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    FQB5N60 Price and Stock

    onsemi FQB5N60CTM-WS

    MOSFET N-CH 600V 4.5A D2PAK
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    DigiKey FQB5N60CTM-WS Cut Tape 760 1
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    FQB5N60CTM-WS Reel
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    Flip Electronics FQB5N60CTM-WS 33,600
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    Rochester Electronics LLC FQB5N60TM

    MOSFET N-CH 600V 5A D2PAK
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    DigiKey FQB5N60TM Bulk 398
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    onsemi FQB5N60CTM

    MOSFET N-CH 600V 4.5A D2PAK
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    DigiKey FQB5N60CTM Reel 800
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    Rochester Electronics LLC FQB5N60CTM

    4.5A, 600V, 2OHM, N CHANNEL , D2
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    DigiKey FQB5N60CTM Bulk 503
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    onsemi FQB5N60CTM_WS

    MOSFET N-CH 600V 4.5A - Tape and Reel (Alt: FQB5N60CTM-WS)
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    Avnet Americas FQB5N60CTM_WS Reel 0 Weeks, 2 Days 1,000
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    FQB5N60 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB5N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQB5N60 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQB5N60C Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQB5N60CTM Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQB5N60CTM-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A Original PDF
    FQB5N60TM Fairchild Semiconductor 600V N-Channel QFET Original PDF

    FQB5N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQB5N60C

    Abstract: FQI5N60C
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C FQI5N60C

    Untitled

    Abstract: No abstract text available
    Text: FQB5N60C / FQI5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB5N60C FQI5N60C FQI5N60C

    FQB5N60

    Abstract: FQI5N60
    Text: FQB5N60 / FQI5N60 April 2000 QFET TM FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60 FQI5N60 FQI5N60

    NS4290

    Abstract: FQB5N60C FQI5N60C
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C NS4290 FQI5N60C

    DATE CODE FAIRCHILD

    Abstract: No abstract text available
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C FQI5N60C FQI5N60CTU DATE CODE FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60C FQI5N60C

    Untitled

    Abstract: No abstract text available
    Text: FQB5N60 / FQI5N60 April 2000 QFET TM FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60 FQI5N60 FQB5N60TM O-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    Original     		PDF FQB5N60, FQI5N60 FQB5N60

    Untitled

    Abstract: No abstract text available
    Text: FQB5N60 / FQI5N60 April 2000 QFET TM FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N60 FQI5N60 FQI5N60TU O-262 FQI5N60

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Text: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


    Original     		PDF ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884

    FSD210 8-pin

    Abstract: dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET
    Text: FSA4157/FSA1156/FSA1157 Industry’s Smallest Low Ohm Switches The FSA4157, FSA1156 and FSA1157 are 1 ohm single pole/double throw analog switches in MicroPakTM packaging that provides an 84% space savings over traditional SOT-23 packaging. These devices feature low On resistance RON


    Original     		PDF FSA4157/FSA1156/FSA1157 FSA4157, FSA1156 FSA1157 OT-23 FSA1156 FSA1157 FSA4157/FSA1156/FSA1157 FIN1215/FIN1216/FIN1217/FIN1218 FSD210 8-pin dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET

    MC0628R

    Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
    Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference


    Original     		PDF SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    FQB5N60

    Abstract: FQI5N60
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V Advanced New Design R D S O N = 2 0 i 2 Avalanche Rugged Technology lD = 5.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 16nC (Typ.)


    OCR Scan     		PDF FQB5N60, FQI5N60 B5N60, D2PAK/TO-263 PAK/TO-263 FQB5N60 FQI5N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    OCR Scan     		PDF FQB5N60, FQI5N60 D2PAK/TO-263 D2PAK/TO-263