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    FF 75 R 06 FK 3 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    3KL53

    Abstract: 513KL 5KR11
    Text: ΰp                                                                           3'7$:8 3'7&78 3'7$78 3'7&:8 3066 3066 6&


    Original     		PDF

    SBOA046

    Abstract: tl5001 TL1431CD
    Text: TL1431 PRECISION PROGRAMMABLE REFERENCE SLVS062H – DECEMBER 1991 – REVISED JANUARY 2002 0.4% Initial Voltage Tolerance 0.2-Ω Typical Output Impedance Fast Turnon . . . 500 ns Sink Current Capability . . . 1 mA to 100 mA Low Reference Current REF Adjustable Output Voltage . . . VI(ref) to 36 V


    Original     		TL1431 SLVS062H TL1431, TL1431QLPR TL5001EVM-101 TL5001EVM-102 TL5001EVM-103 SBOA046 tl5001 TL1431CD PDF

    marking code fz

    Abstract: Z1SMA11 Z1SMA12 Z1SMA13 Z1SMA15 Z1SMA16 Z1SMA18 Z1SMA20 Z1SMA10 zener diode marking ES code
    Text: Z1SMA6V2 . Z1SMA240 1.3 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMA/DO-214AC Voltage 6.2 to 240 V Power 1.3 W 5.1 ± 0.3 1.25 ± 0.25 1.25 ± 0.25 • Glass passivated junction • The plastic material carries U/L 94 V-0


    Original     		Z1SMA240 SMA/DO-214AC EIA-RS-481) marking code fz Z1SMA11 Z1SMA12 Z1SMA13 Z1SMA15 Z1SMA16 Z1SMA18 Z1SMA20 Z1SMA10 zener diode marking ES code PDF

    JESD22 METHOD JA-104 aluminum electrolytic capacitor

    Abstract: 1808 footprint IPC Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade) KPS Series, High Voltage, X7R Dielectric, 500 – 630 VDC (Commercial Grade)
    Text: Multilayer Ceramic Capacitors Automotive Grade Ceramic Automotive One world. One KEMET. Multilayer Ceramic Capacitors Automotive Grade Table of Contents Page Why Choose KEMET. 3


    Original     		15bis JESD22 METHOD JA-104 aluminum electrolytic capacitor 1808 footprint IPC Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade) KPS Series, High Voltage, X7R Dielectric, 500 – 630 VDC (Commercial Grade) PDF

    JESD22 METHOD JA-104 aluminum electrolytic capacitor

    Abstract: LB3900 C1206X X5R EC1002 Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
    Text: Multilayer Ceramic Capacitors Automotive Grade Ceramic Automotive One world. One KEMET. Multilayer Ceramic Capacitors Automotive Grade Table of Contents Page Why Choose KEMET. 3


    Original     		15bis JESD22 METHOD JA-104 aluminum electrolytic capacitor LB3900 C1206X X5R EC1002 Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade) PDF

    MSM486DX

    Abstract: MSM486DX100-4 MSM5X86 MSM486DX100-8 8085 microprocessor realtime application theory ami bios 486dx amd 5x86 133mhz AMD 5x86 MSM486DX100-16 5x86-133
    Text: TECHNICAL USER'S MANUAL FOR: PC/104 MSM486DX MSM5X86 N/V Nordstrasse 11/F CH- 4542 Luterbach Tel.: +41 0 32 681 58 00 Fax: +41 (0)32 681 58 01 Email: support@digitallogic.com Homepage: http://www.digitallogic.com DIGITAL-LOGIC AG MSM486DX & MSM5X86 Manual V5.21


    Original     		PC/104 MSM486DX MSM5X86 MSM486DX MSM486DX100-4 MSM486DX100-8 8085 microprocessor realtime application theory ami bios 486dx amd 5x86 133mhz AMD 5x86 MSM486DX100-16 5x86-133 PDF

    LD33

    Abstract: JESD22 METHOD JA-104 aluminum electrolytic capacitor JESD22 Method JA-104 1.5 uf gk 078 vb Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
    Text: Surface Mount Multilayer Ceramic Capacitors Automotive Grade Ceramic Automotive One world. One KEMET. Multilayer Ceramic Capacitors Automotive Grade Table of Contents Page Why Choose KEMET. 3


    Original     		15bis LD33 JESD22 METHOD JA-104 aluminum electrolytic capacitor JESD22 Method JA-104 1.5 uf gk 078 vb Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade) PDF

    TL060CP

    Abstract: TLD62 TL0641N TL060 TL064N TL0621 TL060ACP TL060B TL062CJG TL060BCJG
    Text: TL060, TL060A, TL060B, TL061, TL061A, TL061B TL062, TL062A, TL062B, TL064, TL064A, TL064B LOW-PQWER JFET-INPUT OPERATIONAL AMPLIFIERS D 2 3 9 2 . N O V E M B E R 1 9 7 8 - R E V IS E D N O V E M B E R 1988 • Very Low Power Consumption • Output Short-Circuit Protection


