6968e
Abstract: TF6968E D002P 65a3
Text: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9 P RDS(ON), VGS # 9 P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications
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TF6968E
6968E
FIG10-Maximum
FIG11-
100ms
6968e
TF6968E
D002P
65a3
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AP70T03GH
Abstract: AP70T03GJ 60V 60A TO-252 N-CHANNEL
Text: AP70T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS ON 9mΩ ID G ▼ RoHS Compliant BVDSS 60A S Description Advanced Power MOSFETs from APEC provide the
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AP70T03GH/J-HF
O-252
AP70T03GJ)
O-251
100us
100ms
Fig10.
AP70T03GH
AP70T03GJ
60V 60A TO-252 N-CHANNEL
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Untitled
Abstract: No abstract text available
Text: REV. 0.2 FS6989-DS-02_EN Datasheet FS6989 Single-phase Full-wave Motor Driver NOV 2006 FS6989 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742
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FS6989-DS-02
FS6989
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Untitled
Abstract: No abstract text available
Text: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742
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FS6611-DS-11
FS6611
FS6611
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Untitled
Abstract: No abstract text available
Text: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
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AP70T03AS/P
O-263
AP70T03AP)
O-220
100us
100ms
Fig10.
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09N20H
Abstract: AP09N20H AP09N20J
Text: AP09N20H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics D BVDSS RDS ON ID 200V 380mΩ 8.6A G S Description Advanced Power MOSFETs from APEC provide the designer with
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AP09N20H/J
O-252
AP09N20J)
O-251
O-251
09N20J
09N20H
AP09N20H
AP09N20J
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AP70T03GP
Abstract: AP70T03GS
Text: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the
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AP70T03GS/P
O-263
AP70T03GP)
O-220
100ms
Fig10.
AP70T03GP
AP70T03GS
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Untitled
Abstract: No abstract text available
Text: FS6989 Single-phase Full-wave Motor Driver General Description Pin Configuration The FS6989 is a single-phase full wave brushless DC motor driver IC with the functions for thermal shutdown, lock protection, power polarity reverse protection, hall bias circuit and external PWM speed control. The
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FS6989
FS6989
Fig10
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02N60
Abstract: 02N60J 02N60h 2529V
Text: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Fast Switching Characteristic G ▼ Simple Drive Requirement BVDSS 700V RDS ON 8.8Ω ID 1.4A S
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AP02N60H/J-H
O-252
AP02N60J-H)
O-251
O-251
02N60J
02N60
02N60J
02N60h
2529V
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9936gm
Abstract: AP9936GM-HF
Text: AP9936GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ DC-DC Application ▼ Dual N-channel Device D2 D1 D2 D1 G2 S2 SO-8 S1 30V RDS ON 50mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant BVDSS 5A G1
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AP9936GM-HF
9936GM
9936gm
AP9936GM-HF
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Matsuo Film CAPACITOR
Abstract: 431A 553m 0068PF RCR-2350 c4430
Text: m MATSUO METALLIZED POLY ETHYLENE TEREPHTHALATE FILM CAPACITORS A CAUTIONS •T h is capacitor is suitable for D C circuit. In case of A C circuit use, please refer to our sales departm ent. • T h e sum of peak value of A C and D C voltage should not exceed the
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CI 3060 elsys
Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.
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KS0090
26COM/64SEG
KS0090/90-I
KS0090I
KS0090I
CI 3060 elsys
rs 3060 cj
KS* I2C driver
LCD driver KS
SEG60
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Untitled
Abstract: No abstract text available
Text: SSM0903GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 9mΩ ID 60A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,
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SSM0903GMA
SSM0903GMA
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Untitled
Abstract: No abstract text available
Text: SSM70T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free, RoHS compliant. BV DSS 30V R DS ON 9mΩ ID 60A S DESCRIPTION G D S The SSM70T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited
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SSM70T03GH
O-252
SSM70T03GJ
O-251,
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Untitled
Abstract: No abstract text available
Text: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1
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LC5830K
LC5830K
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TK10203AM9
Abstract: No abstract text available
Text: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10203AM9
GC3-L017A
TK10203AM9/1
HSON3030C-10
600mW*
CM105B105K16K
200mA
TK10203AM9
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CM105B104K25A
Abstract: CT21X5R105K25A TK10202AM9 AP-478
Text: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS
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TK10202AM9
GC3-L008A
HSON3030C-8
200mA)
600mW*
1k200mA
8k150mA
CM105B104K25A
CT21X5R105K25A
TK10202AM9
AP-478
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MUN2216
Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Text: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)
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MUN2211
SC-59
23-Jan-09
FIG32.
FIG33.
FIG34.
SC-59
MUN2216
MUN2212
MUN2213
MUN2214
MUN2215
MUN2230
MUN2231
MUN2232
0425-c
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KHB7D5N60F1
Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
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KHB7D5N60P1/F1/F2
KHB7D0N60P1
Fig15.
Fig16.
Fig17.
KHB7D5N60F1
KHB7D5N60F
KHB7D5N60P1
KHB7D5N60F2
tjc3
D 92 M - 02 DIODE
VDD-300V
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EM78P153SN
Abstract: EM78P153SP EM78P153S EM78P153S* writer
Text: EM78P153S OTP ROM 1. GENERAL DESCRIPTION EM78P153S is an 8-bit microprocessor with low-power and high-speed CMOS technology. It is equipped with a 1024*13-bits Electrical One Time Programmable Read Only Memory OTP-ROM within it. It provides a PROTECTION bit to prevent intrusion of user’s code in the OTP memory as well as 15
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EM78P153S
EM78P153S
13-bits
14-lead
EM78P153SP
EM78P153SN
EM78P153SN
EM78P153SP
EM78P153S* writer
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48V SMPS
Abstract: KMB8D2N60QA
Text: SEMICONDUCTOR KMB8D2N60QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.
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KMB8D2N60QA
100ms
Fig10.
48V SMPS
KMB8D2N60QA
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KHB5D0N50F
Abstract: KHB5D0N50P KHB5D0N50F2
Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB5D0N50P/F/F2
KHB5D0N50P
Fig15.
Fig16.
Fig17.
KHB5D0N50F
KHB5D0N50P
KHB5D0N50F2
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KHB019N20F1
Abstract: KHB019N20F2 KHB019N20P1
Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters
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KHB019N20P1/F1/F2
KHB019N20P1
Fig15.
Fig16.
Fig17.
KHB019N20F1
KHB019N20F2
KHB019N20P1
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KS0075
Abstract: 0B 2262 8 x 8 DOT MATRIX DISPLAY white 8 x 8 DOT MATRIX DISPLAY S6A0075 samsung LCD controller KS0075
Text: S6A0075 100 SEG / 34 COM DRIVER & CONTROLLER FOR DOT MATRIX LCD June. 2000. Ver. 0.0 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express
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S6A0075
S6A0075
KS0075
0B 2262
8 x 8 DOT MATRIX DISPLAY
white 8 x 8 DOT MATRIX DISPLAY
samsung LCD controller KS0075
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