GL521
Abstract: E431 FET fet K 727 213H 371H 431H 4523 523C 2EN36 192-H
Text: xqun|y ounyy zw ounyy oxwyy xqrqxqvoq s{tpq CJIBA< CA:221 >DD H< CA:222 N@G@?SI@ IOJP< C].B 523 HM 543 CA:224 H<? 523? CA:225 ELQ.321H ELQ.321H ELQ.322H ELQ.322H 4523 D HM 225 CAQ ELQ.331H D 3F FET>.41H CA:422 CA:423 9:2 523C CA:223 CA:421 D H< 8:3 CAQ6<0CA>6<
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134HN
DMJ0NM27
DMJ25112-
M29112-
2EN36
M3210
3EN26
GM321
GM436
GL521
GL521
E431 FET
fet K 727
213H
371H
431H
4523
523C
192-H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0911A n iv n a b v L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 1 1 A , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. U n it: m illim eters FEATURES • •
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MGF0911A
GF-21
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FT6120D
Abstract: FT6120
Text: January 1990 Edition 1.1 F u jf r s u PRODUCT PROFILE'. FT6120, FT6120D Power MOS FET Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T ABSOLUTE M AXIM UM RATINGS Rating Ta = 25°C S ym b o l C ondition U nit Value D rain Source Voltage V o ss
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FT6120,
FT6120D
FT6120D
FT6120
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PDF
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i678
Abstract: No abstract text available
Text: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in
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TGF4250-SCC,
TGF4250-SCC
TGF4250-SCC
MS/402
i678
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PDF
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2SK1904
Abstract: No abstract text available
Text: Ordering n u m b e r:EN42 1 1 _ 2SK1904 No.4211 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - M icaless package facilitating m ounting.
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EN4211
2SK1904
10//s,
2SK1904
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1NA110
Abstract: Instrumentation Amplifiers notes
Text: B U R R -B R O W N « A V A IL A B L E IN DIE FORM El Fast-Settling FET-lnput Very High Accuracy INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS • L O W B IA S C U R R E N T : 5 0 p A . m ax • Fa s t sc an n in g rate m u ltip le xe d in p u t data acquisition
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INA110
INA110
I000V
1/10k
1NA110
Instrumentation Amplifiers notes
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs Integrated Circuit FEATURES UPG153TB u p q is s j b DESCRIPTION_ The UPG153TB and UPG155TB are L-band SPDT Single Pole Double Throw GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from
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UPG153TB)
UPG155TB)
UPG153TB
UPG153TB
UPG155TB
OT363.
UPG155TB
UPG153TB,
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs FET Amplifiers, 2.7-3.1 GHz MLA 2543/2643 Series UNCOMPENSATED SPECIFICATIONS Frequency Range GHz Output Power at ldB Gain Comp (dBm) Min. +12 +18 2.7 - 3.1 +21 +26 +29 (g u aran teed @ +25“C) Gain (dB) Min. Gain Flatness (dB) Max. Gain Variation
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PDF
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Untitled
Abstract: No abstract text available
Text: BURR — BROUN CORP HE D |l?313t.S □013ciS3 0 I T - 7 B U R R -B R O W N IM M I I ' 0 1 ~~ INA110 I AVAILABLE IN DIE FORM < z Fast-Settling FET-lnput Very High Accuracy INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS • L O W B IA S C U R R E N T : 5 0p A, max
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INA110
1/10k
15VDC
-15VDC
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PDF
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N OPA541 High Power Monolithic OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • • • • • POWER SUPPLIES TO ±40V OUTPUT CURRENT TO 10A PEAK PROGRAMMABLE CURRENT LIMIT INDUSTRY-STANDARD PINOUT FET INPUT TO-3 AND LOW-COST POWER PLASTIC PACKAGES
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OPA541
OPA541
16-Bit
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PDF
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gs 069 0605
Abstract: 4210M 8016 nec 5501 gm
Text: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim
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NE4210M01
NE4210M01
24-Hour
gs 069 0605
4210M
8016 nec
5501 gm
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PDF
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pin diagram of ic 74245
Abstract: No abstract text available
Text: 1 QuickSwitch Products QS3245 High-Speed CMOS QS32245 Q u iC k S w itC ll® &CONDUCTOR.INC. 8-Bit Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • bidirectional switches connect inputs to outputs • P i n compatible with the 74F245, 74FCT245,
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QS3245
