FET TRANSISTOR FT Search Results

2SK3266

Abstract: 2SC4639 FC22
Contextual Info: FC22 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Applications TENTATIVE Features • Composite type with an J-FET transistor and a PNP transistor contained in the conventional CP package, improving the

VEC2901

Contextual Info: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.

T2406

Abstract: t2406 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET M SOT-223 for Surface Mount M ED IU M POW ER TM O S FET 700 mA 240 VOLTS T his TM O S m edium pow er field effect transistor is designed for

ENN8366

Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Contextual Info: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

t2406 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TM OS FET 700 mA 240 VOLTS This TM OS medium power field effect transistor is designed for

marking 1a

Abstract: CPH5901 2SC4639 2SK932 82786
Contextual Info: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

Contextual Info: CPH5901 Ordering number : ENN8278 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

TA3705

Contextual Info: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

UPA509TA

Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Contextual Info: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor

Contextual Info: CPH5902 Ordering number : EN6962C SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

Contextual Info: CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

2SK458

Abstract: 2SK45
Contextual Info: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C

Contextual Info: CPH5905 Ordering number : EN7177B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

transistor k 4212 fet

Abstract: S211S NE23383B
Contextual Info: PRELIMINARY DATA SHEET_ \ | F f ~ / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Hereto Junction FET that utilizes the {Unit : mm

transistor te 2305

Abstract: SOT223 Package
Contextual Info: MOTOROLA Order this document by MTB40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTB40N10E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high

NE334501

Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

t2406 MOTOROLA

Contextual Info: f MOTOROLA Order this document by MMFT2406T1/D SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TMOS FET 700 mA

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

10VR

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy

a1034

Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

mosfet L 3055 motorola

Abstract: FT3055E sot-223 body marking D K Q F
Contextual Info: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed

2SJ202

Abstract: 2SK1580 T100 T200
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING The 2SJ202 is an P-channel vertical type MOS FET w hich can be OUTLINE DIMENSIONS Unit : mm driven by 2.5 V power supply. 2.1 ± 0.1 As the MOS FET is driven by low voltage and does n o t require con­