    OCR Scan     		TL060, TL060A, TL060B, TL061, TL061A, TL061B TL062, TL062A, TL062B, TL064, TL060CP TLD62 TL0641N TL060 TL064N TL0621 TL060ACP TL060B TL062CJG TL060BCJG PDF

    rgn 1064

    Abstract: RGN2004 RGN1503 UY1N rgn1064 TFK 19 018 rgn 1883 RGN504 TFK 036 GN2004
    Text: Type y erw. ff V AB 1 i/ fM AX 1 A X 50 , 298 (A 1 /7 7 (V) AB 1 D+D 0.65 200 2 x 0.8 AB 2 D-D 0.65 200 2 x 0 .8 AX 1 ZW A X 50 ZW 3,75 2x500 AZ 1 ZW 1.1 2x500 2x300 AZ 2 ZW 2 2 X 300 AZ 3 ZW 2 2x350 AZ 4 ZW 2,2 8^500 A Z 11 ZW 1.1 2 a 500 2x300 A Z 12 ZW


    OCR Scan     		2x500 2x500 2x300 2x350 2x300 rgn 1064 RGN2004 RGN1503 UY1N rgn1064 TFK 19 018 rgn 1883 RGN504 TFK 036 GN2004 PDF

    2SC4175

    Abstract: M-0262
    Text: > IJ 3 V h =7 > Silicon T ra n sisto r N & P N ¡ 5 m I r ì ' T x & J l ' ì & cf c V ì s 'm V & m □ > . X ' = 7 > i> h f - m y f > W o ' , Ï I mm) ' ' i 7* 1) -y KICffl t L T J r i i l T ' t o 2 .1 ± o . i o ^ ffi'II.f Ini ArfeH t s = 2 0 ns MA X .


    OCR Scan     		2SC4175 2SC4175 M-0262 PDF

    jb 5531

    Abstract: JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A
    Text: 5 P — S 7 • 5^— K SEC m '> « ;□> yxor7 S ilic o n P o w e r T ra n s is to r f * T i\ r x 2SC3567 lif f l h'/-? < 7- 2 S C 3 5 6 7 i i i f F i l Ë l ï i X -i v & y ÿ " m t l- 7 > x x n - , X ^ y f > 7 - u J f i U - i ' , 0 H Ï2 IH Jp - fï : m m


    OCR Scan     		2SC3567iifl5ià 2SA1395 jb 5531 JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A PDF

    2SC3739

    Abstract: 2SA1464 marking 1BW 1BW MARKING 1bws
    Text: SEC j m ^ T i x t n '> 1J =3 > Silicon T ran sisto r A 2SC3739 NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^/FEATUR ES ^ 0 / P A C K A G E DIMENSIONS Unit : mm O f f iJ U ? Æ (i b t i > ), • A 'i "/ - f > 7 , Í & J S ?£ W M t£ ¿ " ) i i & H 4 - 0


    OCR Scan     		2SA1464 2SC3739 marking 1BW 1BW MARKING 1bws PDF

    Untitled

    Abstract: No abstract text available
    Text: SN54F533, SN74F533 OCTAL O-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS D2932, MARCH 1987-REVISED JANUARY 1989 8-Latches in a Single Package SN54F533 J PACKAGE SN 74F533 . . . DW OR N PACKAGE 3-State Bus-Driving Inverting Outputs ITOP VIEW • Full Parallel Access for Loading


    OCR Scan     		SN54F533, SN74F533 D2932, 1987-REVISED 300-mil SN54F533 74F533 74F533 PDF

    THY F 75 A

    Abstract: JK thyristor R702 6R1TI30Y-080
    Text: 6 R 4 y 1 - t î. T I 3 " / $ u Y - 8 a ± / < 9 — : Outline Drawings — + f f l a.5 37. 5 DIODE and TYRISTOR MODULE M ffi- fk • • F e a tu re s Glass Passivation Chip 7 . '< $ " < — '> 3 • Easy Connection • #6$£Jf2 Insulated Type • d i/ d t if t f t # ^ £ l'


    OCR Scan     		6R1TI30Y-080 50/60HZÃ THY F 75 A JK thyristor R702 6R1TI30Y-080 PDF

    D2784

    Abstract: 555i TLC555C TLC555M
    Text: TLC555M, TLC555I, TLC555C LinCMOS TIMERS D2784, SEPTEMBER 1983-REVISED OCTOBER 1988 Very Low Power Consumption . . . 1 mW Typ at V q d • 5 V TLC 555M . . . JG PACKAGE TLC 555I, TLC 555C . . . D OR P PACKAGE TOP VIEW Capable of Operation in Astable Mode


