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    onsemi FQPF12N60CT

    MOSFET N-CH 600V 12A TO220F
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    Fairchild Semiconductor Corporation FQPF12N60CT

    POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 600V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
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    Quest Components FQPF12N60CT 44
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    FQPF12N60CT Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQPF12N60CT Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
    FQPF12N60CT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO-220F Original PDF
    FQPF12N60CT_NL Fairchild Semiconductor 600V N-Channel MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF12N60CT FQPF12N60CT

    FQPF

    Abstract: fqpf12n60ct ocxt
    Text: QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF12N60CT FQPF12N60CT FQPF ocxt

    fqpf12n60c

    Abstract: FQPF12N60CT POWER MOSFET APPLICATION NOTE
    Text: QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF12N60CT FQPF12N60CT fqpf12n60c POWER MOSFET APPLICATION NOTE

    Untitled

    Abstract: No abstract text available
    Text: FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,


    Original     		PDF FQPF12N60C

    IRF250N

    Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
    Text: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100


    Original     		PDF 2N5881 O-204AA/TO-3 DTS4067 DTS424 O-204AA/TO-3: DTS425 IRF250N ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714

    DAP02ALSZ

    Abstract: fan7320 FAN7320b DAP02A LTA504SG FTBVP5SH50 dap02AL FSQ210 FODB103 FQP9N50C
    Text: Fairchild Disc. P/N 2SC3503FSTU 3885_BC637 6285_BC560C 74LVT16244MTD 74LVT16244MTDX 74LVT16245MTD 74LVT16245MTDX 74LVTH162245MTD 74LVTH162245MTX 74LVTH16244MTD 74LVTH16244MTDX 74LVTH16245MTD 74LVTH16245MTDX 74LVTH16373MTD 74LVTH16373MTDX 74LVTH16374MTD 74LVTH16374MTDX


    Original     		PDF 2SC3503FSTU BC637 BC560C 74LVT16244MTD 74LVT16244MTDX 74LVT16245MTD 74LVT16245MTDX 74LVTH162245MTD 74LVTH162245MTX 74LVTH16244MTD DAP02ALSZ fan7320 FAN7320b DAP02A LTA504SG FTBVP5SH50 dap02AL FSQ210 FODB103 FQP9N50C