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    FET S6 Search Results

    FET S6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation
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    FET S6 Price and Stock

    Ohmite Mfg Co RW0S6BB10R0FET

    Wirewound Resistors - SMD .6watt 10 ohm 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RW0S6BB10R0FET 4,331
    • 1 $1.52
    • 10 $1.18
    • 100 $0.647
    • 1000 $0.601
    • 10000 $0.601
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    Ohmite Mfg Co RW0S6BBR100FET

    Wirewound Resistors - SMD .6watt .1 ohm 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RW0S6BBR100FET 4,076
    • 1 $1.52
    • 10 $1.35
    • 100 $0.776
    • 1000 $0.626
    • 10000 $0.625
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    Ohmite Mfg Co RW0S6BBR020FET

    Wirewound Resistors - SMD .6watt .02 ohm 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RW0S6BBR020FET 2,328
    • 1 $1.52
    • 10 $1.35
    • 100 $0.934
    • 1000 $0.637
    • 10000 $0.617
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    Ohmite Mfg Co RW0S6BB1R00FET

    Wirewound Resistors - SMD .6watt 1 ohm 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RW0S6BB1R00FET 1,720
    • 1 $1.51
    • 10 $1.34
    • 100 $1.02
    • 1000 $0.636
    • 10000 $0.617
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    Ohmite Mfg Co RW0S6BB5R00FET

    Wirewound Resistors - SMD .6watt 5 ohm 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RW0S6BB5R00FET 595
    • 1 $2.02
    • 10 $1.42
    • 100 $0.896
    • 1000 $0.625
    • 10000 $0.601
    		Buy Now
    Find more FET S6 price and stock on Findchips.com

    FET S6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC261402FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620


    Original     		PTFC261402FC PTFC261402FC 140-watt H-37248-4 PDF

    RO6006

    Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
    Text: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original     		PTVA101K02EV PTVA101K02EV H-36275-4 RO6006 TRANSISTOR c105 capacitor 6800 uf r812 R809 011022 1030-1090MHz SK101M100ST PDF

    Untitled

    Abstract: No abstract text available
    Text: FET Input Analog Front End with ADC Driver ADA4350 Data Sheet FEATURES GENERAL DESCRIPTION Low noise, low input bias current FET input amplifier Very low input bias current: ±0.25 pA typical at 25°C Low input voltage noise 92 nV/√Hz typical at 10 Hz at 5 V


    Original     		ADA4350 typical/65 MO-153-AE 28-Lead RU-28) ADA4350ARUZ ADA4350ARUZ-R7 EVAL-ADA4350RUZ-P PDF

    FET Transistor Guide

    Abstract: boot loader code serial port msp430 2x7 segment led display 10 pin MSP430 pin diagram MHB14K-ND 2x7 lcd display 9 pin to 25-pin d-sub msp wiring MSP430F13xIPM MSP-TS430PM64 MSP430F1232IDW BSL .ZIP
    Text: Texas Instruments MSP-FET430 Flash Emulation Tool FET User’s Guide Introduction Thank you for purchasing a Texas Instruments MSP-FET430 Flash Emulation Tool (FET) for our MSP430 ultralow power microcontroller. Please read and follow the Get Started Now! section below. This section will enable you to inventory your


    Original     		MSP-FET430 MSP430 MSP430 FET Transistor Guide boot loader code serial port msp430 2x7 segment led display 10 pin MSP430 pin diagram MHB14K-ND 2x7 lcd display 9 pin to 25-pin d-sub msp wiring MSP430F13xIPM MSP-TS430PM64 MSP430F1232IDW BSL .ZIP PDF

    SMD CODE MARKING s7 SOT23

    Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
    Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		applicat174 PMBFJ175 PMBFJ176 PMBFJ177 OT-23 OT-89 OT-143 OT-223 OT-23 SMD CODE MARKING s7 SOT23 PMBFJ111 PMBFJ174 BSR56 BFT46 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET


    OCR Scan     		PHN70308 PHN70308 OT341-1 SSOP28) 135002/00/01/pp5 PDF

    2SK1658

    Abstract: TC236
    Text: MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable fo r


    OCR Scan     		2SK1658 2SK1658 IEI-1209) TC236 PDF

    m8p smd

    Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
    Text: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci­ tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own


