FQU3P20 Search Results

FQU3P20 Price and Stock

Filter by Manufacturer


Rochester Electronics LLC FQU3P20TU MOSFET P-CH 200V 2.4A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU3P20TU	Tube			275	1 - 10 - 100 - 1000 $1.09 10000 $1.09	Buy Now
Fairchild Semiconductor Corporation FQU3P20TU 2.4A, 200V, 2.7ohm, P-Channel Power MOSFET, TO-251 '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FQU3P20TU		13,384		1	1 $1.05 10 $1.05 100 $0.987 1000 $0.8925 10000 $0.8925	Buy Now

FQU3P20 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FQU3P20		Fairchild Semiconductor	200 V P-Channel MOSFET		Original	PDF
FQU3P20TU		Fairchild Semiconductor	200V P-Channel QFET		Original	PDF

FQU3P20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FQD3P20 / FQU3P20 April 2000 QFET TM FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD3P20 FQU3P20 -200V, FQU3P20TU O-251 FQU3P20
Untitled Abstract: No abstract text available Text: QFET P-CHANNEL FQD3P20, FQU3P20 FEATURES BVDSS = −200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ.	Original	PDF	FQD3P20, FQU3P20 -200V FQD3P20
FQD3P20 Abstract: FQU3P20 Text: FQD3P20 / FQU3P20 April 2000 QFET TM FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD3P20 FQU3P20 -200V, FQU3P20
Untitled Abstract: No abstract text available Text: FQD3P20 / FQU3P20 April 2000 QFET TM FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD3P20 FQU3P20 -200V, FQD3P20TF FQD3P20TM O-252
FQD7P20 Abstract: No abstract text available Text: QFET P-CHANNEL FQD7P20, FQU7P20 FEATURES BVDSS = −200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 19nC Typ.	Original	PDF	FQD7P20, FQU7P20 -200V FQD3P20 FQU3P20 FQD7P20
FQPF*7N65C APPLICATIONS Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	PDF	UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
IRFU210A Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031	Original	PDF	O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
SSP6N60A Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	PDF	SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
fairchild mosfet selection guide Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60 Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics	Original	PDF	Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
thermistor KSD201 Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	PDF	TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd