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Abstract: No abstract text available
Text: FLR056XV GaAs F E T and H E M T Chips ELECTRICAL CHARACTERISTI CS Ambient Temperature Ta=25° C Hem Test Conditions Symbol Saturated Drain Current IDSS - 100 - mS -1.0 -2.0 -3.5 V -4 - - V 25 26 - dBm 7.0 8.0 - dB - 29 - % - - 40 °C/W V q s = 3V, Id s = 125mA
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FLR056XV
125mA
18GHz
10pcs.
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Untitled
Abstract: No abstract text available
Text: FLR056XV Füjrrsu GaAs FET and HEMT Chips FEATURES • High Output Power: P-|<jB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: r)adc| = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for
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FLR056XV
FLR056XV
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FLR056XV
Abstract: GaAs FET HEMT Chips
Text: FLR056XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: Tiadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for
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FLR056XV
FLR056XV
GaAs FET HEMT Chips
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FLR024FH
Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D
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FLM7785-8C/D
FLM8596-4C
FLM8596-8C
FLR014FH
FLR014XP
FLC311MG-4
FLS31ME
36dBm,
FLS50
FLR024FH
FLX102MH-12
flx202mh-12
FLS09ME
FLS09
FLR016XP
FLR014FH
FSC10FA
FLR056XV
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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FLC081XP
FLC151XP
FLC301XP
FSX017X
FSX51X
FSX52X
FLX252XV
FLK012XP
FLK022XV*
FLK052XV
FLC301XP
fsx52
FUJITSU MICROWAVE
XP 215
FLK202
FSX51
FLC151
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