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    FETS FIELD EFFECT TRANSISTORS Search Results

    FETS FIELD EFFECT TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FETS FIELD EFFECT TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    AN7332

    Abstract: thyristor family Ignition Transformer automotive thyristor intersil ignition mosfet structure
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement


    Original     		PDF

    mosfet to ignition coil

    Abstract: scr speed control dc motor thyristor drive dc motor speed control AN7332 CR8 thyristor equivalent thyristor motor speed control circuit thyristor family scr driver dc motor speed control mosfet structure Ignition Transformer
    Text: Harris Semiconductor No. AN7332.1 Harris Power MOSFETs May 1992 The Application Of Conductivity-Modulated Field-Effect Transistors Author: Jack Wojslawowicz Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer


    Original     		AN7332 ED-31 CR17-20 CR9-12 mosfet to ignition coil scr speed control dc motor thyristor drive dc motor speed control CR8 thyristor equivalent thyristor motor speed control circuit thyristor family scr driver dc motor speed control mosfet structure Ignition Transformer PDF

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet PDF

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor PDF

    mosfet to ignition coil

    Abstract: 12v DC motor speed control using scr AN-7503 Ignition Transformer dc motor speed control using scr driver ge motors ac 110v DC motor speed control circuit with SCR thyristor family speed control of dc motor using scr
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary bt he pliion nctivodued ldect antors utho eyrds terrpoon, minctor, er ) OCI O frk ge- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer


    Original     		PDF

    mosfet 7503

    Abstract: mosfet to ignition coil AN-7503 Ignition Transformer AN75 output characteristic of SCR GTO
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary Cretor DOCI FO dfark Page- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Gallium Arsenide Field Effect Transistors Characteristics The Gallium Arsenide field effect transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide. This


    Original     		noiseTF-34xxx: ATF-36xxx: ATF-44xxx: ATF-45xxx: ATF-46xxx: PDF

    fet ft 20 GHZ

    Abstract: transistor atf ATF-36xxx high power FET transistor s-parameters
    Text: Gallium Arsenide␣ Field Effect Transistors Characteristics The Gallium Arsenide field effect transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide. This


    Original     		ATF-45xxx: ATF-21xxx: ATF-25xx: ATF-44xxx: ATF-46xxx: fet ft 20 GHZ transistor atf ATF-36xxx high power FET transistor s-parameters PDF

    PMBF4391

    Abstract: PMBF4392 PMBF4393 MBK288
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect


    Original     		PMBF4391; PMBF4392; PMBF4393 MAM385 R77/02/9 PMBF4391 PMBF4392 PMBF4393 MBK288 PDF

    BSR57

    Abstract: BSR56
    Text: BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors FETs in a plastic microminiature envelope designed for application in thick and thin-film circuits. The


    Original     		BSR56; BSR57; BSR58 BSR56 BSR57 BSR56 PDF

    Untitled

    Abstract: No abstract text available
    Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs


    OCR Scan     		PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    2N5640 MOTOROLA

    Abstract: Motorola 2n4393 2N4393 motorola 2N4092 2N4352 2N4352 FET 2N4391 MOTOROLA 2N5639 MOTOROLA 2N5640 MPF970
    Text: Transistors Field effect transistors M otorola offers a line o f field -effect transistors th at encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety o f junction FETs and M O S FE T s, w ith N- or P-channel polarity w ith both single and dual gates. These FETs include devices developed fo r operation


    OCR Scan     		2N3993 2N3994 2N4091 2N4092 2N4093 2N4351 2N4352 2N4391 2N4392 2N4393 2N5640 MOTOROLA Motorola 2n4393 2N4393 motorola 2N4092 2N4352 2N4352 FET 2N4391 MOTOROLA 2N5639 MOTOROLA 2N5640 MPF970 PDF

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 2N4091 2N4856 MPF971
    Text: Motorola offers a line of field-effect transistors that encom­ passes the latest technology and covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs with P- or N-channel polarity with both single and dual gates and TMOS FETs. These FETs include devices de­


    OCR Scan     		MPF971 N3993 N3994 2N4859A 2N4856A 2N4856 N4859 2N4391 MPF4391 2N4091 P-Channel Depletion Mode FET P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 PDF

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376 PDF

    MTM5P25

    Abstract: mtp5p25
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM5P25 MTP5P25 Advance Information Power Field Effect Transistors P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 5 AMPERES rDS on = 3 OHMS 250 VOLTS These TM O S P ow er FETs are designed fo r m e diu m volta g e ,


    OCR Scan     		MTM5P25 MTP5P25 MTM/MTP5P25 mtp5p25 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF410A to D _ J V_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications up to the VHF range. These FETs can be supplied in fou r I q s S groups. Special features are the low feedback capacitance and


    OCR Scan     		BF410A BF410 BF410B; BF410C BF410D; PDF

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 PDF

    PN4391

    Abstract: PN4392 IEC134 PN4393 Vgsoff
    Text: PN4391 to 4393 J V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA


    OCR Scan     		PN4391 PN4392 PN4393 bb53131 0035A3b IEC134 PN4393 Vgsoff PDF

    BF410

    Abstract: BF410C BF410A BF410B BF410D
    Text: 711002b G D b 7 M ö cJ 773 IPHIN BF410A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic T O -9 2 variant; intended fo r applications up to the V H F range. These FETs can be supplied in fou r lo s s groups. Special features are the low feedback capacitance and


    OCR Scan     		711002b BF410A BF410 BF410C BF410B BF410D PDF

    Untitled

    Abstract: No abstract text available
    Text: PN4391 to 4393 yv N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA Drain-source voltage


    OCR Scan     		PN4391 PN4391 PN4392 PN4393 PDF