QS32245
74F245,
74FCT245,
74FCT245T
QS32245
QS3245
74FCT245
74F245
pin diagram of ic 74245
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PDF
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vqb 71
Abstract: 074I sem 304 SD50G1
Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package
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SD5000CHP
SD5000J
SD500QN
SD5000,
SD5001,
SD5002
SD50CHCHP
SD5001J
SD5002CH«
SD5Q02M
vqb 71
074I
sem 304
SD50G1
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PDF
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dual high side MOSFET driver with charge pump
Abstract: high side MOSFET driver with charge pump charge pump mosfet driver external MAX620CPN "high side MOSFET Drivers" High power led driver MAX620 MAX620CWN MAX620EPN MAX620EWN
Text: 19-4325; RevO; 7/91 , Q u a d H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability. This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a
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MAX620/MAX621
IRFZ40
MAX620
dual high side MOSFET driver with charge pump
high side MOSFET driver with charge pump
charge pump mosfet driver external
MAX620CPN
"high side MOSFET Drivers"
High power led driver
MAX620CWN
MAX620EPN
MAX620EWN
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PDF
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D1651
Abstract: d1047 c3987 B817 c2078 D1650 d1402 D1649 B1273 d1878
Text: MOS FET : VDSS, I D C o n t i n u e d on n e x t p a g e T O - 2 2 0 . F I ( L S , t y p e ) 50 60 75 80 D1394* A1258* B507 B1273 B1346 C3144* D313 D1912 D2027 C2078 C4547* 3 3. 5 4 4. 5 B824 D1060 D1395* 5 5. 5 6 8 9 10 12 15 150 200 250 J 282 B884* D1194 *
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D1394*
A1258*
B1273
B1346
C3144*
D1912
D2027
A1259*
A1289
C3145
D1651
d1047
c3987
B817
c2078
D1650
d1402
D1649
d1878
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PDF
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FBA50AA50
Abstract: FCA50aa50 FCA50AB50 SF200AA10 SF150AA20 359RGA 10.7Mhz 15Khz crystal filter FBA50AA45 FBA75AA50 SF10
Text: 194 - I - v 'I o s N F E T S lfB / MOS ° MOS ° m m ° ? ' -* -< IV-? • < * -¥ tt » U L I S & g : No. E 7 6 1 0 2 (M) FET l< S / 2 S l* a S 2101*501 I 0(3>vw-l )V —(T]S S a i. fi m z V dss Voss m * D < a i) d (A ) (W ) T . Tch V ,. (& 3 ) (°C)
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H-101
FBA50AA50
FCA50aa50
FCA50AB50
SF200AA10
SF150AA20
359RGA
10.7Mhz 15Khz crystal filter
FBA50AA45
FBA75AA50
SF10
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRI S Hü S E M I C O N D U C T O R HbE D • 4 3 G 2 2 b tì G 0 0 0 Z 1 7 b ■ T -3 1 -3 -S H M F-06310 g0 H A R R IS Gain Optimized Low Current GaAs FET 2-12 G H z PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids
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43G22bt
G000Z17
F-06310
HMF-06310
HMF06300.
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M FT3055V TM O S V S O T -2 2 3 fo r S u rfa c e M ount TM O S V N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.7 AMPERES 60 VOLTS R DS on = 0.130 OHM 'Iu l P ™ T M O S V is a new te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is tance a rea p rod u ct about o n e -h a lf th a t of sta n d a rd M O SFETs. This
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Untitled
Abstract: No abstract text available
Text: POWER PA83 • PA83A A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • T U C SO N , A R IZ O N A • A P P L IC A T IO N S H O T L IN E 8 0 0 4 2 1 - 1 8 6 5 FEATURES • • • • • LOW BIAS CURRENT, LOW NOISE — FET Input PROTECTED OUTPUT — Thermal Shutoff
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PA83A
BB3583AM/JM
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PDF
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6N100E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Voltage Regulators AN8032 Active-Filter Control 1C • Overview W h e n the p ow er is supplied from the com m ercial power supply to the electrical equipment, the harmonic distortion generating in the power line may give obstruc tion to the power facilities or other electrical equipments.
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AN8032
20ms/div)
200mA
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PDF
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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PDF
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Untitled
Abstract: No abstract text available
Text: I— I P E Xe POWER OPERATIONAL AMPLIFIERS PA08 • PA08A APEX MICROTECHNOLOGY CORPORATION « TUCSON, ARIZONA « APPLICATIONS HOTLINE 8 0 0 421-18651 FEATURES • • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ± 150mA
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PA08A
150mA
130mA
200mA
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