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    Fairchild Semiconductor Corporation FQB58N08TM

    80V N-CHANNEL MOSFET Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ; ECCN: EAR99
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    ComSIT USA FQB58N08TM 800
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    Abstract: No abstract text available
    Text: QFET TM FQB58N08 / FQI58N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQB58N08 FQI58N08 FQB58N08TM O-263 PDF