST2169 QPD1223 TIP 40c transistor TIP 133 transistor transistor TIP 320 transistor 813 Lf transistor tip 25c transistor tip 40c PDF

    2057

    Abstract: siemens im 365
    Text: SIEMENS 3fach-Silizium-Fotodiodenzeile 3-Chip Silicon Photodiode Array KOM 2057 L 7.8 7 -4 6.5 6.3 ^ ¡ - I in m ° LICS'— r in o 0.20 i io fd 7.62m m spacing 7.62 Circuit diagram Plastic Pin flesh X| x 8 7 l 6 5 / m a r k in g 7J J / " 1 2 3 4 5 6 7


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    D066455 2057 siemens im 365 PDF