OPA2048CA
Abstract: 200w transistor amplifier circuit 200w power AB amplifier circuit diagram 300w transistor power amplifier circuit diagram RD13B 2SC372 F2B transistor 200w power amplifier circuit diagram CCDs Charge Coupled Devices equivalent transistor of F2B transistor
Text: This version: Jan. 1998 Previous version: May. 1997 E2P0060-37-X2 ¡ electronic components OPA2048CA IMAGE SENSORS OPA2048CA Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, one-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a two-phase clock pulse,
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E2P0060-37-X2
OPA2048CA
OPA2048CA
048-bit,
RD13BL
DS0026CN
2SC372
200w transistor amplifier circuit
200w power AB amplifier circuit diagram
300w transistor power amplifier circuit diagram
RD13B
2SC372
F2B transistor
200w power amplifier circuit diagram
CCDs Charge Coupled Devices
equivalent transistor of F2B transistor
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BAL99LT1
Abstract: No abstract text available
Text: ON Semiconductort Switching Diode BAL99LT1 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc 3 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300
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BAL99LT1
236AB)
Charac250
BAL99LT1/D
BAL99LT1
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diode fr 107
Abstract: FR-107 diode 107p datasheet fr 107 diode FR 105 A-405 FR101 FR107 fr 1004 diodes
Text: LESHAN RADIO COMPANY, LTD. FR101 thru FR107 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Reverse Voltage 50 to 1000V Forward Current 1.0A * High temperature metallurgically bonded construction
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FR101
FR107
MIL-S-19500
DO-41,
DO-201AD
DO-41
DO-15
26/tape
diode fr 107
FR-107 diode
107p
datasheet fr 107
diode FR 105
A-405
FR107
fr 1004 diodes
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APD 1550 nm
Abstract: NR8500CP-BC NR8500CP-CC NR8500CR-BB NR8500CR-CB NR8500FP-BC NR8500FP-CC NR8500FR-BB NR8500FR-CB outline mx 503
Text: NEC's φ φ50 µ µm InGaAs APD IN COAXIAL PACKAGE NR8500 Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 7 nA NEC's NR8500 series is an InGaAs avalanche photo diode APD coaxial module with optical fiber pigtail. This module is
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NR8500
GI-50
GI-50
UL1581
APD 1550 nm
NR8500CP-BC
NR8500CP-CC
NR8500CR-BB
NR8500CR-CB
NR8500FP-BC
NR8500FP-CC
NR8500FR-BB
NR8500FR-CB
outline mx 503
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DTESD7V0LED02
Abstract: DTESD5V0LED02 DTESD12VLED
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD7V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD7V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD7V0LED02
WBFBP-02C
DTESD7V0LED02
IEC61000-4-2
DTESD3V3LED02
DTESD5V0LED02
DTESD12VLED02
DTESD5V0LED02
DTESD12VLED
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WBFBP-02C
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD3V3LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD3V3LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD3V3LED02
WBFBP-02C
DTESD3V3LED02
IEC61000-4-2
DTESD5V0LED02
DTESD7V0LED02
DTESD12VLED02
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD3V3LED02 WBFBP-02C ESD Protection Diode 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD3V3LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD3V3LED02
WBFBP-02C
DTESD3V3LED02
IEC61000â
DTESD5V0LED02
DTESD7V0LED02
DTESD12VLED02
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD7V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD7V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD7V0LED02
WBFBP-02C
DTESD7V0LED02
IEC61000â
DTESD3V3LED02
DTESD5V0LED02
DTESD12VLED02
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD5V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD5V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD5V0LED02
WBFBP-02C
DTESD5V0LED02
IEC61000â
DTESD3V3LED02
DTESD12VLED02
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD3V3LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD3V3LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD3V3LED02
WBFBP-02C
DTESD3V3LED02
IEC61000â
DTESD5V0LED02
DTESD7V0LED02
DTESD12VLED02
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD12VLED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD12VLED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD12VLED02
WBFBP-02C
DTESD12VLED02
IEC61000â
DTESD3V3LED02
DTESD5V0LED02
DTESD7V0LED02
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MBE3-50
Abstract: MBE301 TOKO 113kn if transformer
Text: INTEGRATED CIRCUITS DATA SHEET TDA5637 Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners Objective specification File under Integrated Circuits, IC02 Philips Semiconductors 1995 Mar 21 Philips Semiconductors Objective specification
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TDA5637
MBE3-50
MBE301
TOKO 113kn if transformer
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD12VLED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD12VLED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD12VLED02
WBFBP-02C
DTESD12VLED02
IEC61000-4-2
DTESD3V3LED02
DTESD5V0LED02
DTESD7V0LED02
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DTESD5V0LED02