    OCR Scan     		OT-23 OT-89 OT-143 OT-223 OT-223 OT-69 m8p smd sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23 PDF

    2SK1583

    Abstract: IEI-1213 MEI-1202 TC-2297B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1583 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		2SK1583 IEI-1213 MEI-1202 TC-2297B PDF

    Untitled

    Abstract: No abstract text available
    Text: IN T E G R A T E D C IR C U IT S UC1714/5 UC2714/5 UC3714/5 UNITRODE Complementary Switch FET Drivers FEATURES • Single Input PWM and TTL Compatible • Auxiliary Output FET Driver, 0.5A Source/1 A Sink • High Current Power FET Driver, 1,0A Source/2A


    OCR Scan     		UC1714/5 UC2714/5 UC3714/5 500ns UDG-9401 UC1714 0D14A2S PDF

    sot-23 Marking M6

    Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
    Text: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		BSP121 BSP126 BSP205 BSP206 BSP220 BSP225 BSR56 BSR57 BSR58 BSS83 sot-23 Marking M6 FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel PDF

    MGF1601

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S ch o ttk y gate, is designed fo r use in S to X band am plifiers and oscillators. Th e herm etically sealed m etalceram ic package assures m inim um parasitic losses, and


    OCR Scan     		GF1601B MGF1601 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1819-01MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET _ ^ - F-V SERIES • Features Outline Drawings • Include fast recovery diode • High voltage • l ow driving power • Avalanche-proof ■ Applications • f /lotor controllers


    OCR Scan     		2SK1819-01MR PDF

    transistor 431A

    Abstract: transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a
    Text: DATA SHEET PHN70308 7 N-channel 30/80 mi FET array O bjective specification File under Discrete sem iconductors, SC13b Philips Semiconductors 1998 Aug 14 PHILIPS Objective specification Philips Sem iconductors 7 N-channel 30/80 mQ FET array FEATURES • •


    OCR Scan     		PHN70308 SC13b OT341-1 SSOP28 transistor 431A transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a PDF

    2sk955

    Abstract: FLT5 2SK955 equivalent 8005i 5UTA
    Text: 2SK955 " FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES •I Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS • DC-DC converters


    OCR Scan     		2SK955 2sk955 FLT5 2SK955 equivalent 8005i 5UTA PDF

    CDB 450

    Abstract: No abstract text available
    Text: designed for . 3 Siliconix G il5 Monolithic 6-Channel Enhancement-Type MOS FET Switch BENEFITS Reduces External Component Requirements • Switching Analog Signals o Internal Zener Diode Protects the Gate o Six Switches Per Chip o Integrated MOS FET fo r Each Gate to


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK957-MR FUJI PO W ER M O S-FET N CHANNEL SILICON POWER MOS-FET F -II SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • '/gss= ± 30V Guarantee ■ Applications


    OCR Scan     		2SK957-MR EHTS30 PDF

    diode S467

    Abstract: No abstract text available
    Text: 2SK906 F U JI POWER M O S-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES • Features ■Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power ■Applications • DC-DC converters • Motor controlers • General purpose power amplifier


    OCR Scan     		2SK906 455-S467 diode S467 PDF

    2SK1658

    Abstract: TC236
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be


    OCR Scan     		2SK1658 2SK1658 TC236 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2251-01 F U JI POW ER M O S-FET N-CHAIMNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V S= ± 3 0 V Guarantee • Avalanche-proof


    OCR Scan     		2SK2251-01 20Kfi) 53B8-76B0 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC-DC converters • General purpose power amplifier


    OCR Scan     		2SK947-MR 53e8-7 PDF

    FS5I

    Abstract: No abstract text available
    Text: 2SK951-MR FUJI POWER MOS-FET n -: hannel silico n p o w e r m o s -fet F -II SERIES Outline Drawings • Features • High speed switching • l ow on-resistance • No secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee


    OCR Scan     		2SK951-MR FS5I PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 S K 1 1 6 - F U JI P O W E R M O S-FET 1 N-CHANNEL SILICON POWER MOS-FET F-II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed for use in 5 . 9 — 6 . 4 20.4 ± 0 . 2 0 .8 0 3 ± 0 . 0 0 8


    OCR Scan     		27C102P, RV-15 PDF