FOR PHOTODIODE CHIPS Search Results

PIN Photodiode 1550nm

Abstract: 1A464 1550nm photodiode 5 Ghz PIN photodiode responsivity 1550nm 1.1 photodiode 1550nm bandwidth photodiode PIN 1550nm bandwidth 1A465 8 pin ic 293
Contextual Info: PRODUCT INFORMATION 1300nm 1A463 1550nm High-Performance PIN This unique PIN Photodiode chip is designed for waveguide-based OEIC OptoElectronic IC transceivers. It is complemented by the 1A464 and 1A465 wavelength-selective PIN Photodiode chips for 1300/1550nm

Contextual Info: PRODUCT INFORMATION uw 1A463 High-Performance RN This unique PIN Photodiode chip is designed for waveguide-based OEIC OptoElectronic IC transceivers. It is com plem ented by the 1A 464 and 1A465 w avelen gth -selective PIN Photodiode chips for 1300/1550nm

Contextual Info: 2014-01-10 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.1 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ

Q62702P0885

Abstract: BPW21
Contextual Info: 2007-04-03 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.0 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ

KIP-M1M

Abstract: InGaas PIN photodiode chip
Contextual Info: Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter Ø1.0mm,Ø2.0mm,Ø3.0mm . It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD

Contextual Info: Six-Element SMD Photodiode Array OPR2101 Features: • • • • • Six-PIN photodiode array High-temperature chip carrier Closely matched responsivity between elements Easily mountable in any configuration Suitable for harsh industrial operating conditions

photodiode encoder

Abstract: motor encoder photodiode array encoder
Contextual Info: Six-Element SMD Photodiode Array OPR2101 Features: • • • • • Six-PIN photodiode array High-temperature chip carrier Closely matched responsivity between elements Easily mountable in any configuration Suitable for harsh industrial operating conditions

diode 1233

Abstract: 650NM photodiode 880NM 1233
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-1233 1. Scope : 1-1 This specification applies to extra high speed PIN silicon photodiode chips. Device No. PD-1233 1-2 High modulation bandwidth >100mhz 1-3 Disign for irda transmission systems requirement. 1-4 Low applied voltage , low junction capacitance , low series resistance.

AW30

Abstract: 0125mm
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-1072 1. Scope : 1-1. This specification applies to extra high speed PIN silicon photodiode chips. Device No. PD-1072 1-2. fast response time 1-3. disign for irda transmission systems requirement. 1-4. low applied voltage , low junction capacitance , low series resistance.

10G APD chip

Abstract: EMCORE APD
Contextual Info: G3072-408, 10G Avalanche Photodiode, Coplanar Bottom Illuminated APD DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-3072-408 10G Avalanche Photodiode, Coplanar Bottom Illuminated Chip is designed for GPON application products. It has high responsivity and low capacitance and is ideally suited for low cost, high-speed

InGaas PIN photodiode chip

Abstract: datasheets for photodiode chips
Contextual Info: Optical Monitoring Photodiode Chip KIP-M25-1 Description KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square. It is recommended for optical data communication and power monitoring. Features Front illuminated planar PIN-PD Low capacitance and low dark current

InGaas PIN photodiode chip

Abstract: for photodiode chips KIP-107-1 pin InGaAs chip 1071 cp
Contextual Info: 1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very

1500-nm

Contextual Info: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD2M-TO The 35PD2M-TO, an InGaAs photodiode with a 2mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed.

photodiode InGaAs NEP

Abstract: photodiode 5mm 35PD5M-TO
Contextual Info: Ultra-Large Area InGaAs p-i-n Photodiode Sheet 1 of 1 35PD5M-TO The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive, designed for applications in high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high

35PD3M-TO

Abstract: InGaAs photodiode TO-46 TO46 InGaas PIN photodiode, 3mm
Contextual Info: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD3M-TO The 35PD3M-TO, an InGaAs photodiode with a 3mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed.

InGaAs photodiode TO-46

Abstract: 1500-nm 35PD1M
Contextual Info: Large Area InGaAs p-i-n Photodiode Sheet 1 of 3 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in high sensitivity instrumentation and sensing. Devices are hermetically sealed.

InGaas PIN photodiode chip

Abstract: for photodiode chips KIP-205-1
Contextual Info: 2.5 Gbps InGaAs PIN Photodiode Chip KIP-205-1 Description KIP-205-1 is InGaAs PIN Photodiode chip with Ø50 um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications

InGaAs photodiode

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD75-C Anadigics #137599119 The 13PD75-C, an InGaAs photodiode with a 75µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD75-C Anadigics #137599119 The 13PD75-C, an InGaAs photodiode with a 75µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very

55um

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-C Anadigics #135599116 The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very

13PD55-S

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor

13PD75-S

Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD75-S The 13PD75-S, an InGaAs photodiode with 75µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small to enable operation