Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode Preliminary data Philips Semiconductors 2002 Sep 09 Philips Semiconductors Preliminary data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode FEATURES CBTS3253
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CBTS3253
CBTS3253
JESD22-A114,
JESD22-A115
JESD22-C101
JESD78
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CBTS3253PW
Abstract: JESD22-A114 JESD22-A115 JESD78 CBTS3253 CBTS3253D CBTS3253DB CBTS3253DS CS3253 2b3 diode
Text: INTEGRATED CIRCUITS CBTS3253 Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping Product data Philips Semiconductors 2002 Nov 06 Philips Semiconductors Product data Dual 1-of-4 FET multiplexer/demultiplexer with Schottky diode clamping FEATURES
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CBTS3253
JESD22-A114,
JESD22-A115
JESD22-C101
CBTS3253PW
JESD22-A114
JESD78
CBTS3253
CBTS3253D
CBTS3253DB
CBTS3253DS
CS3253
2b3 diode
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS6U24
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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SC-95
Abstract: PA507TE-T1-A
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm The μ PA507TE is a switching device, which can be driven directly 0.32 +0.1 –0.05 0.65 –0.15 DESCRIPTION +0.1
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PA507TE
PA507TE
SC-95
PA507TE-T1-A
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Untitled
Abstract: No abstract text available
Text: QS6U24 QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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DUAL FET
Abstract: schottky diode
Text: Contents SN74CBTD3306 SN74CBTS3306 CBT With Integrated Diodes 5–2 Page Dual FET Bus Switch With Level Shifting . . . . . . . . . . . 5–3 Dual FET Bus Switch With Schottky Diode Clamping . . . . . . . . . . . . . . . . . . . . 5–7 SN54CBTD3384 SN74CBTD3384
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SN74CBTD3306
SN74CBTS3306
SN54CBTD3384
SN74CBTD3384
SN74CBTS3384
SN74CBTD3861
SN74CBTD16210
SN74CBTD16211
SN74CBTS16211
SN74CBTS16212
DUAL FET
schottky diode
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Untitled
Abstract: No abstract text available
Text: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 Features 1) The QS6U22 combines Pch MOS FET with a Schottky
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QS6U22
QS6U22
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QS5U28
Abstract: No abstract text available
Text: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.
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QS5U28
QS5U28
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QS6U22
Abstract: EXPORT U22
Text: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky
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QS6U22
QS6U22
EXPORT U22
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Untitled
Abstract: No abstract text available
Text: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.
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QS5U28
QS5U28
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Untitled
Abstract: No abstract text available
Text: QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (2) (1) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky
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QS6U22
QS6U22
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Untitled
Abstract: No abstract text available
Text: QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package.
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QS5U28
QS5U28
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QS5U26
Abstract: No abstract text available
Text: QS5U26 Transistor 2.5V Drive Pch+SBD MOS FET QS5U26 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U26 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package.
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QS5U26
QS5U26
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Untitled
Abstract: No abstract text available
Text: QS6U22 QS6U22 Transistors 2.5V Drive Pch+SBD MOS FET QS6U22 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.85 0.7 (4) 1.6 2.8 (1) (2) 0~0.1 0.3~0.6 zFeatures 1) The QS6U22 combines Pch MOS FET with a Schottky
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QS6U22
QS6U22
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Untitled
Abstract: No abstract text available
Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 Features 1) The QS5U27 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package.
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QS5U27
QS5U27
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SC-95
Abstract: No abstract text available
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven
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PA508TE
PA508TE
SC-95
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SC-95
Abstract: No abstract text available
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven
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PA507TE
PA507TE
SC-95
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hz nec
Abstract: SC-95 UPA507TE
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven
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PA507TE
PA507TE
hz nec
SC-95
UPA507TE
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fet with schottky diode
Abstract: SC-95
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA508TE is a switching device, which can be driven
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PA508TE
PA508TE
fet with schottky diode
SC-95
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SC-95
Abstract: upa1980
Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA1980 P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µ PA1980 is a switching device, which can be driven
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PA1980
PA1980
SC-95
upa1980
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FL6L5203
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5203 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Overview Package FL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small
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2002/95/EC)
FL6L5203
FL6L5203
FL6L52030L
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FM6L5202
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FM6L5202 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FM6L5202 is N-channel type MOS FET with Schottky Brrier Diode in small
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2002/95/EC)
FM6L5202
FM6L5202
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