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD5V0LED02 WBFBP-02C ESD Protection Diodes 1.0x0.6×0.5 unit: mm DESCRIPTION The DTESD5V0LED02 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,
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WBFBP-02C
DTESD5V0LED02
WBFBP-02C
DTESD5V0LED02
IEC61000-4-2
DTESD3V3LED02
DTESD7V0LED02
DTESD12VLED02
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diode fr 107
Abstract: fr 107 diode nkt ceramic
Text: Texas Instruments TGD0600 Series GaAs Schottky-Barrier Mixer Diodes Features • Broadband performance from VHF to 100 GHz ■ Less than 7-dB conversion loss from 32 to 90 GHz ■ Rugged, Symmetrical, Hermetic Package Description The Texas Instruments TGD0600 Series
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TGD0600
MIL-STD-202,
packaD0624
TGD0683
TGD0653,
diode fr 107
fr 107 diode
nkt ceramic
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FR152
Abstract: FR153 FR154 FR155 FR156 FR157 FR201 FR202 FR203 FR204
Text: RECTIFIER DIODES, Fast Recovery, Plastic Package S t P a rt Number M axim um A v e ra g e Rectified Current at T, (A m p s i i i i i FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 FR201 FR202 FR 203 FR 204 FR 205 FR206 FR207 FR301 FR302 FR303 FR304 FR305
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FR151
FR152
FR153
FR154
FR155
FR156
FR157
FR201
FR202
FR203
FR157
FR204
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zener diode ST 4148
Abstract: Zener Diode 4148 zener T 4148 FR-107 diode ZENER diode t 4148 zener diode 4148 circuit diagram 1n 4148 zener diode diode st 4148 diode 4937 T 4148 zener
Text: KA7524 LINEAR INTEGRATED CIRCUIT a dip POWER FACTOR CONTROLLER The K A 7 5 2 4 provides the necessary features to im plem ent the E lectronic BALLAST control and S.M.P.S app licatio n for d e s ig n ing on active pow e r fa cto r co rrectio n circuit. FEATURES
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KA7524
500mA
A7524D
27ohm
330ohm
75ohm
10ohm
4700pF
zener diode ST 4148
Zener Diode 4148
zener T 4148
FR-107 diode
ZENER diode t 4148
zener diode 4148 circuit diagram
1n 4148 zener diode
diode st 4148
diode 4937
T 4148 zener
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Untitled
Abstract: No abstract text available
Text: FEATURES gl • 3 0 0 - 1000 MHz MODEL-NO. DA0769 w Ef ■ 3.4 dB Insertion Loss ■ 200 nSec Switching Speed PIN Diode 5 Section Attenuator ■ TTL Control ■ 24 Pin Surface Mount Package 5 BIT RF IN/OUT 24 1 +5V G ND • GND 23 2 GND 22 21 3 4 GND GND 20
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DA0769
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 17.7A/100~200V/trr:35ns« C16P10FR C16P20FR FEATURES 15.91.626 . 3.61142) 15-3 .60ä> ^ 3.4(.134)D1A •Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) 20.3(.800) 1Ô.7(!?Ÿ5> 4.3C.169) I 3.7(.145)
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A/100
00V/trr
C16P10FR
C16P20FR
O-247AC
2C087W
C16P--F
C16P10F
C16P10FR
C16P20F
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Untitled
Abstract: No abstract text available
Text: Central" BAW100 Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 consists of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This
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BAW100
OT-143
OT-143
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C16P20F
Abstract: C16P20FR C16P10FR T0247AC C16P10F
Text: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr :35nsec FEATURES 5.3 209 4.7U85I , » Similar to T0-247AC (TO-3P) Case 15.91.626) . 3.6U42)r r ~ \S $ .ti S a y 3.4(.134) j 0 Dual Diodes - Cathode Common and Anode Common (Type - R )
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A/100â
00V/trr
35nsec
C16P10F
C16P20F
C16P10FR
C16P20FR
T0-247AC
C16P10F
C16P20FR
T0247AC
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ma4p
Abstract: MA4P7108 MA4P7010 diode KS 1060 - R MA4P4302
Text: HIPAX Series PIN Diodes High Power PIN Diodes MA4P4000, MA4P4300, MA4P7000 MA4P7100, MA4P1200, MA4P1250 Features • High Power Handling • Low Loss, Low Distortion • Voltage Ratings to 1000 Volts • Passivated PIN Chip - Full Face Bonded • Hermetically Sealed
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MA4P4000,
MA4P4300,
MA4P7000
MA4P7100,
MA4P1200,
MA4P1250
A4P7000F,
A4P7100F,
A4P1250
4000F,
ma4p
MA4P7108
MA4P7010
diode KS 1060 - R
MA4P4302
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C16P20FR
Abstract: C16P20F C16P10F C16P10FR
Text: FAST RECOVERY DIODE C16P10F C16P20F C16P10FR C16P20FR 17.7A/100— 200V/trr : 35nsec FEATURES • Similar to TO-247AC TO-3P Case . 15.91.626) . p 15.3Ì.6( ^ I ° Dual Diodes - Cathode Common and Anode Common (Type - R) 3.61142) 3.4C134) 20.3(.800> ld.7<!?5>
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A/100â
00V/trr
35nsec
C16P10F
C16P20F
C16P10FR
C16P20FR
O-247AC
C16P--F
C16P10F
C16P20FR
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S3 DIODE schottky
Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching
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1SS300
1SS301
1SS302
1SS322
1SS357
1SS367
1SS370
1SS372
1SS378
HN1D01FU
S3 DIODE schottky
S4 DIODE schottky
2SA1015
MARK MQ
1S1585
common anode schottky diode
DIODE MARK B
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