    OCR Scan     		TLC555M, TLC555I, TLC555C D2784, 1983-REVISED D2784 555i TLC555M PDF

    TT 2076

    Abstract: NJM2076 2SA1313 elbh
    Text: NJM2076 • « lit- * MJM207B t i 2 0 » A U * * - # tt* f J t[ l] iS T -r „ E fe f tf is « S I . 0 V T - T O T T ''J ^ C T 7 y ^ , ~ -7 K 7 * -> > ?* ;u BT L / \,r7 — T > y c * * T T 0 ■ 1$ NJM2Q76M HJM2076□ it • B TLESSbI Po = 90mW typ.) •


    OCR Scan     		NJM2076 HJM2Q76D NJM2Q76M MJM2076S 47/iF 100mA, TT 2076 2SA1313 elbh PDF

    HJUB014L

    Abstract: NJU6014 NJU6014L NJU6014V 171A27
    Text: E co * o o c o c o c o c o c n c n w c o nnnnnnnnnn rrnnnnnnnnn I+ * E a #T ^ □ 0fN A ~ I V §B o •fr I 1 K lit 0 -R « •K p K ;DV \ V« P 3K ifó sfê o 1 4 « 4M V +6 0 # m •tt- ni □Ir V> SE" B 15 \ +¿cj i|ng p •H -fc6 'Û Sri m •R * D u JO


    OCR Scan     		NJU6014 NJU6Q14G HJUB014L NJU6014V NJU6014 HJUB014L NJU6014L NJU6014V 171A27 PDF

    LA1861

    Abstract: fm modulation application circuit 107MU 30470 3B DAV LA1861M 3047a 76kh A900-R
    Text: LA1861M No. 304 7 A I F SA\YO M onolithic Linear IC I Car-Use Single-Chip Tuner System J ‘'S., ' / ./V. * V X. , x m* Applications Cor-use IF, noise conceller» m ultiplex # » ' "Ss •^r Functions / / IF amp, peak detector» AF preamp, AFC output, signal m eter, s p f £ ^ m u t m o ^ ^ ^ u f ie r output , noise


    OCR Scan     		LA1861M 60dBp LA1861 fm modulation application circuit 107MU 30470 3B DAV LA1861M 3047a 76kh A900-R PDF

    transistor AFR 16

    Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
    Text: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE


    OCR Scan     		Cycleg50 transistor AFR 16 BAIL4M transistor afr 22 bn1l4m ba1l4m T108 PDF

    2SA1151

    Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF
    Text: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ |V| | |J ^• o 2SC2718 1=> yyui)/ > ?>


    OCR Scan     		2SA1151 2SC2718 2SA1151 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF PDF

    s3h-02

    Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
    Text: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ


    OCR Scan     		S1K20H 100ns S1K40 300ns S2K20 S2K20H S2K40 s3h-02 S52A s3vc0 S2V20 S2LA20 s19j S1K40 PDF

    laser diode 905nm

    Abstract: E1311 narrow pulse width circuit LIDAR trigger module perkin hybrid HV modules 225nm hv circuit 1FW transistor perkin
    Text: 02/02 '00 10:18 FAX PerkinElmer -» PACER ^^ 1 -P e r k ò m i S 1o i l¿]002 Preliminary Data Sheet (01- 2 &-99 MGAD Series Hybrid Pulsed Laser Module Features: • ■ ■ ■ Integral Hybrid Driver Design Narrow Pulse Widths: 3ns, 7ns Output Power Options


    OCR Scan     		850nm 905nm 1550nm mils/75 6mi1s/150nm 9rnils/225nm 12tnils/300pm laser diode 905nm E1311 narrow pulse width circuit LIDAR trigger module perkin hybrid HV modules 225nm hv circuit 1FW transistor perkin PDF

    NJU6004

    Abstract: KY14 KY252
    Text: o o o o *0 X X 5 H H 2 > r> H m W H n w z m M O x x > |H < o o o o t i 5 ni m » «o • » - o H ^ » n nn nnnn nnnn < £> 00 «J 0> uuu uuuu uuuu W I í D »v W > *> . ^ » WW MW ^ Wo 0C 2 o • V , □ V)11 • • • O • • S5 i i l 3K o m » V


    OCR Scan     		NJU6004 NJU6004 NJU6004G NJU6004V NJU6004L 20/SSOP 20/SDIP KY14 KY252 PDF

    74AS882

    Abstract: No abstract text available
    Text: SN54AS882A, SN74AS882A 32 BIT LOOK AHEAD CARRY GENERATORS D 2 6 6 1 , DECEMBER 1 9 8 2 REVISED NOVEMBER 1985 SN 54A S882A . J T P A C KA G E S N 7 4 A S 8 8 2 A . . DW OR NT P A C K A G E Directly Compatible with 'A S 1 8 1 B , 'A S 1 1 8 1 , 'A S 8 8 1 B , and A S 1 8 8 1 A LU s


    OCR Scan     		SN54AS882A, SN74AS882A 300-m S882A 32-bit 74AS882 PDF