FI6 DIODE Search Results

Contextual Info: DAN 803, DAP 803 200mW . "  Diode arrays Silicon rectifiers arrays Forward Current: 0,1 A Reverse Voltage: 80 to / V Publish Data Features Mechanical Data                   1           !

Contextual Info: DAN 803, DAP 803 200mW . "  Diode arrays Silicon rectifiers arrays Forward Current: 0,1 A Reverse Voltage: 80 to / V Publish Data Features Mechanical Data                   1           !

semikron DAP 803

Abstract: semikron DAn 803 DAP803 DAN803
Contextual Info: DAN 803, DAP 803 200mW . "  Diode arrays Silicon rectifiers arrays Forward Current: 0,1 A Reverse Voltage: 80 to / V Publish Data Features Mechanical Data                   1           !

FI6 diode

Abstract: DAP803 DIODE e5
Contextual Info: DAN 803, DAP 803 200mW . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter "  Diode arrays Silicon rectifiers arrays Forward Current: 0,1 A Reverse Voltage: 80 to / V Publish Data

1450

Abstract: 70HF120
Contextual Info: International IGR Rectifier Part Number Diodes VRRM M I fav @ t C W Q ' f(*V W 50 Hi W 60Hz K o c h e l W (°C/W) Notes Demand Number Outline Key Standard Recovery 70HF120 1200 70 140 1 35 1000 1050 0.45 9 12 20202 70HF140 Ì 400 70 no 1 35 1000 1050 0.45

S726

Abstract: Q5010 IKW30N100T J017 f0762 40N250 30n40
Contextual Info: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution

Contextual Info: WJ6 i l 1993 ^ P 7 2 t1 Ìli HARRIS S E M I C O N D U C T O R Electronic Protection Array for ESD and Overvoltage Protection August 1993 Features Description • ±2A Peak Current Capability The SP720 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits.

Contextual Info: m um * b4E D • 000b?Qb 53Ü «PRX CM600HA-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC OUTLINE OftABING JP tt T.

2sk725 equivalent

Abstract: 2sk725
Contextual Info: 2SK725 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET p S E R j I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■(Applications • Sw itching regulators

6MBI8L-120

Abstract: M604
Contextual Info: 6MBI8L-120 8A IGBT (L SERIES) IG B T M ODULE : Features • ESSS^-i High Speed S w itching • Low Saturation Voltage • (M O S * -M ftfe ) • ft t Voltage Drive Variety of Power Capacity Series •JEJS! A p p lic a tio n s • i — 9 — lE f tf fl -f > ' < — 9

GL348

Abstract: GS324 L348 pin out of 741 IC
Contextual Info: GL348 QUAD OPERATIONAL AMPLIFIER Description Features The G L348 is a true quad 741. It consists of four indepen­ dent high-gain, internally compensated, low-power opera­ tional amplifiers which have been designed to provide functional characteristics identical to those of the familiar

2N08L

Abstract: MTP12N08L 7ROM AN569 2N3904 1N914 221A-04
Contextual Info: Order this data sheet by MTP12N08UD MOTOROLA m SEMICONDUCTOR TECHNICAL DATA I Designerfs I MTPI 2N08L MTP12NIOL Data Sheet Power Field Effect Transistor ,+!. .{,l, .$:,:~,.,\~.G !~,;,I ,:.~,. ‘\.: ?,. ,*,.,.,. .$ ~t. . I N-Channel Enhancement-Mode

Contextual Info: y UCC3912 UNITRODE Programmable Hot Swap Power Manager FEATURES DESCRIPTION Integrated 0.15 ohm Power MOSFET 3V to 8V Operation Digital Programmable Current Limit from 0 to 3A Electronic Circuit Breaker Function 1 aA Icc when Disabled The internal 4 bit DAC allows programming of the fault level current from 0

mmc 4011 E

Abstract: 2SK1593
Contextual Info: MOS M O S Field E ffe c t T ran sisto r 2SK1593 MOS F E T 2SK1593 Ü , N f-^ A -S É S M O S c o & f ] i z j : t *M O S W 5 V IC •? *> r m ^ - c to FE T tcO T , F E T T ”, l i t ^ —9, > m & L W ffi < , X ^ y f y r m i i i m 1.5 ± 0.1 t l T ') i s — , V U / ' f

ba6238an

Contextual Info: BA6238A/B A6238A N BA6239A/BA6239AN BA6238A/BA6238AN BA6239A/BA6239AN 2 & F * K ) R eversible Motor Driver • BA6238A/BA6238AN/BA6239A/BA6239AN l i , f t r t i s BA6238A/BA6239A K 5-r/< i 2 tm r% n 7 7 '> Dimensions (Unit : mm) i 's - jO ic r t o S i - 4 C 0 = l > h P -;U C 'jZ -P 4 'Q v - y -7 A * g B li, C M O S

