FLL55MK
Abstract: FLL55 TH 2267
Text: F|.fjVç-. FLL55MK J L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P-idg = 36.0dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to
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FLL55MK
FLL55MK
FLL55
TH 2267
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FLL55
Abstract: FLL55MK fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook
Text: FLL55MK L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • • • • High Gain: G-|dB = 11 -5clB (TyP) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to
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FLL55MK
FLL55MK
FLL55
fujitsu l-band power fets
fujitsu gaas fet L-band
fujitsu databook
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FLL55
Abstract: 4030p
Text: FLL55MK L-Band Medium & High Power GaAs / /:7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 21.4 w Total Power Dissipation pt Tc = 25°C Storage Temperature
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FLL55MK
FLL55
4030p
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FLL55
Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.
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FLU10XM
FLU17XM
FLU35XM
FLL101ME
FLL171ME
FLL351ME
FLL55MK
FLL120MK
FLL200IB-1*
FLL200IB-2*
FLL55
FLL101ME
FLC253MH-6
FLU10XM
fll300ip-2
flu10
fll171
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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