BA6110

Abstract: T53K 216NO
Contextual Info: BA6110/ BA6110 FS BA6110 BA6110FS w î M w t 'iT 's y Voltage Controlled Operational Amplifier ' BA6110/BA6110FS 14, Dimensions Unit : mm 7 1 -j h l £ l 'ffiffllC 1 1 ? Z 'Z Z < F > T \ (9m ) (V C A ),1 E * l]ffll7 -f (VCF), * E # J « S S « « (VCO) 4'

IC MARKING NS-05

Abstract: smd code Yj 33 5962-8851601LX ST 431c
Contextual Info: AMD n REVISIONS LT R D A T E YR-H0-DA DESCRIPTION APPROVED A A d d e d b u r n - i n c o n d i t i o n C to 4 . 2 . a . l and 4 . 3 .2.b.l. D e v i c e ty p e s 03 an d 04 i n a c t i v e f o r n e w d esign. Not available from an approved source. E ditorial changes throughout.

MC1406L

Abstract: MC1506 MC1723G C1506 MC1506L 20PF 406L MC1539G MC155SG mc1723
Contextual Info: . specifications and Applications Information SIX BIT, MULTIPLYING DIGITAL-TO-ANALOG . . . designed of a six-bit for CONVERTER use where the output word an analog digital and current input is a linear product voltage. CERAMIC PACKAGE CASE 632 TO-116 FIGURE

n37 transistor

Abstract: EL2075 EL4083 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS
Contextual Info: EL4083 CT ODU ENT E PR PLACEM r at T E L E O R S e B D C nte /tsc O NDE port MME ical Sup ersil.com O C E n t h w.in NO R oData r Tec oSheet r ww ct u conta -INTERSIL 1-888 December 1995, Rev. B FN7157 Current Mode Four Quadrant Multiplier Features The EL4083 makes use of an Elantec

h01-h02

Abstract: ccd sony super HAD 2 sony icx ccd sony super HAD IR nm ICX408AK ccd sony super HAD SONY 5003 L177 E ICX058CK LTCM500S
Contextual Info: SONY M ñSm m IC X 4 0 8 A K 1 /3 1 ? N T S C ^ -7 — (l/3ñ) IC X 4 0 8 A K (á N T S C ^ ^ ^ 6 m m ÍJ7- tr T t # ¿ 7 k ü L t z 4 y & y 'i y M c c D iiH fc ítít « n ap I C X 0 5 8 C K ^ ^ L , J&Jg, d u y y, s/n .& X ^ 'T , tíU c o 7 * -;i/K m m * m L 2 F £ t:%

n37 transistor

Abstract: N38 transistor NPN N43 fi-14 current conveyors EL4083 EL4083C EL4083CN N39 transistor QCX0002
Contextual Info: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time

current conveyors

Abstract: 100 N31 transistor 2e17 n37 transistor 100 n37 three pin
Contextual Info: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time

be01a

Abstract: TJA11
Contextual Info: L4C381 16-bit Cascadable ALU D E V IC E S IN C O R P O R A T E D FEATURES □ H igh-Speed 15ns , Low Pow er 16-bit C ascadable ALU □ Im plem ents A dd, Subtract, A ccu­ m ulate, T w o's C om plem ent, Pass, and Logic O perations □ All R egisters H ave a Bypass Path

transistor N43

Abstract: 4083C
Contextual Info: HIGH PERFORMANCE ANALOG iNTEOTATÊDCMCUfTS F eatu res Current Mode Four Quadrant Multiplier G eneral D escrip tion T he 4083C m akes use of an E lantec fully com plim entary oxide isolated bipolar process to produce a p a te n t pending cu rren t in, cu rren t out four q uadrant m ultiplier. In p u t and o u tp u t signal